FR2450504B1 - - Google Patents
Info
- Publication number
- FR2450504B1 FR2450504B1 FR8002672A FR8002672A FR2450504B1 FR 2450504 B1 FR2450504 B1 FR 2450504B1 FR 8002672 A FR8002672 A FR 8002672A FR 8002672 A FR8002672 A FR 8002672A FR 2450504 B1 FR2450504 B1 FR 2450504B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT20551/79A IT1202895B (it) | 1979-02-27 | 1979-02-27 | Dispositivo di protezione termica per un componente elettronico a semiconduttore |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2450504A1 FR2450504A1 (fr) | 1980-09-26 |
FR2450504B1 true FR2450504B1 (US06299757-20011009-C00006.png) | 1983-12-09 |
Family
ID=11168651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8002672A Granted FR2450504A1 (fr) | 1979-02-27 | 1980-02-07 | Dispositif de protection thermique pour un composant electronique a semi-conducteur |
Country Status (7)
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3415764A1 (de) * | 1984-04-27 | 1985-10-31 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zur temperaturueberwachung integrierter schaltungen |
US4555742A (en) * | 1984-05-09 | 1985-11-26 | Motorola, Inc. | Short detection circuit and method for an electrical load |
US4628397A (en) | 1984-06-04 | 1986-12-09 | General Electric Co. | Protected input/output circuitry for a programmable controller |
IT1214806B (it) * | 1984-09-21 | 1990-01-18 | Ates Componenti Elettron | Dispositivo integrato monolitico di potenza e semiconduttore |
GB2182460B (en) * | 1985-10-30 | 1989-10-11 | Rolls Royce | Failsafe electronic control system |
JPH0693485B2 (ja) * | 1985-11-29 | 1994-11-16 | 日本電装株式会社 | 半導体装置 |
US4667265A (en) * | 1985-12-20 | 1987-05-19 | National Semiconductor Corporation | Adaptive thermal shutdown circuit |
JPH0834222B2 (ja) * | 1987-03-19 | 1996-03-29 | 日本電装株式会社 | 半導体装置 |
JP2522208B2 (ja) * | 1987-03-19 | 1996-08-07 | 日本電装株式会社 | 半導体装置 |
JP2521783B2 (ja) * | 1987-09-28 | 1996-08-07 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
DE3844958C2 (de) * | 1987-09-28 | 1999-04-22 | Mitsubishi Electric Corp | Integrierte Halbleiteranordnung mit Überlastschutz |
FR2627027A1 (fr) * | 1988-02-04 | 1989-08-11 | Sgs Thomson Microelectronics | Detecteur de surcharge thermique dans un circuit integre |
DE58900553D1 (de) * | 1988-05-11 | 1992-01-23 | Siemens Ag | Schaltungsanordnung zum erfassen der uebertemperatur eines halbleiterbauelements. |
JP2519304B2 (ja) * | 1988-09-02 | 1996-07-31 | 株式会社日立製作所 | 半導体装置及びその回路 |
JP2771574B2 (ja) * | 1989-02-09 | 1998-07-02 | 日産自動車株式会社 | 半導体装置 |
EP0393224B1 (de) * | 1989-04-20 | 1994-02-16 | Siemens Aktiengesellschaft | Schaltungsanordnung zur Temperaturüberwachung von in einem Halbleiterschaltkreis integrierten Leistungsschalttransistoren |
EP0428813B1 (en) * | 1989-11-17 | 1995-02-01 | STMicroelectronics S.r.l. | Nevice for protection against the short circuit of a MOS-type power device, with a preset dependance on the temperature at which the power device operates |
GB9016668D0 (en) * | 1990-07-30 | 1990-09-12 | Nad Electronics Ltd | Power amplifier protection circuit |
DE4122653C2 (de) * | 1991-07-09 | 1996-04-11 | Daimler Benz Ag | Steuerbare Halbleiterschalteinrichtung mit integrierter Strombegrenzung und Übertemperaturabschaltung |
US5383083A (en) * | 1992-05-19 | 1995-01-17 | Pioneer Electronic Corporation | Protective apparatus for power transistor |
US5461252A (en) * | 1992-10-06 | 1995-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers |
EP0788656B1 (de) * | 1994-10-28 | 2000-08-16 | Siemens Aktiengesellschaft | Festkörperschaltelement mit zwei source-elektroden und festkörperschalter mit einem solchen element |
US5694282A (en) * | 1996-03-04 | 1997-12-02 | Ford Motor Company | Short circuit protection system |
JPH10116917A (ja) * | 1996-10-14 | 1998-05-06 | Sharp Corp | パワートランジスタ |
US5757601A (en) * | 1997-01-21 | 1998-05-26 | Ford Motor Company | Short circuit protection for high side driver |
DE19702687C1 (de) | 1997-01-25 | 1998-08-06 | Bosch Gmbh Robert | Anordnung zum Schutz gegen Übertemperatur eines Steuergeräts für Gasentladungslampen |
DE19742930C1 (de) * | 1997-09-29 | 1998-11-19 | Siemens Ag | Leistungsschalter mit Überlastschutz |
US6055149A (en) * | 1998-12-02 | 2000-04-25 | Intersil Corporation | Current limited, thermally protected, power device |
US6388496B1 (en) * | 1999-04-15 | 2002-05-14 | Kabushiki Kaisha Toshiba | Semiconductor output circuit |
JP3558959B2 (ja) * | 2000-05-25 | 2004-08-25 | シャープ株式会社 | 温度検出回路およびそれを用いる液晶駆動装置 |
JP3688619B2 (ja) * | 2001-10-05 | 2005-08-31 | 株式会社東芝 | 半導体集積回路 |
US7253689B2 (en) * | 2004-06-08 | 2007-08-07 | Telasic Communications, Inc. | Low distortion amplifier |
JP7528802B2 (ja) * | 2021-02-01 | 2024-08-06 | 富士電機株式会社 | 半導体装置及び温度測定方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3308271A (en) * | 1964-06-08 | 1967-03-07 | Fairchild Camera Instr Co | Constant temperature environment for semiconductor circuit elements |
US3617859A (en) * | 1970-03-23 | 1971-11-02 | Nat Semiconductor Corp | Electrical regulator apparatus including a zero temperature coefficient voltage reference circuit |
JPS5272183A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Semiconductor device with protecting device |
JPS582607B2 (ja) * | 1976-03-12 | 1983-01-18 | パイオニア株式会社 | 温度検知回路 |
DE2644597C2 (de) * | 1976-10-02 | 1984-08-30 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Temperaturfühler in einer integrierten Halbleiterschaltung |
DE2705583C2 (de) * | 1977-02-10 | 1982-04-08 | Siemens AG, 1000 Berlin und 8000 München | Transistorschaltung mit einem vor thermischer Zerstörung zu schützenden Transistor |
US4146903A (en) * | 1977-09-16 | 1979-03-27 | National Semiconductor Corporation | System for limiting power dissipation in a power transistor to less than a destructive level |
-
1979
- 1979-02-27 IT IT20551/79A patent/IT1202895B/it active
-
1980
- 1980-01-22 SE SE8000502A patent/SE454926B/sv not_active IP Right Cessation
- 1980-02-04 GB GB8003665A patent/GB2047956B/en not_active Expired
- 1980-02-07 FR FR8002672A patent/FR2450504A1/fr active Granted
- 1980-02-25 US US06/124,624 patent/US4355344A/en not_active Expired - Lifetime
- 1980-02-27 JP JP2288880A patent/JPS55117267A/ja active Granted
- 1980-02-27 DE DE19803007403 patent/DE3007403A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
IT7920551A0 (it) | 1979-02-27 |
FR2450504A1 (fr) | 1980-09-26 |
SE8000502L (sv) | 1980-08-28 |
GB2047956B (en) | 1983-05-18 |
JPS55117267A (en) | 1980-09-09 |
DE3007403A1 (de) | 1980-09-04 |
US4355344A (en) | 1982-10-19 |
IT1202895B (it) | 1989-02-15 |
SE454926B (sv) | 1988-06-06 |
DE3007403C2 (US06299757-20011009-C00006.png) | 1989-08-17 |
JPS625345B2 (US06299757-20011009-C00006.png) | 1987-02-04 |
GB2047956A (en) | 1980-12-03 |