FR1594662A - - Google Patents
Info
- Publication number
- FR1594662A FR1594662A FR1594662DA FR1594662A FR 1594662 A FR1594662 A FR 1594662A FR 1594662D A FR1594662D A FR 1594662DA FR 1594662 A FR1594662 A FR 1594662A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT5335267 | 1967-10-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1594662A true FR1594662A (fr) | 1970-06-08 |
Family
ID=11282058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1594662D Expired FR1594662A (fr) | 1967-10-14 | 1968-10-14 |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1789043A1 (fr) |
FR (1) | FR1594662A (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2320579A1 (de) * | 1972-04-20 | 1973-11-08 | Sony Corp | Halbleiterelement |
FR2230081A1 (fr) * | 1973-05-19 | 1974-12-13 | Sony Corp | |
FR2438916A1 (fr) * | 1978-10-11 | 1980-05-09 | Bbc Brown Boveri & Cie | Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection |
FR2568724A1 (fr) * | 1984-08-03 | 1986-02-07 | Centre Nat Rech Scient | Composant semi-conducteur de puissance a tension de claquage elevee |
EP0661753A1 (fr) * | 1994-01-04 | 1995-07-05 | Motorola, Inc. | Structure de semi-conducteur avec anneau limiteur de champ et méthode de fabrication |
FR2817658A1 (fr) * | 2000-10-31 | 2002-06-07 | Fuji Electric Co Ltd | Dispositif semi-conducteur |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3219888A1 (de) * | 1982-05-27 | 1983-12-01 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planares halbleiterbauelement und verfahren zur herstellung |
US5345101A (en) * | 1993-06-28 | 1994-09-06 | Motorola, Inc. | High voltage semiconductor structure and method |
-
1968
- 1968-09-27 DE DE19681789043 patent/DE1789043A1/de active Pending
- 1968-10-14 FR FR1594662D patent/FR1594662A/fr not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2320579A1 (de) * | 1972-04-20 | 1973-11-08 | Sony Corp | Halbleiterelement |
FR2230081A1 (fr) * | 1973-05-19 | 1974-12-13 | Sony Corp | |
FR2438916A1 (fr) * | 1978-10-11 | 1980-05-09 | Bbc Brown Boveri & Cie | Composant a semi-conducteurs, a au moins une jonction planaire p-n et a anneaux de protection |
FR2568724A1 (fr) * | 1984-08-03 | 1986-02-07 | Centre Nat Rech Scient | Composant semi-conducteur de puissance a tension de claquage elevee |
EP0661753A1 (fr) * | 1994-01-04 | 1995-07-05 | Motorola, Inc. | Structure de semi-conducteur avec anneau limiteur de champ et méthode de fabrication |
FR2817658A1 (fr) * | 2000-10-31 | 2002-06-07 | Fuji Electric Co Ltd | Dispositif semi-conducteur |
FR2826184A1 (fr) * | 2000-10-31 | 2002-12-20 | Fuji Electric Co Ltd | Dispositif semi-conducteur a haute tension de claquage |
Also Published As
Publication number | Publication date |
---|---|
DE1789043A1 (de) | 1972-01-05 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |