JPS5515256A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPS5515256A JPS5515256A JP8859578A JP8859578A JPS5515256A JP S5515256 A JPS5515256 A JP S5515256A JP 8859578 A JP8859578 A JP 8859578A JP 8859578 A JP8859578 A JP 8859578A JP S5515256 A JPS5515256 A JP S5515256A
- Authority
- JP
- Japan
- Prior art keywords
- supporter
- reinforcement plate
- alloy
- ray mask
- major face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To obtain a X-ray mask stable and resistent against a mechanical shock by providing in the major face of a supporter a reinforcement plate for raising its mechanical strength.
CONSTITUTION: A reinforcement plate 4 is made up of a metal having a heat expansion coefficient very close to a Si single crystal or a crystal glass, it is attached to a major face opposed to themajor face in which a thin film 1 of a supporter 2 is mounted, to reinforce the mechanical strength of the supporter 2. An opening is given to the reinforcement plate 4 corresponding to a second major face of the thin film 1 having an absorption layer mounted thereon, to attach 5 the supporter 2. The reinforcement plate 4 is made of a Fe-Ni alloy or a Fe-Ni-Co alloy, or by adding a small amount of Mn. For example, a thermal expansion rate for the reinforcement plate and supporter can be set at a same level by controlling a Ni contained amount of a Fe-Ni alloy, and also a desirable tension can be obtained by sustaining a difference between the heat expansion rates for them. According to such a construction, a X-ray mask can be protected from the damage against a mechanical shock.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8859578A JPS5515256A (en) | 1978-07-19 | 1978-07-19 | X-ray mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8859578A JPS5515256A (en) | 1978-07-19 | 1978-07-19 | X-ray mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5515256A true JPS5515256A (en) | 1980-02-02 |
Family
ID=13947173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8859578A Pending JPS5515256A (en) | 1978-07-19 | 1978-07-19 | X-ray mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5515256A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6265721A (en) * | 1985-05-08 | 1987-03-25 | Nippon Shokubai Kagaku Kogyo Co Ltd | Method for purifying waste gas |
US4708919A (en) * | 1985-08-02 | 1987-11-24 | Micronix Corporation | Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure |
JPH02293049A (en) * | 1989-05-01 | 1990-12-04 | Toyota Central Res & Dev Lab Inc | Catalyst for purification of exhaust gas |
US5034971A (en) * | 1989-01-31 | 1991-07-23 | Yamaha Corporation | Mask for X-ray lithography |
US5199055A (en) * | 1991-08-05 | 1993-03-30 | Shin-Etsu Chemical Co., Ltd. | X-ray lithographic mask blank with reinforcement |
WO2004051370A1 (en) * | 2002-12-03 | 2004-06-17 | Dai Nippon Printing Co., Ltd. | Transfer mask blank, transfer mask, and transfer method using the transfer mask |
-
1978
- 1978-07-19 JP JP8859578A patent/JPS5515256A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6265721A (en) * | 1985-05-08 | 1987-03-25 | Nippon Shokubai Kagaku Kogyo Co Ltd | Method for purifying waste gas |
JPH0587291B2 (en) * | 1985-05-08 | 1993-12-16 | Nippon Catalytic Chem Ind | |
US4708919A (en) * | 1985-08-02 | 1987-11-24 | Micronix Corporation | Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure |
US5034971A (en) * | 1989-01-31 | 1991-07-23 | Yamaha Corporation | Mask for X-ray lithography |
JPH02293049A (en) * | 1989-05-01 | 1990-12-04 | Toyota Central Res & Dev Lab Inc | Catalyst for purification of exhaust gas |
US5199055A (en) * | 1991-08-05 | 1993-03-30 | Shin-Etsu Chemical Co., Ltd. | X-ray lithographic mask blank with reinforcement |
WO2004051370A1 (en) * | 2002-12-03 | 2004-06-17 | Dai Nippon Printing Co., Ltd. | Transfer mask blank, transfer mask, and transfer method using the transfer mask |
US7582393B2 (en) | 2002-12-03 | 2009-09-01 | Dai Nippon Printing Co., Ltd. | Transfer mask blank, transfer mask, and transfer method using the transfer mask |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56142630A (en) | Manufacture of semiconductor device | |
JPS5515256A (en) | X-ray mask | |
JPS5524720A (en) | Solder for hard-to-solder material | |
JPS5393794A (en) | Hermetic sealing method of crystal vibrator | |
JPS5670520A (en) | Frame for spectacles | |
JPS53105366A (en) | Manufacture for semiconductor element substrate | |
JPS53144695A (en) | Semiconductor laser device | |
JPS53130974A (en) | Manufacture for silicon thin film | |
JPS5369584A (en) | Semiconductor device | |
JPS5387177A (en) | Souble layer structure mask | |
JPS6461042A (en) | Low thermal expansion material for lead frame | |
JPS5330274A (en) | Semiconductor device | |
JPS5728415A (en) | Electrode film construction of quartz oscillator | |
JPS5723668A (en) | Adhesion method | |
JPS5352997A (en) | Thin film type heating resistor body | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS544567A (en) | Growing apparatus of ion beam crystal | |
JPS5331974A (en) | Mask for exposure | |
JPS53119694A (en) | Semiconductor pressure transducer | |
JPS5245270A (en) | Semiconductor device | |
JPS5360177A (en) | Photo mask | |
JPS5591844A (en) | Electronic parts package | |
JPS5399881A (en) | Manufacture of dielectric separation substrate | |
JPS52106680A (en) | Surface stabilized semiconductor element | |
JPS52116075A (en) | Preparation of film for protecting surface of electronic parts |