FR2365859A1 - Memoire non volatile pour signaux rapides - Google Patents

Memoire non volatile pour signaux rapides

Info

Publication number
FR2365859A1
FR2365859A1 FR7628766A FR7628766A FR2365859A1 FR 2365859 A1 FR2365859 A1 FR 2365859A1 FR 7628766 A FR7628766 A FR 7628766A FR 7628766 A FR7628766 A FR 7628766A FR 2365859 A1 FR2365859 A1 FR 2365859A1
Authority
FR
France
Prior art keywords
volatile memory
fast signals
stage
space charge
long
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7628766A
Other languages
English (en)
French (fr)
Other versions
FR2365859B1 (oth
Inventor
Alain Bert
Gerard Kantorowicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7628766A priority Critical patent/FR2365859A1/fr
Priority to US05/835,009 priority patent/US4122543A/en
Priority to GB39432/77A priority patent/GB1592675A/en
Priority to DE2742935A priority patent/DE2742935C3/de
Publication of FR2365859A1 publication Critical patent/FR2365859A1/fr
Application granted granted Critical
Publication of FR2365859B1 publication Critical patent/FR2365859B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/005—Arrangements for selecting an address in a digital store with travelling wave access

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
FR7628766A 1976-09-24 1976-09-24 Memoire non volatile pour signaux rapides Granted FR2365859A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7628766A FR2365859A1 (fr) 1976-09-24 1976-09-24 Memoire non volatile pour signaux rapides
US05/835,009 US4122543A (en) 1976-09-24 1977-09-20 Non-volatile memory for fast signals
GB39432/77A GB1592675A (en) 1976-09-24 1977-09-21 Non-volatile memory for analogue signals
DE2742935A DE2742935C3 (de) 1976-09-24 1977-09-23 Nichtflüchtiger Langzeitspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7628766A FR2365859A1 (fr) 1976-09-24 1976-09-24 Memoire non volatile pour signaux rapides

Publications (2)

Publication Number Publication Date
FR2365859A1 true FR2365859A1 (fr) 1978-04-21
FR2365859B1 FR2365859B1 (oth) 1979-01-12

Family

ID=9178048

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7628766A Granted FR2365859A1 (fr) 1976-09-24 1976-09-24 Memoire non volatile pour signaux rapides

Country Status (4)

Country Link
US (1) US4122543A (oth)
DE (1) DE2742935C3 (oth)
FR (1) FR2365859A1 (oth)
GB (1) GB1592675A (oth)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246502A (en) * 1978-08-16 1981-01-20 Mitel Corporation Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom
DE2844878A1 (de) * 1978-10-14 1980-04-30 Itt Ind Gmbh Deutsche Integrierbarer isolierschicht-feldeffekttransistor
US4314265A (en) * 1979-01-24 1982-02-02 Xicor, Inc. Dense nonvolatile electrically-alterable memory devices with four layer electrodes
DE2918888C2 (de) * 1979-05-10 1984-10-18 Siemens AG, 1000 Berlin und 8000 München MNOS-Speicherzelle und Verfahren zu ihrem Betrieb sowie zu ihrer Herstellung
US4247916A (en) * 1979-10-30 1981-01-27 Erb Darrell M Memory device in which one type carrier stored during write controls the flow of the other type carrier during read
DE3312094A1 (de) * 1983-04-02 1984-10-11 Licentia Patent-Verwaltungs-Gmbh Zentralelektronik
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer
EP0977267B1 (en) * 1998-07-30 2007-07-04 STMicroelectronics S.r.l. Non volatile memory structure and corresponding manufacturing process
KR101192358B1 (ko) * 2007-07-31 2012-10-18 삼성전자주식회사 불휘발성 메모리 장치 및 프로그래밍 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
GB1592675A (en) 1981-07-08
US4122543A (en) 1978-10-24
DE2742935C3 (de) 1980-11-06
DE2742935A1 (de) 1978-03-30
FR2365859B1 (oth) 1979-01-12
DE2742935B2 (de) 1980-03-06

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Legal Events

Date Code Title Description
ST Notification of lapse