FR2359510A1 - Composant a semi-conducteurs comportant une couche de protection realisant une passivation - Google Patents

Composant a semi-conducteurs comportant une couche de protection realisant une passivation

Info

Publication number
FR2359510A1
FR2359510A1 FR7721891A FR7721891A FR2359510A1 FR 2359510 A1 FR2359510 A1 FR 2359510A1 FR 7721891 A FR7721891 A FR 7721891A FR 7721891 A FR7721891 A FR 7721891A FR 2359510 A1 FR2359510 A1 FR 2359510A1
Authority
FR
France
Prior art keywords
protective layer
passivation
semiconductor component
component containing
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7721891A
Other languages
English (en)
French (fr)
Other versions
FR2359510B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2359510A1 publication Critical patent/FR2359510A1/fr
Application granted granted Critical
Publication of FR2359510B1 publication Critical patent/FR2359510B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR7721891A 1976-07-20 1977-07-18 Composant a semi-conducteurs comportant une couche de protection realisant une passivation Granted FR2359510A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762632647 DE2632647A1 (de) 1976-07-20 1976-07-20 Halbleiterbauelement mit passivierender schutzschicht

Publications (2)

Publication Number Publication Date
FR2359510A1 true FR2359510A1 (fr) 1978-02-17
FR2359510B1 FR2359510B1 (de) 1982-12-31

Family

ID=5983502

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7721891A Granted FR2359510A1 (fr) 1976-07-20 1977-07-18 Composant a semi-conducteurs comportant une couche de protection realisant une passivation

Country Status (10)

Country Link
JP (1) JPS5313878A (de)
BR (1) BR7704739A (de)
CA (1) CA1101127A (de)
CH (1) CH614809A5 (de)
CS (1) CS202576B2 (de)
DE (1) DE2632647A1 (de)
FR (1) FR2359510A1 (de)
GB (1) GB1580654A (de)
IT (1) IT1076447B (de)
SE (1) SE7708385L (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000480A1 (de) * 1977-07-05 1979-02-07 Siemens Aktiengesellschaft Verfahren zum Passivieren von Halbleiterelementen durch Aufbringen einer Siliciumschicht
EP0019887A1 (de) * 1979-05-30 1980-12-10 Siemens Aktiengesellschaft Halbleiterbauelement mit passiviertem Halbleiterkörper

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH661932A5 (en) * 1978-09-18 1987-08-31 Gen Electric Process for the preparation of a coating composition for semiconductor components, this composition, and the use thereof
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
DE3021175A1 (de) * 1980-06-04 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum passivieren von siliciumbauelementen
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
FR1280466A (fr) * 1960-02-20 1961-12-29 Int Standard Electric Corp Perfectionnements aux semi-conducteurs
CH428947A (fr) * 1966-01-31 1967-01-31 Centre Electron Horloger Procédé de fabrication d'un circuit intégré
FR2290040A1 (fr) * 1974-10-26 1976-05-28 Sony Corp Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
FR1280466A (fr) * 1960-02-20 1961-12-29 Int Standard Electric Corp Perfectionnements aux semi-conducteurs
DE1185896B (de) * 1960-02-20 1965-01-21 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit p-n-UEbergaengen
CH428947A (fr) * 1966-01-31 1967-01-31 Centre Electron Horloger Procédé de fabrication d'un circuit intégré
FR2290040A1 (fr) * 1974-10-26 1976-05-28 Sony Corp Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0000480A1 (de) * 1977-07-05 1979-02-07 Siemens Aktiengesellschaft Verfahren zum Passivieren von Halbleiterelementen durch Aufbringen einer Siliciumschicht
EP0019887A1 (de) * 1979-05-30 1980-12-10 Siemens Aktiengesellschaft Halbleiterbauelement mit passiviertem Halbleiterkörper

Also Published As

Publication number Publication date
GB1580654A (en) 1980-12-03
CA1101127A (en) 1981-05-12
BR7704739A (pt) 1978-04-18
IT1076447B (it) 1985-04-27
CS202576B2 (en) 1981-01-30
CH614809A5 (en) 1979-12-14
DE2632647A1 (de) 1978-01-26
FR2359510B1 (de) 1982-12-31
JPS5313878A (en) 1978-02-07
SE7708385L (sv) 1978-01-21

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Legal Events

Date Code Title Description
ST Notification of lapse