FR2363896A2 - Dispositif semi-conducteur monolithique comprenant un pont de redressement - Google Patents

Dispositif semi-conducteur monolithique comprenant un pont de redressement

Info

Publication number
FR2363896A2
FR2363896A2 FR7626408A FR7626408A FR2363896A2 FR 2363896 A2 FR2363896 A2 FR 2363896A2 FR 7626408 A FR7626408 A FR 7626408A FR 7626408 A FR7626408 A FR 7626408A FR 2363896 A2 FR2363896 A2 FR 2363896A2
Authority
FR
France
Prior art keywords
integrated circuit
monolithic semiconductor
layer structure
semiconductor integrated
circuit chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626408A
Other languages
English (en)
French (fr)
Other versions
FR2363896B2 (cs
Inventor
Maurice Bonis
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7626408A priority Critical patent/FR2363896A2/fr
Publication of FR2363896A2 publication Critical patent/FR2363896A2/fr
Application granted granted Critical
Publication of FR2363896B2 publication Critical patent/FR2363896B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Thyristors (AREA)
  • Amplifiers (AREA)
FR7626408A 1976-09-01 1976-09-01 Dispositif semi-conducteur monolithique comprenant un pont de redressement Granted FR2363896A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7626408A FR2363896A2 (fr) 1976-09-01 1976-09-01 Dispositif semi-conducteur monolithique comprenant un pont de redressement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7626408A FR2363896A2 (fr) 1976-09-01 1976-09-01 Dispositif semi-conducteur monolithique comprenant un pont de redressement

Publications (2)

Publication Number Publication Date
FR2363896A2 true FR2363896A2 (fr) 1978-03-31
FR2363896B2 FR2363896B2 (cs) 1980-07-18

Family

ID=9177315

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626408A Granted FR2363896A2 (fr) 1976-09-01 1976-09-01 Dispositif semi-conducteur monolithique comprenant un pont de redressement

Country Status (1)

Country Link
FR (1) FR2363896A2 (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
CN104538397A (zh) * 2014-12-29 2015-04-22 上海华虹宏力半导体制造有限公司 桥式二极管整流器及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
CN104538397A (zh) * 2014-12-29 2015-04-22 上海华虹宏力半导体制造有限公司 桥式二极管整流器及其制造方法

Also Published As

Publication number Publication date
FR2363896B2 (cs) 1980-07-18

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