FR1594662A - - Google Patents

Info

Publication number
FR1594662A
FR1594662A FR1594662DA FR1594662A FR 1594662 A FR1594662 A FR 1594662A FR 1594662D A FR1594662D A FR 1594662DA FR 1594662 A FR1594662 A FR 1594662A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1594662A publication Critical patent/FR1594662A/fr
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR1594662D 1967-10-14 1968-10-14 Expired FR1594662A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT5335267 1967-10-14

Publications (1)

Publication Number Publication Date
FR1594662A true FR1594662A (fr) 1970-06-08

Family

ID=11282058

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1594662D Expired FR1594662A (fr) 1967-10-14 1968-10-14

Country Status (2)

Country Link
DE (1) DE1789043A1 (fr)
FR (1) FR1594662A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2320579A1 (de) * 1972-04-20 1973-11-08 Sony Corp Halbleiterelement
FR2230081A1 (fr) * 1973-05-19 1974-12-13 Sony Corp
FR2438916A1 (fr) * 1978-10-11 1980-05-09 Bbc Brown Boveri & Cie Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection
FR2568724A1 (fr) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Composant semi-conducteur de puissance a tension de claquage elevee
EP0661753A1 (fr) * 1994-01-04 1995-07-05 Motorola, Inc. Structure de semi-conducteur avec anneau limiteur de champ et méthode de fabrication
FR2817658A1 (fr) * 2000-10-31 2002-06-07 Fuji Electric Co Ltd Dispositif semi-conducteur

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3219888A1 (de) * 1982-05-27 1983-12-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Planares halbleiterbauelement und verfahren zur herstellung
US5345101A (en) * 1993-06-28 1994-09-06 Motorola, Inc. High voltage semiconductor structure and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2320579A1 (de) * 1972-04-20 1973-11-08 Sony Corp Halbleiterelement
FR2230081A1 (fr) * 1973-05-19 1974-12-13 Sony Corp
FR2438916A1 (fr) * 1978-10-11 1980-05-09 Bbc Brown Boveri & Cie Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection
FR2568724A1 (fr) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Composant semi-conducteur de puissance a tension de claquage elevee
EP0661753A1 (fr) * 1994-01-04 1995-07-05 Motorola, Inc. Structure de semi-conducteur avec anneau limiteur de champ et méthode de fabrication
FR2817658A1 (fr) * 2000-10-31 2002-06-07 Fuji Electric Co Ltd Dispositif semi-conducteur
FR2826184A1 (fr) * 2000-10-31 2002-12-20 Fuji Electric Co Ltd Dispositif semi-conducteur a haute tension de claquage

Also Published As

Publication number Publication date
DE1789043A1 (de) 1972-01-05

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Legal Events

Date Code Title Description
ST Notification of lapse