FR2354582A2 - Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels caches - Google Patents

Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels caches

Info

Publication number
FR2354582A2
FR2354582A2 FR7717395A FR7717395A FR2354582A2 FR 2354582 A2 FR2354582 A2 FR 2354582A2 FR 7717395 A FR7717395 A FR 7717395A FR 7717395 A FR7717395 A FR 7717395A FR 2354582 A2 FR2354582 A2 FR 2354582A2
Authority
FR
France
Prior art keywords
covers
opaque
electronic devices
ray
realizing electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717395A
Other languages
English (en)
French (fr)
Other versions
FR2354582B2 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2354582A2 publication Critical patent/FR2354582A2/fr
Application granted granted Critical
Publication of FR2354582B2 publication Critical patent/FR2354582B2/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR7717395A 1976-06-08 1977-06-07 Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels caches Granted FR2354582A2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/693,939 US4037111A (en) 1976-06-08 1976-06-08 Mask structures for X-ray lithography

Publications (2)

Publication Number Publication Date
FR2354582A2 true FR2354582A2 (fr) 1978-01-06
FR2354582B2 FR2354582B2 (enExample) 1980-02-08

Family

ID=24786757

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717395A Granted FR2354582A2 (fr) 1976-06-08 1977-06-07 Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels caches

Country Status (6)

Country Link
US (1) US4037111A (enExample)
JP (1) JPS52149979A (enExample)
CA (1) CA1092255A (enExample)
DE (1) DE2725126C2 (enExample)
FR (1) FR2354582A2 (enExample)
GB (1) GB1579468A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461282A1 (fr) * 1979-07-07 1981-01-30 Shinetsu Quartz Prod Procede ameliore de photogravure au moyen de caches de transfert, sur pastilles monocristallines

