FR2376515A1 - Monolithic arrangement of two complementary transistors - improves saturation voltage of multi-epitaxial transistor structures of two opposite types - Google Patents

Monolithic arrangement of two complementary transistors - improves saturation voltage of multi-epitaxial transistor structures of two opposite types

Info

Publication number
FR2376515A1
FR2376515A1 FR7639389A FR7639389A FR2376515A1 FR 2376515 A1 FR2376515 A1 FR 2376515A1 FR 7639389 A FR7639389 A FR 7639389A FR 7639389 A FR7639389 A FR 7639389A FR 2376515 A1 FR2376515 A1 FR 2376515A1
Authority
FR
France
Prior art keywords
transistor
layer
conductivity
base
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7639389A
Other languages
French (fr)
Other versions
FR2376515B1 (en
Inventor
Maurice Bonis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7639389A priority Critical patent/FR2376515A1/en
Publication of FR2376515A1 publication Critical patent/FR2376515A1/en
Application granted granted Critical
Publication of FR2376515B1 publication Critical patent/FR2376515B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Abstract

The monolithic semiconductor arrangement includes at least two transistors of opposite type. They are formed on a plane substrate of a first type of conductivity covered by a first layer of opposite type conductivity. The substrate forms the collector of the first transistor. The base of the first transistor and the collector of the second transistor are formed from portions of the first layer. The emitter of the first and the base of the second transistor are formed from portions of a second layer of the first conductivity type situated on the first layer. The coplaner parts of the interface between the two layers forms the emitter base junction of the first transistor and base collector of the second transistor. The junctions are separated by a highly doped zone of opposite type conductivity. This zone extends from the surface of the semiconductor up to a highly doped buried plane layer of the same type of opposite conductivity. The buried layer is localised according to the same geometry as the base collector junction of the second transistor and is situated at the level of the first layer.
FR7639389A 1976-12-29 1976-12-29 Monolithic arrangement of two complementary transistors - improves saturation voltage of multi-epitaxial transistor structures of two opposite types Granted FR2376515A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7639389A FR2376515A1 (en) 1976-12-29 1976-12-29 Monolithic arrangement of two complementary transistors - improves saturation voltage of multi-epitaxial transistor structures of two opposite types

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7639389A FR2376515A1 (en) 1976-12-29 1976-12-29 Monolithic arrangement of two complementary transistors - improves saturation voltage of multi-epitaxial transistor structures of two opposite types

Publications (2)

Publication Number Publication Date
FR2376515A1 true FR2376515A1 (en) 1978-07-28
FR2376515B1 FR2376515B1 (en) 1980-11-07

Family

ID=9181661

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7639389A Granted FR2376515A1 (en) 1976-12-29 1976-12-29 Monolithic arrangement of two complementary transistors - improves saturation voltage of multi-epitaxial transistor structures of two opposite types

Country Status (1)

Country Link
FR (1) FR2376515A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261002A (en) * 1977-11-14 1981-04-07 U.S. Philips Corporation Monolithic complementary darlington

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261002A (en) * 1977-11-14 1981-04-07 U.S. Philips Corporation Monolithic complementary darlington

Also Published As

Publication number Publication date
FR2376515B1 (en) 1980-11-07

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