IT7869734A0 - Limitatore di corrente e stato solido - Google Patents

Limitatore di corrente e stato solido

Info

Publication number
IT7869734A0
IT7869734A0 IT7869734A IT6973478A IT7869734A0 IT 7869734 A0 IT7869734 A0 IT 7869734A0 IT 7869734 A IT7869734 A IT 7869734A IT 6973478 A IT6973478 A IT 6973478A IT 7869734 A0 IT7869734 A0 IT 7869734A0
Authority
IT
Italy
Prior art keywords
solid state
current limiter
limiter
current
solid
Prior art date
Application number
IT7869734A
Other languages
English (en)
Other versions
IT1109633B (it
Original Assignee
Cutler Hammer World Trade Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutler Hammer World Trade Inc filed Critical Cutler Hammer World Trade Inc
Publication of IT7869734A0 publication Critical patent/IT7869734A0/it
Application granted granted Critical
Publication of IT1109633B publication Critical patent/IT1109633B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
IT69734/78A 1977-11-30 1978-11-29 Limitatore di corrente e stato solido IT1109633B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/855,933 US4187513A (en) 1977-11-30 1977-11-30 Solid state current limiter

Publications (2)

Publication Number Publication Date
IT7869734A0 true IT7869734A0 (it) 1978-11-29
IT1109633B IT1109633B (it) 1985-12-23

Family

ID=25322467

Family Applications (1)

Application Number Title Priority Date Filing Date
IT69734/78A IT1109633B (it) 1977-11-30 1978-11-29 Limitatore di corrente e stato solido

Country Status (6)

Country Link
US (1) US4187513A (it)
JP (1) JPS5477075A (it)
DE (1) DE2846698A1 (it)
FR (1) FR2410879A1 (it)
GB (1) GB1599500A (it)
IT (1) IT1109633B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132968U (it) * 1979-03-09 1980-09-20
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand
JPS6066518A (ja) * 1983-09-21 1985-04-16 Mitsubishi Electric Corp 半導体集積回路
US4982248A (en) * 1989-01-11 1991-01-01 International Business Machines Corporation Gated structure for controlling fluctuations in mesoscopic structures
EP0717880A1 (de) * 1993-09-08 1996-06-26 Siemens Aktiengesellschaft Strombegrenzer
JP3983285B2 (ja) * 1994-12-20 2007-09-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴイ 供給電圧により負荷を動作させる回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE572049A (it) * 1957-12-03 1900-01-01
US3516017A (en) * 1967-06-14 1970-06-02 Hitachi Ltd Microwave semiconductor device
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
US3852794A (en) * 1972-05-11 1974-12-03 Trustees Of Leland Stamford Ju High speed bulk semiconductor microwave switch
JPS5218110B2 (it) * 1973-09-20 1977-05-19
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
FR2293068A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Dispositif semi-conducteur a effet gunn
US4134122A (en) * 1974-11-29 1979-01-09 Thomson-Csf Hyperfrequency device with gunn effect
JPS5220314A (en) * 1975-08-07 1977-02-16 Matsushita Electric Ind Co Ltd Reservoir for storing hydrogen

Also Published As

Publication number Publication date
GB1599500A (en) 1981-10-07
FR2410879A1 (fr) 1979-06-29
JPS5477075A (en) 1979-06-20
IT1109633B (it) 1985-12-23
DE2846698A1 (de) 1979-06-07
US4187513A (en) 1980-02-05
FR2410879B3 (it) 1981-10-02

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