FR2357070A1 - Procede permettant de passiver et de rendre planaire une configuration metallique - Google Patents

Procede permettant de passiver et de rendre planaire une configuration metallique

Info

Publication number
FR2357070A1
FR2357070A1 FR7717620A FR7717620A FR2357070A1 FR 2357070 A1 FR2357070 A1 FR 2357070A1 FR 7717620 A FR7717620 A FR 7717620A FR 7717620 A FR7717620 A FR 7717620A FR 2357070 A1 FR2357070 A1 FR 2357070A1
Authority
FR
France
Prior art keywords
layer
making
passiving
application
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717620A
Other languages
English (en)
French (fr)
Other versions
FR2357070B1 (OSRAM
Inventor
Gabor Paal
Klaus Schackert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2357070A1 publication Critical patent/FR2357070A1/fr
Application granted granted Critical
Publication of FR2357070B1 publication Critical patent/FR2357070B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P14/683—
    • H10P14/6342—
    • H10W20/092—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Thin Film Transistor (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
FR7717620A 1976-07-03 1977-06-03 Procede permettant de passiver et de rendre planaire une configuration metallique Granted FR2357070A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762629996 DE2629996A1 (de) 1976-07-03 1976-07-03 Verfahren zur passivierung und planarisierung eines metallisierungsmusters

Publications (2)

Publication Number Publication Date
FR2357070A1 true FR2357070A1 (fr) 1978-01-27
FR2357070B1 FR2357070B1 (OSRAM) 1980-02-08

Family

ID=5982138

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717620A Granted FR2357070A1 (fr) 1976-07-03 1977-06-03 Procede permettant de passiver et de rendre planaire une configuration metallique

Country Status (5)

Country Link
US (1) US4089766A (OSRAM)
JP (1) JPS536588A (OSRAM)
DE (1) DE2629996A1 (OSRAM)
FR (1) FR2357070A1 (OSRAM)
GB (1) GB1521950A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224039A3 (en) * 1985-10-31 1987-12-02 International Business Machines Corporation Process for making a planar trench semiconductor structure

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176029A (en) * 1978-03-02 1979-11-27 Sperry Rand Corporation Subminiature bore and conductor formation
US4263603A (en) * 1978-03-02 1981-04-21 Sperry Corporation Subminiature bore and conductor formation
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
US4564575A (en) * 1984-01-30 1986-01-14 International Business Machines Corporation Tailoring of novolak and diazoquinone positive resists by acylation of novolak
US4481070A (en) * 1984-04-04 1984-11-06 Advanced Micro Devices, Inc. Double planarization process for multilayer metallization of integrated circuit structures
US4541169A (en) * 1984-10-29 1985-09-17 International Business Machines Corporation Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
US4721689A (en) * 1986-08-28 1988-01-26 International Business Machines Corporation Method for simultaneously forming an interconnection level and via studs
US6107674A (en) * 1993-05-05 2000-08-22 Ixys Corporation Isolated multi-chip devices
US6147393A (en) * 1993-05-05 2000-11-14 Ixys Corporation Isolated multi-chip devices
DE19720974C1 (de) * 1997-05-20 1998-07-02 Deutsche Spezialglas Ag Vorsatzfilter für selbstleuchtende Bildschirme

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2547792C3 (de) * 1974-10-25 1978-08-31 Hitachi, Ltd., Tokio Verfahren zur Herstellung eines Halbleiterbauelementes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224039A3 (en) * 1985-10-31 1987-12-02 International Business Machines Corporation Process for making a planar trench semiconductor structure

Also Published As

Publication number Publication date
US4089766A (en) 1978-05-16
GB1521950A (en) 1978-08-23
JPS536588A (en) 1978-01-21
DE2629996A1 (de) 1978-01-05
FR2357070B1 (OSRAM) 1980-02-08

Similar Documents

Publication Publication Date Title
FR2357070A1 (fr) Procede permettant de passiver et de rendre planaire une configuration metallique
JPS5530846A (en) Method for manufacturing fixed memory
FR2375336A1 (fr) Procede pour la realisation par voie chimique de couches de metaux
ES450758A1 (es) Procedimiento para la fabricacion de dispositivos de memoriade semiconductores.
JPS5379383A (en) Production of semiconductor device
FR2420848A1 (fr) Procede de realisation de diodes electroluminescentes et photodetectrices
JPS54146584A (en) Manufacture of semiconductor device
GB1514949A (en) Method of fabricating stepped electrodes
JPS5772368A (en) Fusing type semiconductor device and its manufacture
FR2409598A1 (fr) Procede pour fabriquer des corps semi-conducteurs a bord profile de forme definie obtenu par attaque chimique et muni d'un revetement en verre
JPS5380A (en) Manufacture of semiconductor device
JPS53146300A (en) Production of silicon carbide substrate
JPS538076A (en) Production of mis semiconductor device
JPS57204115A (en) Manufacture of semiconductor device
JPS5441673A (en) Semiconductor device and its manufacture
JPS56135967A (en) Manufacture of semiconductor device
JPS54162463A (en) Semiconductor device and its manufacture
JPS553649A (en) Semiconductor device production
FR2325403A2 (fr) Procede de fabrication en continu de silicium polycristallin en bande sur un support solide, dispositif de mise en oeuvre et silicium ainsi obtenu
JPS5789259A (en) Semiconductor device
JPS5791537A (en) Manufacture of semiconductor device
JPS6413770A (en) Mos type transistor
JPS57173980A (en) Semiconductor device and manufacture thereof
JPS6457678A (en) Manufacture of field-effect transistor
JPS57172771A (en) Semiconductor memory device

Legal Events

Date Code Title Description
ST Notification of lapse