JPS54101629A - Immediate access static memory element - Google Patents

Immediate access static memory element

Info

Publication number
JPS54101629A
JPS54101629A JP284479A JP284479A JPS54101629A JP S54101629 A JPS54101629 A JP S54101629A JP 284479 A JP284479 A JP 284479A JP 284479 A JP284479 A JP 284479A JP S54101629 A JPS54101629 A JP S54101629A
Authority
JP
Japan
Prior art keywords
memory element
static memory
immediate access
access static
immediate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP284479A
Other languages
English (en)
Inventor
Tan Fuan Guu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS54101629A publication Critical patent/JPS54101629A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
JP284479A 1978-01-13 1979-01-12 Immediate access static memory element Pending JPS54101629A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7800933A FR2414778A1 (fr) 1978-01-13 1978-01-13 Element de memoire statique a acces aleatoire

Publications (1)

Publication Number Publication Date
JPS54101629A true JPS54101629A (en) 1979-08-10

Family

ID=9203425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP284479A Pending JPS54101629A (en) 1978-01-13 1979-01-12 Immediate access static memory element

Country Status (5)

Country Link
US (1) US4215424A (ja)
EP (1) EP0003193B1 (ja)
JP (1) JPS54101629A (ja)
DE (1) DE2960593D1 (ja)
FR (1) FR2414778A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409673A (en) * 1980-12-31 1983-10-11 Ibm Corporation Single isolation cell for DC stable memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2913704A (en) * 1954-07-06 1959-11-17 Sylvania Electric Prod Multiple emitter matrices
US3781828A (en) * 1972-05-04 1973-12-25 Ibm Three-dimensionally addressed memory
FR2269788A1 (en) * 1974-04-30 1975-11-28 Thomson Csf Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity
US3953866A (en) * 1974-05-10 1976-04-27 Signetics Corporation Cross coupled semiconductor memory cell
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
FR2288372A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Element de memoires a semi-conducteurs et memoires formees de matrices de tels elements
FR2309084A1 (fr) * 1975-04-22 1976-11-19 Radiotechnique Compelec Dispositif a seuils pour circuits logiques integres
FR2341232A1 (fr) * 1976-02-13 1977-09-09 Thomson Csf Element logique bistable
FR2344187A1 (fr) * 1976-03-09 1977-10-07 Thomson Csf Element pour circuit logique integre

Also Published As

Publication number Publication date
US4215424A (en) 1980-07-29
EP0003193B1 (fr) 1981-08-12
DE2960593D1 (en) 1981-11-12
FR2414778A1 (fr) 1979-08-10
EP0003193A1 (fr) 1979-07-25
FR2414778B1 (ja) 1982-01-29

Similar Documents

Publication Publication Date Title
JPS54162934A (en) Read only memory
JPS558696A (en) Nonnvolatile memory
DE3071923D1 (en) Memory device
JPS5690482A (en) Memory structuring element
JPS56134387A (en) Semiconductor memory
JPS5391538A (en) Memory access unit
GB2018076A (en) Memory sense amplifier
JPS55146679A (en) Memory access device
JPS5552274A (en) Nonnvolatile memory
GB2037521B (en) Memory device
JPS5516591A (en) Special effect memory
DE3068493D1 (en) Memory device
JPS56124259A (en) Semiconductor memory
JPS5667888A (en) Imageehandling memory unit
JPS54142925A (en) Memory
JPS567284A (en) Memory access device
JPS55129387A (en) Memory element
DE3070140D1 (en) Memory device
DE2967586D1 (en) Row-column-addressable memory with serial-parallel-serial configuration
GB2056209B (en) Memory device
GB2014767B (en) Memory devices
JPS5683884A (en) Multiiaccess memory
JPS567292A (en) Dsemiconductor memory
JPS5593253A (en) Semiconductor memory
JPS55127686A (en) Time memory unit