FR2363896B2 - - Google Patents
Info
- Publication number
- FR2363896B2 FR2363896B2 FR7626408A FR7626408A FR2363896B2 FR 2363896 B2 FR2363896 B2 FR 2363896B2 FR 7626408 A FR7626408 A FR 7626408A FR 7626408 A FR7626408 A FR 7626408A FR 2363896 B2 FR2363896 B2 FR 2363896B2
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7626408A FR2363896A2 (fr) | 1976-09-01 | 1976-09-01 | Dispositif semi-conducteur monolithique comprenant un pont de redressement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7626408A FR2363896A2 (fr) | 1976-09-01 | 1976-09-01 | Dispositif semi-conducteur monolithique comprenant un pont de redressement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2363896A2 FR2363896A2 (fr) | 1978-03-31 |
| FR2363896B2 true FR2363896B2 (cs) | 1980-07-18 |
Family
ID=9177315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7626408A Granted FR2363896A2 (fr) | 1976-09-01 | 1976-09-01 | Dispositif semi-conducteur monolithique comprenant un pont de redressement |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2363896A2 (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2469804A1 (fr) * | 1979-11-07 | 1981-05-22 | Labo Electronique Physique | Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant |
| CN104538397A (zh) * | 2014-12-29 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | 桥式二极管整流器及其制造方法 |
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1976
- 1976-09-01 FR FR7626408A patent/FR2363896A2/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2363896A2 (fr) | 1978-03-31 |