FR2392793A1 - Procede pour decouper des barreaux faits dans un materiau monocristallin - Google Patents

Procede pour decouper des barreaux faits dans un materiau monocristallin

Info

Publication number
FR2392793A1
FR2392793A1 FR7813285A FR7813285A FR2392793A1 FR 2392793 A1 FR2392793 A1 FR 2392793A1 FR 7813285 A FR7813285 A FR 7813285A FR 7813285 A FR7813285 A FR 7813285A FR 2392793 A1 FR2392793 A1 FR 2392793A1
Authority
FR
France
Prior art keywords
cutting
monocristalline
bars made
cutting bars
bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7813285A
Other languages
English (en)
French (fr)
Other versions
FR2392793B1 (US20030204162A1-20031030-M00001.png
Inventor
Johannes Grandia
John C Hill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2392793A1 publication Critical patent/FR2392793A1/fr
Application granted granted Critical
Publication of FR2392793B1 publication Critical patent/FR2392793B1/fr
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Thin Magnetic Films (AREA)
FR7813285A 1977-06-03 1978-04-27 Procede pour decouper des barreaux faits dans un materiau monocristallin Granted FR2392793A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/803,082 US4084354A (en) 1977-06-03 1977-06-03 Process for slicing boules of single crystal material

Publications (2)

Publication Number Publication Date
FR2392793A1 true FR2392793A1 (fr) 1978-12-29
FR2392793B1 FR2392793B1 (US20030204162A1-20031030-M00001.png) 1982-05-14

Family

ID=25185528

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7813285A Granted FR2392793A1 (fr) 1977-06-03 1978-04-27 Procede pour decouper des barreaux faits dans un materiau monocristallin

Country Status (12)

