FR2428274A1 - Appareil et procede d'alignement a haute resolution, notamment pour la realisation de dispositifs semi-conducteurs miniatures - Google Patents

Appareil et procede d'alignement a haute resolution, notamment pour la realisation de dispositifs semi-conducteurs miniatures

Info

Publication number
FR2428274A1
FR2428274A1 FR7914228A FR7914228A FR2428274A1 FR 2428274 A1 FR2428274 A1 FR 2428274A1 FR 7914228 A FR7914228 A FR 7914228A FR 7914228 A FR7914228 A FR 7914228A FR 2428274 A1 FR2428274 A1 FR 2428274A1
Authority
FR
France
Prior art keywords
semiconductor devices
production
high resolution
alignment apparatus
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7914228A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of FR2428274A1 publication Critical patent/FR2428274A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un appareil et un procédé d'alignement précis d'un masque et d'un substrat par moirage produit par superposition des réseaux de diffraction. Les réseaux comprennent des première et seconde configurations composés respectivement de lignes et espaces horizontaux et verticaux. La première configuration comprend des lignes horizontales et verticales d'une seconde largeur qui diffère de celle des lignes de la première configuration d'une faible quantité DELTA . Les configurations sont superposées pour obtenir un moirage. L'alignement assure une configuration symétrique. Applications dans la fabrication de dispositifs semi-conducteurs sub-micrométriques.
FR7914228A 1978-06-05 1979-06-01 Appareil et procede d'alignement a haute resolution, notamment pour la realisation de dispositifs semi-conducteurs miniatures Withdrawn FR2428274A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/912,612 US4193687A (en) 1978-06-05 1978-06-05 High resolution alignment technique and apparatus

Publications (1)

Publication Number Publication Date
FR2428274A1 true FR2428274A1 (fr) 1980-01-04

Family

ID=25432186

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7914228A Withdrawn FR2428274A1 (fr) 1978-06-05 1979-06-01 Appareil et procede d'alignement a haute resolution, notamment pour la realisation de dispositifs semi-conducteurs miniatures

Country Status (8)

Country Link
US (1) US4193687A (fr)
JP (1) JPS598058B2 (fr)
CA (1) CA1119396A (fr)
DE (1) DE2922017A1 (fr)
FR (1) FR2428274A1 (fr)
GB (1) GB2022289B (fr)
IT (1) IT1118102B (fr)
NL (1) NL7903676A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612172A (en) * 1979-07-11 1981-02-06 Ricoh Co Ltd Mark for adjusting degree of balance of installation of solid scanning element
US4691434A (en) * 1982-02-19 1987-09-08 Lasarray Holding Ag Method of making electrically conductive regions in monolithic semiconductor devices as applied to a semiconductor device
US4388386A (en) * 1982-06-07 1983-06-14 International Business Machines Corporation Mask set mismatch
US4536239A (en) * 1983-07-18 1985-08-20 Nicolet Instrument Corporation Multi-layer circuit board inspection system
US4568189A (en) * 1983-09-26 1986-02-04 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for aligning a mask and wafer in the fabrication of integrated circuits
DE3336901A1 (de) * 1983-10-11 1985-04-18 Deutsche Itt Industries Gmbh, 7800 Freiburg Maskenmarkierung und substratmarkierung fuer ein verfahren zum justieren einer eine maskenmarkierung enthaltenden photomaske auf einer substratmarkierung
JPH0732242B2 (ja) * 1984-12-24 1995-04-10 株式会社日立製作所 固体撮像装置の製造方法
DE3530439A1 (de) * 1985-08-26 1987-02-26 Siemens Ag Vorrichtung zum justieren einer mit mindestens einer justiermarke versehenen maske bezueglich eines mit mindestens einer gitterstruktur versehenen halbleiterwafers
GB8528826D0 (en) * 1985-11-22 1985-12-24 Gen Electric Co Plc Alignment techniques
US4814626A (en) * 1985-12-13 1989-03-21 Siemens Aktiengesellschaft Method for high precision position measurement of two-dimensional structures
JP3200894B2 (ja) * 1991-03-05 2001-08-20 株式会社日立製作所 露光方法及びその装置
KR0144082B1 (ko) * 1994-04-01 1998-08-17 김주용 레티클 및 그 레티클을 사용한 가림막 세팅 방법
US6150231A (en) * 1998-06-15 2000-11-21 Siemens Aktiengesellschaft Overlay measurement technique using moire patterns
DE10142318C1 (de) * 2001-08-30 2003-01-30 Advanced Micro Devices Inc Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690881A (en) * 1970-09-28 1972-09-12 Bell Telephone Labor Inc Moire pattern aligning of photolithographic mask
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
DE2326059A1 (de) * 1972-05-22 1974-03-14 Hitachi Ltd Verfahren und maske zum ausrichten von mustern

