FR2374725A1 - Circuit de reference de rechargement pour une memoire a semi-conducteurs - Google Patents
Circuit de reference de rechargement pour une memoire a semi-conducteursInfo
- Publication number
- FR2374725A1 FR2374725A1 FR7733079A FR7733079A FR2374725A1 FR 2374725 A1 FR2374725 A1 FR 2374725A1 FR 7733079 A FR7733079 A FR 7733079A FR 7733079 A FR7733079 A FR 7733079A FR 2374725 A1 FR2374725 A1 FR 2374725A1
- Authority
- FR
- France
- Prior art keywords
- reference circuit
- semiconductor memory
- circuit
- bit lines
- reload
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 210000004027 cell Anatomy 0.000 abstract 1
- 230000015654 memory Effects 0.000 abstract 1
- 210000000352 storage cell Anatomy 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2657561A DE2657561B1 (de) | 1976-12-18 | 1976-12-18 | Nachlade-Referenzschaltungsanordnung fuer einen Halbleiterspeicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2374725A1 true FR2374725A1 (fr) | 1978-07-13 |
| FR2374725B1 FR2374725B1 (OSRAM) | 1979-07-20 |
Family
ID=5995929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7733079A Granted FR2374725A1 (fr) | 1976-12-18 | 1977-10-24 | Circuit de reference de rechargement pour une memoire a semi-conducteurs |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4122548A (OSRAM) |
| JP (1) | JPS5391636A (OSRAM) |
| DE (1) | DE2657561B1 (OSRAM) |
| FR (1) | FR2374725A1 (OSRAM) |
| GB (1) | GB1550969A (OSRAM) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2855866C3 (de) * | 1978-12-22 | 1981-10-29 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers |
| US4340943A (en) * | 1979-05-31 | 1982-07-20 | Tokyo Shibaura Denki Kabushiki Kaisha | Memory device utilizing MOS FETs |
| DE2926094A1 (de) * | 1979-06-28 | 1981-01-08 | Ibm Deutschland | Verfahren und schaltungsanordnung zum entladen von bitleitungskapazitaeten eines integrierten halbleiterspeichers |
| DE2929384C2 (de) * | 1979-07-20 | 1981-07-30 | Ibm Deutschland Gmbh, 7000 Stuttgart | Nachladeschaltung für einen Halbleiterspeicher |
| DE2943565C2 (de) * | 1979-10-29 | 1981-11-12 | Ibm Deutschland Gmbh, 7000 Stuttgart | Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik |
| JPS5665395A (en) * | 1979-10-30 | 1981-06-03 | Fujitsu Ltd | Bit-line voltage level setting circuit |
| US4378595A (en) * | 1980-03-25 | 1983-03-29 | The Regents Of The University Of California | Synchronous multivalued latch |
| JPS60182759A (ja) * | 1984-02-29 | 1985-09-18 | Fujitsu Ltd | 論理回路 |
| US4578779A (en) * | 1984-06-25 | 1986-03-25 | International Business Machines Corporation | Voltage mode operation scheme for bipolar arrays |
| JPS61239493A (ja) * | 1985-04-05 | 1986-10-24 | Fujitsu Ltd | 半導体記憶装置 |
| WO2020257069A1 (en) * | 2019-06-17 | 2020-12-24 | Biolinq, Inc. | Mechanical coupling of an analyte-selective sensor and an infusion system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5232218B2 (OSRAM) * | 1971-09-20 | 1977-08-19 | ||
| US3909631A (en) * | 1973-08-02 | 1975-09-30 | Texas Instruments Inc | Pre-charge voltage generating system |
-
1976
- 1976-12-18 DE DE2657561A patent/DE2657561B1/de active Granted
-
1977
- 1977-10-07 US US05/840,457 patent/US4122548A/en not_active Expired - Lifetime
- 1977-10-24 FR FR7733079A patent/FR2374725A1/fr active Granted
- 1977-11-21 GB GB48393/77A patent/GB1550969A/en not_active Expired
- 1977-12-09 JP JP14731577A patent/JPS5391636A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1550969A (en) | 1979-08-22 |
| US4122548A (en) | 1978-10-24 |
| JPS5391636A (en) | 1978-08-11 |
| DE2657561C2 (OSRAM) | 1978-12-07 |
| FR2374725B1 (OSRAM) | 1979-07-20 |
| DE2657561B1 (de) | 1978-04-13 |
| JPS5727555B2 (OSRAM) | 1982-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |