FR2374081A1 - Procede et dispositif de suppression des formations parasites dans la croissance de monocristaux - Google Patents

Procede et dispositif de suppression des formations parasites dans la croissance de monocristaux

Info

Publication number
FR2374081A1
FR2374081A1 FR7737672A FR7737672A FR2374081A1 FR 2374081 A1 FR2374081 A1 FR 2374081A1 FR 7737672 A FR7737672 A FR 7737672A FR 7737672 A FR7737672 A FR 7737672A FR 2374081 A1 FR2374081 A1 FR 2374081A1
Authority
FR
France
Prior art keywords
single crystals
formations
growth
removing parasitic
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7737672A
Other languages
English (en)
French (fr)
Other versions
FR2374081B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2374081A1 publication Critical patent/FR2374081A1/fr
Application granted granted Critical
Publication of FR2374081B1 publication Critical patent/FR2374081B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7737672A 1976-12-15 1977-12-14 Procede et dispositif de suppression des formations parasites dans la croissance de monocristaux Granted FR2374081A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/750,985 US4116642A (en) 1976-12-15 1976-12-15 Method and apparatus for avoiding undesirable deposits in crystal growing operations

Publications (2)

Publication Number Publication Date
FR2374081A1 true FR2374081A1 (fr) 1978-07-13
FR2374081B1 FR2374081B1 (OSRAM) 1982-01-08

Family

ID=25019967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7737672A Granted FR2374081A1 (fr) 1976-12-15 1977-12-14 Procede et dispositif de suppression des formations parasites dans la croissance de monocristaux

Country Status (6)

Country Link
US (1) US4116642A (OSRAM)
JP (1) JPS5376176A (OSRAM)
CA (1) CA1078299A (OSRAM)
DE (1) DE2755006C3 (OSRAM)
FR (1) FR2374081A1 (OSRAM)
GB (1) GB1591670A (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2842605C2 (de) * 1978-09-29 1983-12-08 Georg Dr. 8521 Langensendelbach Müller Verfahren zum Herstellen von Kristallen hoher Kristallgüte
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4478676A (en) * 1982-09-07 1984-10-23 Litton Systems, Inc. Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials
US4575401A (en) * 1984-06-07 1986-03-11 Wedtech Corp Method of and apparatus for the drawing of bars of monocrystalline silicon
USH520H (en) 1985-12-06 1988-09-06 Technique for increasing oxygen incorporation during silicon czochralski crystal growth
US4911896A (en) * 1986-07-24 1990-03-27 General Electric Company Fused quartz member for use in semiconductor manufacture
US20050274480A1 (en) * 2004-05-24 2005-12-15 Barsoum Michel W Reduction of spontaneous metal whisker formation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1515916A (fr) * 1965-09-24 1968-03-08 Siemens Ag Procédé de fabrication de cristaux semi-conducteurs en forme de tiges de diamètre uniforme
FR2013820A1 (OSRAM) * 1968-07-26 1970-04-10 Siemens Ag

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA729096A (en) * 1966-03-01 G. Herkart Paul Method of growing crystals
NL103477C (OSRAM) * 1956-11-28
NL104388C (OSRAM) * 1956-11-28
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
FR1522416A (fr) * 1967-03-14 1968-04-26 Comp Generale Electricite Perfectionnements au procédé d'obtention de cristaux par tirage
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material
JPS5836498B2 (ja) * 1976-06-09 1983-08-09 富士通株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1515916A (fr) * 1965-09-24 1968-03-08 Siemens Ag Procédé de fabrication de cristaux semi-conducteurs en forme de tiges de diamètre uniforme
FR2013820A1 (OSRAM) * 1968-07-26 1970-04-10 Siemens Ag

Also Published As

Publication number Publication date
JPS5376176A (en) 1978-07-06
DE2755006A1 (de) 1978-06-29
US4116642A (en) 1978-09-26
JPS5633359B2 (OSRAM) 1981-08-03
CA1078299A (en) 1980-05-27
FR2374081B1 (OSRAM) 1982-01-08
GB1591670A (en) 1981-06-24
DE2755006B2 (de) 1981-07-23
DE2755006C3 (de) 1982-04-29

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Legal Events

Date Code Title Description
ST Notification of lapse