Country Link
US (1) US4084354A (US20030204162A1-20031030-M00001.png)
JP (1) JPS542585A (US20030204162A1-20031030-M00001.png)
AU (1) AU516065B2 (US20030204162A1-20031030-M00001.png)
BR (1) BR7803511A (US20030204162A1-20031030-M00001.png)
CA (1) CA1084172A (US20030204162A1-20031030-M00001.png)
CH (1) CH633744A5 (US20030204162A1-20031030-M00001.png)
DE (1) DE2819420A1 (US20030204162A1-20031030-M00001.png)
FR (1) FR2392793A1 (US20030204162A1-20031030-M00001.png)
GB (1) GB1555299A (US20030204162A1-20031030-M00001.png)
IT (1) IT1111182B (US20030204162A1-20031030-M00001.png)
NL (1) NL7804265A (US20030204162A1-20031030-M00001.png)
SE (1) SE429313B (US20030204162A1-20031030-M00001.png)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344260A (en) * 1979-07-13 1982-08-17 Nagano Electronics Industrial Co., Ltd. Method for precision shaping of wafer materials
JPS56105638A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of circular gallium arsenide wafer
DE3036829A1 (de) * 1980-09-30 1982-05-13 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum aufnehmen von kristallscheiben
JPS6213305A (ja) * 1985-07-12 1987-01-22 株式会社日立製作所 ワ−ク回転式切断法およびその装置
JPS6296400A (ja) * 1985-10-23 1987-05-02 Mitsubishi Metal Corp ウエハの製造方法
DE3716943A1 (de) * 1987-05-20 1988-12-08 Hans J Scheel Verfahren und vorrichtung zum trennen von insbesondere stabfoermigem material
EP0534499A3 (en) * 1987-10-29 1993-04-21 Tokyo Seimitsu Co.,Ltd. Method for slicing a wafer
US5111622A (en) * 1989-05-18 1992-05-12 Silicon Technology Corporation Slicing and grinding system for a wafer slicing machine
US5095664A (en) * 1990-01-30 1992-03-17 Massachusetts Institute Of Technology Optical surface polishing method
JP3060445B2 (ja) * 1992-07-16 2000-07-10 株式会社東京精密 半導体ウエハのスライシング方法及びその装置
JP2903916B2 (ja) * 1992-11-30 1999-06-14 信越半導体株式会社 半導体インゴット加工方法
EP0604061A1 (en) * 1992-12-24 1994-06-29 AT&T Corp. Semiconductor fabrication
JP2789983B2 (ja) * 1993-01-28 1998-08-27 信越半導体株式会社 加工誤差補正装置
CH690845A5 (de) * 1994-05-19 2001-02-15 Tokyo Seimitsu Co Ltd Verfahren zum Positionieren eines Werkstücks und Vorrichtung hierfür.
CZ283541B6 (cs) * 1996-03-06 1998-04-15 Trimex Tesla, S.R.O. Způsob řezání ingotů z tvrdých materiálů na desky a pila k provádění tohoto způsobu
JP3213563B2 (ja) * 1997-03-11 2001-10-02 株式会社スーパーシリコン研究所 ノッチレスウェーハの製造方法
US7007855B1 (en) * 2000-03-17 2006-03-07 International Business Machines Corporation Wafer identification mark
DE10019601B4 (de) 2000-04-20 2006-09-14 Wacker Chemie Ag Verfahren zur Herstellung eines polykristallinen Siliciumstabes
US7637801B2 (en) * 2000-09-28 2009-12-29 Sharp Kabushiki Kaisha Method of making solar cell
JP3649393B2 (ja) * 2000-09-28 2005-05-18 シャープ株式会社 シリコンウエハの加工方法、シリコンウエハおよびシリコンブロック
DE10103592B4 (de) * 2001-01-26 2006-07-13 Ernst Spielvogel Säge zum Zerteilen von Materialien in dünne Scheiben, insbesondere zum Zerteilen von Wafern aus Silizium
DE112004001024T5 (de) * 2003-06-10 2006-06-01 Ade Corp., Westwood Verfahren und System zur Klassifizierung von an einer Oberfläche eines Substrats auftretenden Defekten unter Verwendung einer grafischen Darstellung von Vielkanal-Daten
WO2010138764A2 (en) * 2009-05-29 2010-12-02 Applied Materials, Inc. Substrate side marking and identification
CN108523329A (zh) * 2018-02-07 2018-09-14 上海黛恩妠珠宝有限公司 一种碳硅石圆钻
CN111775354B (zh) * 2020-06-19 2021-10-01 山东省科学院新材料研究所 一种钽铌酸钾单晶基片元件的加工制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1427716A1 (de) * 1964-01-20 1969-01-16 Halbleiterwerk Frankfurt Oder Verfahren und Vorrichtung zum Abtrennen duenner Kristallscheiben aus Halbleitermaterial von Einkristallstaeben
DE1752443A1 (de) * 1968-05-27 1971-05-27 Helmut Willems Innenlochsaege
DE2328543A1 (de) * 1972-06-05 1974-01-03 Hitachi Ltd Vorrichtung zum schneiden eines kristalls in einer seiner kristallebenen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL105904C (US20030204162A1-20031030-M00001.png) * 1955-12-30
DE1145989B (de) * 1959-10-29 1963-03-21 Intermetall Vorrichtung zum Saegen von kleinen stabfoermigen Objekten, insbesondere Halbleiter-Einkristallen
US3039235A (en) * 1961-01-31 1962-06-19 Hamco Mach & Elect Co Cutting apparatus
US3626644A (en) * 1969-07-17 1971-12-14 John A Cupler Method of making solid diamond drills
US3662733A (en) * 1969-10-12 1972-05-16 Yoji Hattori Annular cutting apparatus with work removal means
JPS5243189A (en) * 1975-10-03 1977-04-04 Hitachi Ltd Method for cutting crystal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1427716A1 (de) * 1964-01-20 1969-01-16 Halbleiterwerk Frankfurt Oder Verfahren und Vorrichtung zum Abtrennen duenner Kristallscheiben aus Halbleitermaterial von Einkristallstaeben
DE1752443A1 (de) * 1968-05-27 1971-05-27 Helmut Willems Innenlochsaege
DE2328543A1 (de) * 1972-06-05 1974-01-03 Hitachi Ltd Vorrichtung zum schneiden eines kristalls in einer seiner kristallebenen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/78 *

Also Published As

Publication number Publication date
DE2819420C2 (US20030204162A1-20031030-M00001.png) 1987-05-14
BR7803511A (pt) 1979-04-24
GB1555299A (en) 1979-11-07
CH633744A5 (de) 1982-12-31
SE429313B (sv) 1983-08-29
IT7823831A0 (it) 1978-05-26
FR2392793B1 (US20030204162A1-20031030-M00001.png) 1982-05-14
AU516065B2 (en) 1981-05-14
US4084354A (en) 1978-04-18
SE7805925L (sv) 1978-12-04
CA1084172A (en) 1980-08-19
NL7804265A (nl) 1978-12-05
IT1111182B (it) 1986-01-13
JPS6159889B2 (US20030204162A1-20031030-M00001.png) 1986-12-18
DE2819420A1 (de) 1978-12-14
AU3483178A (en) 1979-10-11
JPS542585A (en) 1979-01-10

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