FR2402476A1 - Procede pour preparer des couches epitaxiales en pbsxse1-x par croissance a l'equilibre - Google Patents

Procede pour preparer des couches epitaxiales en pbsxse1-x par croissance a l'equilibre

Info

Publication number
FR2402476A1
FR2402476A1 FR7815873A FR7815873A FR2402476A1 FR 2402476 A1 FR2402476 A1 FR 2402476A1 FR 7815873 A FR7815873 A FR 7815873A FR 7815873 A FR7815873 A FR 7815873A FR 2402476 A1 FR2402476 A1 FR 2402476A1
Authority
FR
France
Prior art keywords
epitaxial layers
equilibrium
pbsxse1
growth
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7815873A
Other languages
English (en)
Other versions
FR2402476B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Navy
Original Assignee
US Department of Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Navy filed Critical US Department of Navy
Publication of FR2402476A1 publication Critical patent/FR2402476A1/fr
Application granted granted Critical
Publication of FR2402476B1 publication Critical patent/FR2402476B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/063—Gp II-IV-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un procédé pour préparer des couches épitaxiales 14 simples et multiples en séléniure de plomb à phase unique (Pb)a (Sx Se 1-x )1-a , avec 0 <= x <= 1 et a = 0,500 +- 0,003, sur un support en chlorure de baryum avec maintien près de l'équilibre thermodynamique, avec sublimation simultanée de l'alliage de plomb et d'un dopant, pour former au moins une couche epitaxiale ayant des propriétés électriques et optiques prédéterminées et uniformes.
FR7815873A 1977-05-27 1978-05-26 Procede pour preparer des couches epitaxiales en pbsxse1-x par croissance a l'equilibre Expired FR2402476B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/801,431 US4154631A (en) 1977-05-27 1977-05-27 Equilibrium growth technique for preparing PbSx Se1-x epilayers

Publications (2)

Publication Number Publication Date
FR2402476A1 true FR2402476A1 (fr) 1979-04-06
FR2402476B1 FR2402476B1 (fr) 1985-03-01

Family

ID=25181074

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815873A Expired FR2402476B1 (fr) 1977-05-27 1978-05-26 Procede pour preparer des couches epitaxiales en pbsxse1-x par croissance a l'equilibre

Country Status (10)

Country Link
US (1) US4154631A (fr)
JP (1) JPS5416977A (fr)
BE (1) BE867418A (fr)
CA (1) CA1152620A (fr)
DE (1) DE2822963A1 (fr)
FR (1) FR2402476B1 (fr)
GB (3) GB1604966A (fr)
IT (1) IT1105039B (fr)
NL (1) NL7805623A (fr)
SE (1) SE438221B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2402274A1 (fr) * 1977-08-29 1979-03-30 Rca Corp Milieu d'enregistrement optique d'informations, destine a etre utilise avec un faisceau laser d'enregistrement
FR2557562A1 (fr) * 1983-12-29 1985-07-05 Menn Roger Procede de fabrication de couches non conductrices a variation de composition atomique

