FR2438916A1 - Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection - Google Patents

Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection

Info

Publication number
FR2438916A1
FR2438916A1 FR7925103A FR7925103A FR2438916A1 FR 2438916 A1 FR2438916 A1 FR 2438916A1 FR 7925103 A FR7925103 A FR 7925103A FR 7925103 A FR7925103 A FR 7925103A FR 2438916 A1 FR2438916 A1 FR 2438916A1
Authority
FR
France
Prior art keywords
rings
semiconductor component
region
protective rings
planar junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7925103A
Other languages
English (en)
Other versions
FR2438916B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2438916A1 publication Critical patent/FR2438916A1/fr
Application granted granted Critical
Publication of FR2438916B1 publication Critical patent/FR2438916B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

COMPOSANT A SEMI-CONDUCTEURS DONT LA TENSION INVERSE DES JONCTIONS PLANAIRES P-N 4 PEUT ATTEINDRE DES VALEURS SUPERIEURES A 2 KV PAR UTILISATION D'ANNEAUX 5 DITS DE PROTECTION. UNE REGION 6, QUI DU MEME TYPE DE CONDUCTIVITE QUE CELUI DE LA REGION SEMI-CONDUCTRICE 1 QUI ENTOURE LES ANNEAUX DE PROTECTION 5, MAIS DONT LA CONCENTRATION EN DOPANT EST SUPERIEURE A CELLE DE CETTE REGION, PRECEDE LE BORD DE CES ANNEAUX 5 QUI EST SITUE DU COTE DE LA JONCTION P-N CORRESPONDANTE. APPLICATION AUX STRUCTURES A ANNEAUX DE PROTECTION AFIN DE REDUIRE LA SURFACE NECESSAIRE A CES ANNEAUX.
FR7925103A 1978-10-11 1979-10-09 Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection Granted FR2438916A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1053978 1978-10-11

Publications (2)

Publication Number Publication Date
FR2438916A1 true FR2438916A1 (fr) 1980-05-09
FR2438916B1 FR2438916B1 (fr) 1984-10-12

Family

ID=4364288

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7925103A Granted FR2438916A1 (fr) 1978-10-11 1979-10-09 Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection

Country Status (5)

Country Link
US (1) US4305085A (fr)
JP (1) JPS5553455A (fr)
DE (1) DE2846637A1 (fr)
FR (1) FR2438916A1 (fr)
GB (1) GB2033657B (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126968A (en) * 1980-03-10 1981-10-05 Mitsubishi Electric Corp Semiconductor device
JPS5778171A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Thyristor
DE3110000C2 (de) * 1981-03-14 1986-04-30 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher Sperrfähigkeit
CH657478A5 (en) * 1982-08-16 1986-08-29 Bbc Brown Boveri & Cie Power semiconductor component
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
JPS60119776A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
DE3832748A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode
JP2513010B2 (ja) * 1988-12-27 1996-07-03 日本電気株式会社 半導体集積回路の入力保護装置
US5155568A (en) * 1989-04-14 1992-10-13 Hewlett-Packard Company High-voltage semiconductor device
US5032878A (en) * 1990-01-02 1991-07-16 Motorola, Inc. High voltage planar edge termination using a punch-through retarding implant
JP2701502B2 (ja) * 1990-01-25 1998-01-21 日産自動車株式会社 半導体装置
CH683388A5 (de) * 1991-03-15 1994-02-28 Landis & Gyr Business Support Anordnung zur Eigenschaftsverbesserung von mit P/N-Uebergängen versehenen Halbleiterstrukturen.
SE9701724D0 (sv) * 1997-05-09 1997-05-09 Abb Research Ltd A pn-diode of SiC and a method for production thereof
GB2355110A (en) * 1999-08-11 2001-04-11 Mitel Semiconductor Ltd High voltage semiconductor device termination structure
JP2008277353A (ja) * 2007-04-25 2008-11-13 Matsushita Electric Ind Co Ltd 半導体装置
US7915129B2 (en) * 2009-04-22 2011-03-29 Polar Semiconductor, Inc. Method of fabricating high-voltage metal oxide semiconductor transistor devices
US8536659B2 (en) * 2009-07-30 2013-09-17 Polar Seminconductor, Inc. Semiconductor device with integrated channel stop and body contact
US9818742B2 (en) 2012-05-11 2017-11-14 Polar Semiconductor, Llc Semiconductor device isolation using an aligned diffusion and polysilicon field plate
CN105051902A (zh) * 2013-03-27 2015-11-11 丰田自动车株式会社 纵型半导体装置
RU188679U1 (ru) * 2018-12-25 2019-04-22 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Полупроводниковый прибор

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
FR1594662A (fr) * 1967-10-14 1970-06-08
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
US4046609A (en) * 1970-10-05 1977-09-06 U.S. Philips Corporation Method of manufacturing photo-diodes utilizing sequential diffusion

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
NL6904543A (fr) * 1969-03-25 1970-09-29
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
JPS523277B2 (fr) * 1973-05-19 1977-01-27
JPS573225B2 (fr) * 1974-08-19 1982-01-20
JPS51122567U (fr) * 1975-03-25 1976-10-04
CH594989A5 (fr) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
FR1594662A (fr) * 1967-10-14 1970-06-08
US4046609A (en) * 1970-10-05 1977-09-06 U.S. Philips Corporation Method of manufacturing photo-diodes utilizing sequential diffusion

Also Published As

Publication number Publication date
GB2033657B (en) 1983-05-18
JPS6339109B2 (fr) 1988-08-03
FR2438916B1 (fr) 1984-10-12
GB2033657A (en) 1980-05-21
US4305085A (en) 1981-12-08
JPS5553455A (en) 1980-04-18
DE2846637A1 (de) 1980-04-30

Similar Documents

Publication Publication Date Title
FR2438916A1 (fr) Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection
CA2076300A1 (fr) Elimination des discontinuites dans les bandes d'heterojonctions
ES8206917A1 (es) Un dispositivo semiconductor perfeccionado
KR880700468A (ko) 반도체 장치
JPS6471163A (en) Semiconductor device for protecting electrical excessive stress
KR940001385A (ko) 광 반도체 장치 및 그 제조 방법
FR2438915A1 (fr) Composant a semi-conducteur de puissance et a anneaux protecteurs
FR2414796A1 (fr) Dispositif semi-conducteur mis a heterojonction
FR2376513A1 (fr) Dispositif semiconducteur muni d'un film protecteur
GB1393792A (en) Field effect transistor
ATE214520T1 (de) Diamant-halbleiteranordnung
SE7910457L (sv) Minnescell for ett statiskt minne och statiskt minne med en sadan cell
EP0767500A3 (fr) Dispositif semi-conducteur de puissance avec défauts de réseau
ES253851A1 (es) Aparato repetidor semiconductor
FR2390015A1 (fr)
ATE170333T1 (de) Verfahren zum herstellen einer halbleiteranordnung mit schottky-übergang
JPS54101283A (en) Gate protective device
JPS55111171A (en) Field-effect semiconductor device
SE7708385L (sv) Halvledarkomponent
EP0093086A3 (fr) Dispositif semiconducteur bipolaire et circuit MOS incorporant un tel dispositif
FR2454702A1 (fr) Dispositif semi-conducteur notamment diode, transistor, thyristor comportant des moyens ameliores de passivation
FR2410366A1 (fr) Transistor de type mesa et procede de realisation de ce transistor
JPS5548964A (en) High-voltage-resisting planar semiconductor device
KR860007749A (ko) Sbd를 가진 고내압 바이포라 트랜지스터
JPS55113366A (en) High dielectric breakdown voltage semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse