FR2414778A1 - Element de memoire statique a acces aleatoire - Google Patents

Element de memoire statique a acces aleatoire

Info

Publication number
FR2414778A1
FR2414778A1 FR7800933A FR7800933A FR2414778A1 FR 2414778 A1 FR2414778 A1 FR 2414778A1 FR 7800933 A FR7800933 A FR 7800933A FR 7800933 A FR7800933 A FR 7800933A FR 2414778 A1 FR2414778 A1 FR 2414778A1
Authority
FR
France
Prior art keywords
random access
transistor
memory element
emitter
static memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7800933A
Other languages
English (en)
French (fr)
Other versions
FR2414778B1 (
Inventor
Ngu Tung Pham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7800933A priority Critical patent/FR2414778A1/fr
Priority to DE7979400009T priority patent/DE2960593D1/de
Priority to EP79400009A priority patent/EP0003193B1/fr
Priority to US06/002,308 priority patent/US4215424A/en
Priority to JP284479A priority patent/JPS54101629A/ja
Publication of FR2414778A1 publication Critical patent/FR2414778A1/fr
Application granted granted Critical
Publication of FR2414778B1 publication Critical patent/FR2414778B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7800933A 1978-01-13 1978-01-13 Element de memoire statique a acces aleatoire Granted FR2414778A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7800933A FR2414778A1 (fr) 1978-01-13 1978-01-13 Element de memoire statique a acces aleatoire
DE7979400009T DE2960593D1 (en) 1978-01-13 1979-01-04 Static random access memory cell
EP79400009A EP0003193B1 (fr) 1978-01-13 1979-01-04 Elément de mémoire statique à accès aléatoire
US06/002,308 US4215424A (en) 1978-01-13 1979-01-10 Descriptive resume random access static memory element
JP284479A JPS54101629A (en) 1978-01-13 1979-01-12 Immediate access static memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7800933A FR2414778A1 (fr) 1978-01-13 1978-01-13 Element de memoire statique a acces aleatoire

Publications (2)

Publication Number Publication Date
FR2414778A1 true FR2414778A1 (fr) 1979-08-10
FR2414778B1 FR2414778B1 ( ) 1982-01-29

Family

ID=9203425

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7800933A Granted FR2414778A1 (fr) 1978-01-13 1978-01-13 Element de memoire statique a acces aleatoire

Country Status (5)

Country Link
US (1) US4215424A ( )
EP (1) EP0003193B1 ( )
JP (1) JPS54101629A ( )
DE (1) DE2960593D1 ( )
FR (1) FR2414778A1 ( )

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409673A (en) * 1980-12-31 1983-10-11 Ibm Corporation Single isolation cell for DC stable memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953866A (en) * 1974-05-10 1976-04-27 Signetics Corporation Cross coupled semiconductor memory cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2913704A (en) * 1954-07-06 1959-11-17 Sylvania Electric Prod Multiple emitter matrices
US3781828A (en) * 1972-05-04 1973-12-25 Ibm Three-dimensionally addressed memory
FR2269788A1 (en) * 1974-04-30 1975-11-28 Thomson Csf Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
FR2288372A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Element de memoires a semi-conducteurs et memoires formees de matrices de tels elements
FR2309084A1 (fr) * 1975-04-22 1976-11-19 Radiotechnique Compelec Dispositif a seuils pour circuits logiques integres
FR2341232A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Element logique bistable
FR2344187A1 (fr) * 1976-03-09 1977-10-07 Thomson Csf Element pour circuit logique integre

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953866A (en) * 1974-05-10 1976-04-27 Signetics Corporation Cross coupled semiconductor memory cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXRV/73 *
EXRV/77 *

Also Published As

Publication number Publication date
US4215424A (en) 1980-07-29
DE2960593D1 (en) 1981-11-12
JPS54101629A (en) 1979-08-10
FR2414778B1 ( ) 1982-01-29
EP0003193B1 (fr) 1981-08-12
EP0003193A1 (fr) 1979-07-25

Similar Documents

Publication Publication Date Title
NL182605B (nl) Hoogfrequent-transistorinrichting.
IT7924143A0 (it) Sensore magnetico e transistore con tensione a valanga controllata.
FR2414778A1 (fr) Element de memoire statique a acces aleatoire
KR940022909A (ko) 전하결합소자형 이미지 센서
FR2344171A1 (fr) Hacheur comportant des interrupteurs a transistors
FR1462742A (fr) Circuit d'allumage avec régulateur de tension
FR2367350A1 (fr) Circuit logique integre a injection pour interfaces
DE3876359D1 (de) Isolierter gate-transistor, verwendbar bei niedriger drain-source-spannung.
JPS5263684A (en) Non-volatile semiconductor memory device
GB1053428A ( )
GB1430775A (en) Light intenstity integrating and memory circuit
FR1504987A (fr) Dispositif de commutation du branchement avec l'une de deux ou de plusieurs conduites d'alimentation de grand diamètre
KR950007770Y1 (ko) 씨-모스 트랜지스터 구조
GB1178232A (en) Improvements in or relating to gain control circuits.
BE865256A (fr) Amplificateur a transistors a plusieurs etages pour tensions alternatives
JPS51139273A (en) Mis device
JPS57172591A (en) Read-only semiconductor storage device
GB1437227A (en) Light amount memorising circuit
JPS5245287A (en) Semiconductor memory element
IT1077580B (it) Transistore planare 12l monoliticamente integrato
BE607241A (fr) Circuit à transistors pour la transmission d'un courant d'intensité déterminée et de sens réversible
GB1205980A (en) Improvements in or relating to contactless switches
JPS5348657A (en) Signal control circuit
FR1346984A (fr) Circuit de commande d'un montage basculeur bistable à transistors
JPS5534385A (en) Information memory unit

Legal Events

Date Code Title Description
CL Concession to grant licences
ST Notification of lapse