IT1077580B - Transistore planare 12l monoliticamente integrato - Google Patents
Transistore planare 12l monoliticamente integratoInfo
- Publication number
- IT1077580B IT1077580B IT1923877A IT1923877A IT1077580B IT 1077580 B IT1077580 B IT 1077580B IT 1923877 A IT1923877 A IT 1923877A IT 1923877 A IT1923877 A IT 1923877A IT 1077580 B IT1077580 B IT 1077580B
- Authority
- IT
- Italy
- Prior art keywords
- monolithically integrated
- planar transistor
- transistor monolithically
- planar
- integrated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762602395 DE2602395C3 (de) | 1976-01-23 | 1976-01-23 | Monolithisch integrierter I2 L-Planartransistor und Verfahren zu seiner Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1077580B true IT1077580B (it) | 1985-05-04 |
Family
ID=5968045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1923877A IT1077580B (it) | 1976-01-23 | 1977-01-13 | Transistore planare 12l monoliticamente integrato |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2602395C3 (it) |
FR (1) | FR2339254A1 (it) |
GB (1) | GB1574461A (it) |
IT (1) | IT1077580B (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2855768C3 (de) * | 1978-12-22 | 1981-10-15 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Schaltung |
FR2457564A1 (fr) * | 1979-05-23 | 1980-12-19 | Thomson Csf | Transistor pnp pour circuit integre bipolaire et son procede de fabrication |
-
1976
- 1976-01-23 DE DE19762602395 patent/DE2602395C3/de not_active Expired
-
1977
- 1977-01-13 IT IT1923877A patent/IT1077580B/it active
- 1977-01-18 GB GB189577A patent/GB1574461A/en not_active Expired
- 1977-01-20 FR FR7701556A patent/FR2339254A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2339254A1 (fr) | 1977-08-19 |
DE2602395B2 (de) | 1978-01-26 |
GB1574461A (en) | 1980-09-10 |
DE2602395A1 (de) | 1977-07-28 |
DE2602395C3 (de) | 1978-10-12 |
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