FR2363896A2 - Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier - Google Patents

Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier

Info

Publication number
FR2363896A2
FR2363896A2 FR7626408A FR7626408A FR2363896A2 FR 2363896 A2 FR2363896 A2 FR 2363896A2 FR 7626408 A FR7626408 A FR 7626408A FR 7626408 A FR7626408 A FR 7626408A FR 2363896 A2 FR2363896 A2 FR 2363896A2
Authority
FR
France
Prior art keywords
output amplifier
wave rectifier
monolithic semiconductor
integrated circuit
layer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626408A
Other languages
French (fr)
Other versions
FR2363896B2 (en
Inventor
Maurice Bonis
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7626408A priority Critical patent/FR2363896A2/en
Publication of FR2363896A2 publication Critical patent/FR2363896A2/en
Application granted granted Critical
Publication of FR2363896B2 publication Critical patent/FR2363896B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Thyristors (AREA)

Abstract

The monolithic semiconductor consists of a full wave rectifier and an output amplifier integrated onto the same chip. A thin layer of the same conduction type as the epitaxial layer but more heavily doped is formed locally beneath those parts of the epitaxial layer forming the diodes in the second branch of the rectifier. The thin layer is connected to a conductor on the surface by a first zone of the same conduction type and heavily doped. The first epitaxial layer of the opposite conduction type to that of the substrate is connected to the same surface conductor by a second zone of the opposite conduction type and heavily doped.
FR7626408A 1976-09-01 1976-09-01 Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier Granted FR2363896A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7626408A FR2363896A2 (en) 1976-09-01 1976-09-01 Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7626408A FR2363896A2 (en) 1976-09-01 1976-09-01 Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier

Publications (2)

Publication Number Publication Date
FR2363896A2 true FR2363896A2 (en) 1978-03-31
FR2363896B2 FR2363896B2 (en) 1980-07-18

Family

ID=9177315

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626408A Granted FR2363896A2 (en) 1976-09-01 1976-09-01 Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier

Country Status (1)

Country Link
FR (1) FR2363896A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469804A1 (en) * 1979-11-07 1981-05-22 Labo Electronique Physique METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIODES ASSEMBLY IN SERIES AND DEVICE RESULTING THEREFROM
CN104538397A (en) * 2014-12-29 2015-04-22 上海华虹宏力半导体制造有限公司 Bridge type diode rectifier and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469804A1 (en) * 1979-11-07 1981-05-22 Labo Electronique Physique METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIODES ASSEMBLY IN SERIES AND DEVICE RESULTING THEREFROM
CN104538397A (en) * 2014-12-29 2015-04-22 上海华虹宏力半导体制造有限公司 Bridge type diode rectifier and manufacturing method thereof

Also Published As

Publication number Publication date
FR2363896B2 (en) 1980-07-18

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