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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP149277ApriorityCriticalpatent/JPS5387177A/en
Publication of JPS5387177ApublicationCriticalpatent/JPS5387177A/en
PURPOSE: To prevent the occurrence of dislocation within a substrate by the stress of a Si3N4 mask by inserting a SiO2 film between the Si substrate and the Si3N4 mask.