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227948A (en) * 1977-12-27 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Growth technique for preparing graded gap semiconductors and devices
US4263604A (en) * 1977-12-27 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Graded gap semiconductor detector
US4371232A (en) * 1977-12-27 1983-02-01 The United States Of America As Represented By The Secretary Of The Navy Graded gap semiconductor optical device
US4330932A (en) * 1978-07-20 1982-05-25 The United States Of America As Represented By The Secretary Of The Navy Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
JPS60251195A (ja) * 1984-05-26 1985-12-11 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4743949A (en) * 1984-07-10 1988-05-10 Hans Zogg Infrared optical-electronic device
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
KR880010481A (ko) * 1987-02-21 1988-10-10 강진구 액상 박막 결정 성장방법 및 장치
KR910006093B1 (ko) * 1988-06-30 1991-08-12 삼성전자 주식회사 반도체 장치의 제조방법
US4853339A (en) * 1988-07-27 1989-08-01 The United States Of America As Represented By The Secretary Of The Navy Method of sensitizing Pb-salt epitaxial films for schottky diodes
US4900373A (en) * 1988-07-27 1990-02-13 The United States Of America As Represented By The Secretary Of The Navy Sensitization pretreatment of Pb-salt epitaxial films for schottky diodes by sulfur vapor exposure
US4870027A (en) * 1988-07-27 1989-09-26 The United States Of America As Represented By The Secretary Of The Navy Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure
AU4695096A (en) * 1995-01-06 1996-07-24 National Aeronautics And Space Administration - Nasa Minority carrier device
JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
JP4509433B2 (ja) * 2001-07-12 2010-07-21 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
EA200701428A1 (ru) * 2007-06-11 2008-02-28 Ариф Мирджалалович Пашаев СПОСОБ РЕГУЛИРОВАНИЯ КОНЦЕНТРАЦИИ НОСИТЕЛЕЙ ЗАРЯДА В ЭПИТАКСИАЛЬНЫХ СЛОЯХ PbSnSe
US8778081B2 (en) 2012-01-04 2014-07-15 Colorado State University Research Foundation Process and hardware for deposition of complex thin-film alloys over large areas
US10109754B2 (en) 2012-12-13 2018-10-23 The Board Of Regents Of The University Of Oklahoma Photovoltaic lead-salt detectors
WO2015047492A2 (fr) * 2013-06-20 2015-04-02 The Board Of Regents Of The University Of Oklahoma Détecteurs photovoltaïques à sel de plomb
US9887309B2 (en) 2012-12-13 2018-02-06 The Board of Regents of the University of Okalahoma Photovoltaic lead-salt semiconductor detectors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295195B (de) * 1961-12-26 1969-05-14 Minnesota Mining & Mfg Thermoelektrisches Halbleitermaterial
US3716424A (en) * 1970-04-02 1973-02-13 Us Navy Method of preparation of lead sulfide pn junction diodes
US3793070A (en) * 1971-06-01 1974-02-19 Us Navy Method of varying the carrier concentration of lead-tin sulfide epitaxial films
US3961998A (en) * 1975-04-09 1976-06-08 The United States Of America As Represented By The Secretary Of The Navy Vacuum deposition method for fabricating an epitaxial pbsnte rectifying metal semiconductor contact photodetector
US4063974A (en) * 1975-11-14 1977-12-20 Hughes Aircraft Company Planar reactive evaporation method for the deposition of compound semiconducting films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2402274A1 (fr) * 1977-08-29 1979-03-30 Rca Corp Milieu d'enregistrement optique d'informations, destine a etre utilise avec un faisceau laser d'enregistrement
FR2557562A1 (fr) * 1983-12-29 1985-07-05 Menn Roger Procede de fabrication de couches non conductrices a variation de composition atomique

Also Published As

Publication number Publication date
SE438221B (sv) 1985-04-01
IT1105039B (it) 1985-10-28
IT7849585A0 (it) 1978-05-29
NL7805623A (nl) 1978-11-29
SE7805652L (sv) 1978-11-28
US4154631A (en) 1979-05-15
GB1604967A (en) 1981-12-16
BE867418A (fr) 1978-09-18
DE2822963A1 (de) 1978-11-30
GB1604966A (en) 1981-12-16
FR2402476B1 (fr) 1985-03-01
GB1604965A (en) 1981-12-16
CA1152620A (fr) 1983-08-23
JPS5416977A (en) 1979-02-07

Similar Documents

Publication Publication Date Title
FR2402476A1 (fr) Procede pour preparer des couches epitaxiales en pbsxse1-x par croissance a l&#39;equilibre
GB1319893A (en) Apparatus for growing crystalline bodies from the melt
FR2339423A1 (fr) Evaporateur a surface mince, en particulier pour produits a haute temperature d&#39;ebullition
FR2369685A1 (fr) Procede de production de couches de silicium cristallin sur un substrat et produits ainsi obtenus
FR2413125A1 (fr) Procede pour former des couches epitaxiales et dispositifs et detecteurs optiques obtenus par ce procede
GB1452546A (en) Growing epitaxial layers
IT7822029A0 (it) 1,2,3-tiadiazol-3-in-5-iliden-uree, procedimento per preparare tali composti nonche&#39; mezzi che licontengono con azione regolatrice della crescita per piante.
GB1336672A (en) Methods of epitaxially depositing a semiconductor compound
CH557877A (fr) Procede de regulation de la croissance de cultures de microorganismes.
EP0316021A3 (fr) Structures multicouches de monocristal dopé et non dopé
JPS538374A (en) Growing method for single crystal of semiconductor
FE Recovery and grain growth of gold thin film deposited on the cold substrate
FR2431535A1 (fr) Nouvelle glucoamylase neutre et son procede de production
JPS5481180A (en) Growth of single crystal
US2420955A (en) Method of making optical bodies
FR2361304A1 (fr) Procede de depot de silicium polycristallin
JPS5316400A (en) Production of piezoelectric oxide single crystal
GB1381417A (en) Method of securing articles
JPS5285080A (en) Growing of laterally drawn ribbon single crystal
JPS52120300A (en) Gap single crystal gap making apparatus
JPS5362787A (en) Method of continuously manufacturing monocrystalline ribbon by horizontal growth
GB1432240A (en) Method for the vapour-phase growth of single crystals
GB1332348A (en) Silicon carbide junction diode
JPS5796520A (en) Method for forming silicon single crystal film
Koyama X-Ray Studies on Substructures in Single Crystals of Tin.(II): Substructures of Tin as Related to its Purity

Legal Events

Date Code Title Description
ST Notification of lapse