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3688570A (en) * 1970-06-05 1972-09-05 Polaroid Corp Angular deflection meter
US3806254A (en) * 1971-12-08 1974-04-23 Information Storage Systems Agc servo system having error signal responsive to a non-extinguishable intensity light energy signal
DE2521618B1 (de) * 1975-05-15 1976-03-11 Zeiss Carl Fa Vorrichtung zum Messen oder Einstellen von zweidimensionalen Lagekoordinaten
JPS5212064A (en) * 1975-07-15 1977-01-29 Seiko Epson Corp Blade exchangeable razor
JPS5215510A (en) * 1975-07-28 1977-02-05 Nippon Chemical Ind Optical glass
US4047585A (en) * 1976-03-08 1977-09-13 Pitney-Bowes, Inc. Scale optical detector with spring constant variation compensator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690881A (en) * 1970-09-28 1972-09-12 Bell Telephone Labor Inc Moire pattern aligning of photolithographic mask
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
DE2326059A1 (de) * 1972-05-22 1974-03-14 Hitachi Ltd Verfahren und maske zum ausrichten von mustern

Also Published As

Publication number Publication date
GB2022289B (en) 1983-04-27
US4193687A (en) 1980-03-18
NL7903676A (nl) 1979-12-07
GB2022289A (en) 1979-12-12
IT7949289A0 (it) 1979-06-04
IT1118102B (it) 1986-02-24
DE2922017A1 (de) 1979-12-06
JPS54159878A (en) 1979-12-18
JPS598058B2 (ja) 1984-02-22
CA1119396A (fr) 1982-03-09

Similar Documents

Publication Publication Date Title
FR2428274A1 (fr) Appareil et procede d'alignement a haute resolution, notamment pour la realisation de dispositifs semi-conducteurs miniatures
YU17796A (sh) Kristalni oblik 2-metil-tieno-benzodiazepina, njegove farmaceutske formulacije i postupak za njegovo dobijanje
FR2292332A1 (fr) Procede d'implantation ionique a travers les ouvertures d'un masque en laque photosensible
DE3668459D1 (de) Neue diphosphonsaeurederivate, verfahren zu deren herstellung und diese verbindungen enthaltende arzneimittel.
CA1270934C (fr) Masques a modulation de phase spatiale et methodes de fabrication de ces masques et de reseaux de diffraction a dephasage
IT1036326B (it) Fotomaschera per litografia parti colarmente per la produzione di microcircuiti a semiconduttori
BE810777A (fr) Procede pour la fabrication de circuits imprimes sur les deux faces d 'un substrat en matiere ceramique
BE862131A (fr) Procede pour la production d'elements a circuits imprimes en utilisant une feuille photosensible auto-supportee
FR2308651A2 (fr) Procede de production d'une dispersion stable de particules d'un copolymere
FR2324722A1 (fr) Procede pour la preparation de solutions concentrees de tensio-actifs fluores amphoteres
FR2521315B1 (fr) Procede de formation d'une configuration dans une couche photoresist de seleniure de germanium, notamment pour realiser des microcircuits electroniques
EP0057268A3 (fr) Méthode pour la fabrication de masques lithographiques opaques aux rayons X
JPS52139374A (en) Alignment pattern forming method for mask alignment
JPS5212006A (en) Method of making lithographic press plate employing laser beam
JPS5284758A (en) Manufacturing method for deflecting plate of optical scanner
FR2284901A1 (fr) Procede pour la realisation d'un cliche applicable en particulier a la formation d'un masque de tube-image de television
JPS5279664A (en) Forming method for electrodes of semiconductor devices
JPS53110473A (en) Forming method for film pattern
DE3635407A1 (de) Vorrichtung zur herstellung langer holographischer beugungsgitter
BE845952A (fr) Procede pour produire des proportions elevees d'oligomeres cycliques d'un halogenure phosphonitrilique
LU78350A1 (fr) Procede de fabrication d'un diaphragme permeable pour cellule d'electrolyse
FR2415823A1 (fr) Composition photoreticulable contenant un polymere a groupe carbonyle, produit photosensible obtenu a partir de cette composition et procede de formation d'image qui utilise ce produit
IT980926B (it) Procedimento per la produzione di un disegno di mascheramento su un substrato mediante esposizione ad un fascio elettronico
JPS5243444A (en) Process for fabricating an acoustic hologram
JPS63139205A (ja) マスク・ウエハの間隙設定方法

Legal Events

Date Code Title Description
ST Notification of lapse