GB1498940A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1498940A
GB1498940A GB5059573A GB5059573A GB1498940A GB 1498940 A GB1498940 A GB 1498940A GB 5059573 A GB5059573 A GB 5059573A GB 5059573 A GB5059573 A GB 5059573A GB 1498940 A GB1498940 A GB 1498940A
Authority
GB
United Kingdom
Prior art keywords
layer
grooves
alternate
substrate
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5059573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB5059573A priority Critical patent/GB1498940A/en
Publication of GB1498940A publication Critical patent/GB1498940A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1498940 Charge-coupled devices NATIONAL RESEARCH DEVELOPMENT CORP 25 Oct 1974 [31 Oct 1973] 50595/73 Heading H1K In a majority carrier CCD in which a first layer overlying a substrate or substrate layer is depleted throughout its thickness in operation the first layer carries a set of transfer electrodes alternate ones of which are situated in grooves or depressions in the layer and the intervening ones of which are located between the grooves or depressions. In a device adapted for twophase operation, comprising an epitaxially grown or ion-implanted N type GaAs layer on a P type GaAs substrate, which may be integrated in a wafer containing FETs formed by the same technology, alternate Schottky barrier forming electrodes are disposed in undercut etched grooves running transverse to the charge transfer path and are each paired with an adjacent similar electrode located between grooves, alternate electrode pairs being connected to the two phases. Another two phase structure is described which is similar except that the layers are of silicon and the electrodes oxideinsulated from the surface of the first layer. When using GaAs the first layer may alternatively be of semi-insulating material. In all cases the transfer channel may be laterally bounded by grooves or PN junctions, and the conductivity types interchanged. Reference has been directed by the Comptroller to Specifications 1,376,639 and 1,442,464.
GB5059573A 1974-10-25 1974-10-25 Semiconductor devices Expired GB1498940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5059573A GB1498940A (en) 1974-10-25 1974-10-25 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5059573A GB1498940A (en) 1974-10-25 1974-10-25 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1498940A true GB1498940A (en) 1978-01-25

Family

ID=10456554

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5059573A Expired GB1498940A (en) 1974-10-25 1974-10-25 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1498940A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404303A1 (en) * 1977-09-26 1979-04-20 Siemens Ag DIRECT LOAD COUPLING COMPONENT

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2404303A1 (en) * 1977-09-26 1979-04-20 Siemens Ag DIRECT LOAD COUPLING COMPONENT

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee