FR2404303A1 - DIRECT LOAD COUPLING COMPONENT - Google Patents

DIRECT LOAD COUPLING COMPONENT

Info

Publication number
FR2404303A1
FR2404303A1 FR7827076A FR7827076A FR2404303A1 FR 2404303 A1 FR2404303 A1 FR 2404303A1 FR 7827076 A FR7827076 A FR 7827076A FR 7827076 A FR7827076 A FR 7827076A FR 2404303 A1 FR2404303 A1 FR 2404303A1
Authority
FR
France
Prior art keywords
coupling component
load coupling
direct load
direct
coupled component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7827076A
Other languages
French (fr)
Other versions
FR2404303B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2404303A1 publication Critical patent/FR2404303A1/en
Application granted granted Critical
Publication of FR2404303B1 publication Critical patent/FR2404303B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un composant à couplage direct de charge. Dans ce composant à couplage direct de charge, qui comporte, sur un substrat semi-conducteur, un ensemble d'électrodes 10 à 13, 21 à 23, 31 à 33, 41 à 43, 50, le corps semi-conducteur comporte un substrat de GaAS semi-isolant sur lequel est disposée une couche de GaAs conductrice du type n possédant une concentration de porteurs de charge comprise entre 1.10**15 et 5.10**17 cm**-3, tandis que lesdites électrodes forment une jonction bloquante avec cette couche conductrice du type n. Application notamment aux dispositifs à transfert de charge rapides.A direct charge coupled component is disclosed. In this direct charge coupled component, which comprises, on a semiconductor substrate, a set of electrodes 10 to 13, 21 to 23, 31 to 33, 41 to 43, 50, the semiconductor body has a substrate of semi-insulating GaAS on which is disposed a layer of conductive GaAs of type n having a concentration of charge carriers between 1.10 ** 15 and 5.10 ** 17 cm ** - 3, while said electrodes form a blocking junction with this n-type conductive layer. Application in particular to fast charge transfer devices.

FR7827076A 1977-09-26 1978-09-21 DIRECT LOAD COUPLING COMPONENT Granted FR2404303A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743245 DE2743245A1 (en) 1977-09-26 1977-09-26 CHARGE-COUPLED COMPONENT

Publications (2)

Publication Number Publication Date
FR2404303A1 true FR2404303A1 (en) 1979-04-20
FR2404303B1 FR2404303B1 (en) 1983-08-19

Family

ID=6019909

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7827076A Granted FR2404303A1 (en) 1977-09-26 1978-09-21 DIRECT LOAD COUPLING COMPONENT

Country Status (5)

Country Link
US (1) US4264915A (en)
JP (1) JPS5457869A (en)
DE (1) DE2743245A1 (en)
FR (1) FR2404303A1 (en)
GB (1) GB2005074A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692993A (en) * 1978-12-05 1987-09-15 Clark Marion D Schottky barrier charge coupled device (CCD) manufacture
GB2043336B (en) * 1979-02-19 1983-02-09 Philips Electronic Associated Charge-coupled devices
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication
US4696533A (en) * 1981-01-12 1987-09-29 Massachusetts Institute Of Technology Spatial light modulator
GB2100511B (en) * 1981-05-15 1985-02-27 Rockwell International Corp Detector for responding to light at a predetermined wavelength and method of making the detector
JPS58103172A (en) * 1981-12-16 1983-06-20 Nec Corp Charge transfer device
US4675714A (en) * 1983-02-15 1987-06-23 Rockwell International Corporation Gapless gate charge coupled device
US4735913A (en) * 1986-05-06 1988-04-05 Bell Communications Research, Inc. Self-aligned fabrication process for GaAs MESFET devices
WO1991014284A1 (en) * 1990-03-06 1991-09-19 Unisearch Limited Schottky junction charge coupled device
AU1995092A (en) * 1991-05-10 1992-12-30 Q-Dot. Inc. High-speed peristaltic ccd imager with gaas fet output
US5138416A (en) * 1991-07-12 1992-08-11 Xerox Corporation Multi-color photosensitive element with heterojunctions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2132441A1 (en) * 1971-04-06 1972-11-17 Western Electric Co
GB1498940A (en) * 1974-10-25 1978-01-25 Nat Res Dev Semiconductor devices
DE2658526A1 (en) * 1976-12-23 1978-06-29 Siemens Ag Charge coupled transmission device for two phase operation - using layer of gallium arsenide with row of Schottky contacts

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700932A (en) * 1970-02-16 1972-10-24 Bell Telephone Labor Inc Charge coupled devices
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
JPS48101889A (en) * 1972-04-03 1973-12-21
DE2316612A1 (en) * 1972-04-03 1973-10-18 Hitachi Ltd CHARGE TRANSFER SEMICONDUCTOR DEVICES
NL181766C (en) * 1973-03-19 1987-10-16 Philips Nv LOAD-COUPLED SEMICONDUCTOR CIRCUIT, WHICH PACKAGES MAY BE TRANSFERRED FROM A SEMICONDUCTOR LAYER TO A SEMI-CONDUCTOR LAYER BY A SEMI-CONDUCTOR LAYER.
DE2400208A1 (en) * 1974-01-03 1975-07-17 Siemens Ag CHARGE-COUPLED TRANSFER ARRANGEMENTS ARE USED FOR CARGO TRANSFER MAJORITY CARRIERS
US3965481A (en) * 1974-11-22 1976-06-22 U.S. Philips Corporation Charge transfer device with J FET isolation and means to drain stray charge
US4151539A (en) * 1977-12-23 1979-04-24 The United States Of America As Represented By The Secretary Of The Air Force Junction-storage JFET bucket-brigade structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2132441A1 (en) * 1971-04-06 1972-11-17 Western Electric Co
GB1498940A (en) * 1974-10-25 1978-01-25 Nat Res Dev Semiconductor devices
DE2658526A1 (en) * 1976-12-23 1978-06-29 Siemens Ag Charge coupled transmission device for two phase operation - using layer of gallium arsenide with row of Schottky contacts

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *
EXBK/78 *

Also Published As

Publication number Publication date
US4264915A (en) 1981-04-28
DE2743245A1 (en) 1979-04-05
JPS5457869A (en) 1979-05-10
GB2005074A (en) 1979-04-11
FR2404303B1 (en) 1983-08-19

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Legal Events

Date Code Title Description
ST Notification of lapse