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1578259A (en) * 1977-05-11 1980-11-05 Philips Electronic Associated Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
US4131363A (en) * 1977-12-05 1978-12-26 International Business Machines Corporation Pellicle cover for projection printing system
JPS6045419B2 (ja) * 1977-12-23 1985-10-09 大日本印刷株式会社 軟ｘ線リソグラフイ−用マスクおよびその製造法
US4171240A (en) * 1978-04-26 1979-10-16 Western Electric Company, Inc. Method of removing a cured epoxy from a metal surface
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4384919A (en) * 1978-11-13 1983-05-24 Sperry Corporation Method of making x-ray masks
US4536882A (en) * 1979-01-12 1985-08-20 Rockwell International Corporation Embedded absorber X-ray mask and method for making same
JPS55148668A (en) * 1979-05-09 1980-11-19 Toshio Shioda Device for parking bicycle
US4253029A (en) * 1979-05-23 1981-02-24 Bell Telephone Laboratories, Incorporated Mask structure for x-ray lithography
US4293624A (en) * 1979-06-26 1981-10-06 The Perkin-Elmer Corporation Method for making a mask useful in X-ray lithography
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
AT371947B (de) * 1979-12-27 1983-08-10 Rudolf Sacher Ges M B H Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten
DE3006527A1 (de) * 1980-02-21 1981-08-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von trennduesen fuer die isotopentrennung in einer isotopenanreicherungsanlage
US4349621A (en) * 1981-04-13 1982-09-14 General Electric Company Process for X-ray microlithography using thin film eutectic masks
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
US4436797A (en) 1982-06-30 1984-03-13 International Business Machines Corporation X-Ray mask
US4515876A (en) * 1982-07-17 1985-05-07 Nippon Telegraph & Telephone Public Corp. X-Ray lithography mask and method for fabricating the same
US4522842A (en) * 1982-09-09 1985-06-11 At&T Bell Laboratories Boron nitride X-ray masks with controlled stress
US4465759A (en) * 1983-02-14 1984-08-14 The Perkin-Elmer Corporation Method of fabricating a pellicle cover for projection printing system
DE3421773A1 (de) * 1983-07-27 1985-02-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von masshaltigen strukturen mit hohem aspektverhaeltnis im 1 (pfeil abwaerts)/(pfeil abwaerts)um-bereich und darunter fuer die mikroelektronik und anwendung dieses verfahrens zur herstellung einer roentgenabsorbermaske
DE3435177A1 (de) * 1983-09-26 1985-04-11 Canon K.K., Tokio/Tokyo Maske fuer lithographische zwecke
US5112707A (en) * 1983-09-26 1992-05-12 Canon Kabushiki Kaisha Mask structure for lithography
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
US4579616A (en) * 1983-11-14 1986-04-01 The Perkin-Elmer Corporation Method of fabrication of an optically flat membrane
US4539695A (en) * 1984-01-06 1985-09-03 The Perkin-Elmer Corporation X-Ray lithography system
US4610020A (en) * 1984-01-06 1986-09-02 The Perkin-Elmer Corporation X-ray mask ring and apparatus for making same
US4534047A (en) * 1984-01-06 1985-08-06 The Perkin-Elmer Corporation Mask ring assembly for X-ray lithography
US4539278A (en) * 1984-03-12 1985-09-03 Eaton Corporation Mask structure for X-ray lithography and method for making same
JPS60220933A (ja) * 1984-04-18 1985-11-05 Nec Corp Ｘ線露光マスク及びその製造方法
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4608268A (en) * 1985-07-23 1986-08-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4708919A (en) * 1985-08-02 1987-11-24 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
US4873162A (en) * 1986-08-20 1989-10-10 Mitsubishi Denki Kabushiki Kaisha X-ray mask and a manufacture method therefor
JPS6351632A (ja) * 1986-08-20 1988-03-04 Mitsubishi Electric Corp Ｘ線露光用マスクとその製造方法
US5155749A (en) * 1991-03-28 1992-10-13 International Business Machines Corporation Variable magnification mask for X-ray lithography
US5146481A (en) * 1991-06-25 1992-09-08 Diwakar Garg Diamond membranes for X-ray lithography
US6541852B2 (en) 1994-07-07 2003-04-01 Tessera, Inc. Framed sheets
US6228685B1 (en) 1994-07-07 2001-05-08 Tessera, Inc. Framed sheet processing
US6368752B1 (en) * 1996-10-29 2002-04-09 Motorola, Inc. Low stress hard mask formation method during refractory radiation mask fabrication
US6217972B1 (en) 1997-10-17 2001-04-17 Tessera, Inc. Enhancements in framed sheet processing
US6162564A (en) * 1997-11-25 2000-12-19 Kabushiki Kaisha Toshiba Mask blank and method of producing mask
US5958631A (en) * 1998-02-17 1999-09-28 International Business Machines Corporation X-ray mask structure
US6258491B1 (en) 1999-07-27 2001-07-10 Etec Systems, Inc. Mask for high resolution optical lithography
US6863930B2 (en) 2002-09-06 2005-03-08 Delphi Technologies, Inc. Refractory metal mask and methods for coating an article and forming a sensor
JP4220229B2 (ja) * 2002-12-16 2009-02-04 大日本印刷株式会社 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
US3892973A (en) * 1974-02-15 1975-07-01 Bell Telephone Labor Inc Mask structure for X-ray lithography
US3925677A (en) * 1974-04-15 1975-12-09 Bell Telephone Labor Inc Platinum oxide lithographic masks
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461282A1 (fr) * 1979-07-07 1981-01-30 Shinetsu Quartz Prod Procede ameliore de photogravure au moyen de caches de transfert, sur pastilles monocristallines

Also Published As

Publication number Publication date
FR2354582B2 (enExample) 1980-02-08
CA1092255A (en) 1980-12-23
DE2725126A1 (de) 1977-12-22
US4037111A (en) 1977-07-19
GB1579468A (en) 1980-11-19
JPS52149979A (en) 1977-12-13
DE2725126C2 (de) 1985-01-31
JPS545266B2 (enExample) 1979-03-15

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