FR2410879A1 - Limiteur de courant a demiconducteurs - Google Patents
Limiteur de courant a demiconducteursInfo
- Publication number
- FR2410879A1 FR2410879A1 FR7833318A FR7833318A FR2410879A1 FR 2410879 A1 FR2410879 A1 FR 2410879A1 FR 7833318 A FR7833318 A FR 7833318A FR 7833318 A FR7833318 A FR 7833318A FR 2410879 A1 FR2410879 A1 FR 2410879A1
- Authority
- FR
- France
- Prior art keywords
- type
- current limiter
- current
- layer
- semiconductor current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
L'INVENTION CONCERNE LES LIMITEURS DE COURANT. UN LIMITEUR DE COURANT COMPREND UN SUBSTRAT DE TYPE N QUI PORTE UNE COUCHE EPITAXIALE 4, DE TYPE N. UNE COUCHE PERFOREE 6, DE TYPE P, EST DIFFUSEE DANS LA COUCHE 4 POUR FORMER PLUSIEURS REGIONS ACTIVES PONCTUELLES, 8, DE TYPE N. LES REGIONS ACTIVES SONT TRAVERSEES PAR UN COURANT, TANDIS QUE LA REGION INACTIVE QUI LES ENTOURE FAIT FONCTION DE RADIATEUR. APPLICATION AUX CIRCUITS DE COMMANDE A THYRISTORS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/855,933 US4187513A (en) | 1977-11-30 | 1977-11-30 | Solid state current limiter |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2410879A1 true FR2410879A1 (fr) | 1979-06-29 |
FR2410879B3 FR2410879B3 (fr) | 1981-10-02 |
Family
ID=25322467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7833318A Granted FR2410879A1 (fr) | 1977-11-30 | 1978-11-24 | Limiteur de courant a demiconducteurs |
Country Status (6)
Country | Link |
---|---|
US (1) | US4187513A (fr) |
JP (1) | JPS5477075A (fr) |
DE (1) | DE2846698A1 (fr) |
FR (1) | FR2410879A1 (fr) |
GB (1) | GB1599500A (fr) |
IT (1) | IT1109633B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995007548A1 (fr) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Limiteur de courant |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55132968U (fr) * | 1979-03-09 | 1980-09-20 | ||
DE2926757C2 (de) * | 1979-07-03 | 1983-08-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit negativem differentiellen Widerstand |
JPS6066518A (ja) * | 1983-09-21 | 1985-04-16 | Mitsubishi Electric Corp | 半導体集積回路 |
US4982248A (en) * | 1989-01-11 | 1991-01-01 | International Business Machines Corporation | Gated structure for controlling fluctuations in mesoscopic structures |
JP3983285B2 (ja) * | 1994-12-20 | 2007-09-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴイ | 供給電圧により負荷を動作させる回路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE572049A (fr) * | 1957-12-03 | 1900-01-01 | ||
US3516017A (en) * | 1967-06-14 | 1970-06-02 | Hitachi Ltd | Microwave semiconductor device |
US3689993A (en) * | 1971-07-26 | 1972-09-12 | Texas Instruments Inc | Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks |
US3852794A (en) * | 1972-05-11 | 1974-12-03 | Trustees Of Leland Stamford Ju | High speed bulk semiconductor microwave switch |
JPS5218110B2 (fr) * | 1973-09-20 | 1977-05-19 | ||
US3953879A (en) * | 1974-07-12 | 1976-04-27 | Massachusetts Institute Of Technology | Current-limiting field effect device |
US4134122A (en) * | 1974-11-29 | 1979-01-09 | Thomson-Csf | Hyperfrequency device with gunn effect |
FR2293068A1 (fr) * | 1974-11-29 | 1976-06-25 | Thomson Csf | Dispositif semi-conducteur a effet gunn |
JPS5220314A (en) * | 1975-08-07 | 1977-02-16 | Matsushita Electric Ind Co Ltd | Reservoir for storing hydrogen |
-
1977
- 1977-11-30 US US05/855,933 patent/US4187513A/en not_active Expired - Lifetime
-
1978
- 1978-05-24 GB GB22196/78A patent/GB1599500A/en not_active Expired
- 1978-08-31 JP JP10697478A patent/JPS5477075A/ja active Pending
- 1978-10-26 DE DE19782846698 patent/DE2846698A1/de not_active Ceased
- 1978-11-24 FR FR7833318A patent/FR2410879A1/fr active Granted
- 1978-11-29 IT IT69734/78A patent/IT1109633B/it active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995007548A1 (fr) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Limiteur de courant |
Also Published As
Publication number | Publication date |
---|---|
IT1109633B (it) | 1985-12-23 |
JPS5477075A (en) | 1979-06-20 |
FR2410879B3 (fr) | 1981-10-02 |
IT7869734A0 (it) | 1978-11-29 |
DE2846698A1 (de) | 1979-06-07 |
US4187513A (en) | 1980-02-05 |
GB1599500A (en) | 1981-10-07 |
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