DE2960593D1 - Static random access memory cell - Google Patents

Static random access memory cell

Info

Publication number
DE2960593D1
DE2960593D1 DE7979400009T DE2960593T DE2960593D1 DE 2960593 D1 DE2960593 D1 DE 2960593D1 DE 7979400009 T DE7979400009 T DE 7979400009T DE 2960593 T DE2960593 T DE 2960593T DE 2960593 D1 DE2960593 D1 DE 2960593D1
Authority
DE
Germany
Prior art keywords
memory cell
random access
access memory
static random
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979400009T
Other languages
German (de)
Inventor
Ngu Tung Pham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE2960593D1 publication Critical patent/DE2960593D1/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
DE7979400009T 1978-01-13 1979-01-04 Static random access memory cell Expired DE2960593D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7800933A FR2414778A1 (en) 1978-01-13 1978-01-13 STATIC MEMORY ELEMENT WITH RANDOM ACCESS

Publications (1)

Publication Number Publication Date
DE2960593D1 true DE2960593D1 (en) 1981-11-12

Family

ID=9203425

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979400009T Expired DE2960593D1 (en) 1978-01-13 1979-01-04 Static random access memory cell

Country Status (5)

Country Link
US (1) US4215424A (en)
EP (1) EP0003193B1 (en)
JP (1) JPS54101629A (en)
DE (1) DE2960593D1 (en)
FR (1) FR2414778A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409673A (en) * 1980-12-31 1983-10-11 Ibm Corporation Single isolation cell for DC stable memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2913704A (en) * 1954-07-06 1959-11-17 Sylvania Electric Prod Multiple emitter matrices
US3781828A (en) * 1972-05-04 1973-12-25 Ibm Three-dimensionally addressed memory
FR2269788A1 (en) * 1974-04-30 1975-11-28 Thomson Csf Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity
US3953866A (en) * 1974-05-10 1976-04-27 Signetics Corporation Cross coupled semiconductor memory cell
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
FR2288372A1 (en) * 1974-10-18 1976-05-14 Thomson Csf ELEMENT OF SEMICONDUCTOR MEMORIES AND MEMORIES IN THE FORM OF MATRIX OF SUCH ELEMENTS
FR2309084A1 (en) * 1975-04-22 1976-11-19 Radiotechnique Compelec THRESHOLD DEVICE FOR INTEGRATED LOGIC CIRCUITS
FR2341232A1 (en) * 1976-02-13 1977-09-09 Thomson Csf BISTABLE LOGIC ELEMENT
FR2344187A1 (en) * 1976-03-09 1977-10-07 Thomson Csf ELEMENT FOR INTEGRATED LOGIC CIRCUIT

Also Published As

Publication number Publication date
US4215424A (en) 1980-07-29
JPS54101629A (en) 1979-08-10
FR2414778B1 (en) 1982-01-29
EP0003193B1 (en) 1981-08-12
FR2414778A1 (en) 1979-08-10
EP0003193A1 (en) 1979-07-25

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee