JPS52149979A - Mask structure for xxray lithography and method of manufacture thereof - Google Patents
Mask structure for xxray lithography and method of manufacture thereofInfo
- Publication number
- JPS52149979A JPS52149979A JP6681177A JP6681177A JPS52149979A JP S52149979 A JPS52149979 A JP S52149979A JP 6681177 A JP6681177 A JP 6681177A JP 6681177 A JP6681177 A JP 6681177A JP S52149979 A JPS52149979 A JP S52149979A
- Authority
- JP
- Japan
- Prior art keywords
- xxray
- lithography
- manufacture
- mask structure
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001459 lithography Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/693,939 US4037111A (en) | 1976-06-08 | 1976-06-08 | Mask structures for X-ray lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52149979A true JPS52149979A (en) | 1977-12-13 |
| JPS545266B2 JPS545266B2 (enExample) | 1979-03-15 |
Family
ID=24786757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6681177A Granted JPS52149979A (en) | 1976-06-08 | 1977-06-08 | Mask structure for xxray lithography and method of manufacture thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4037111A (enExample) |
| JP (1) | JPS52149979A (enExample) |
| CA (1) | CA1092255A (enExample) |
| DE (1) | DE2725126C2 (enExample) |
| FR (1) | FR2354582A2 (enExample) |
| GB (1) | GB1579468A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487223A (en) * | 1977-12-23 | 1979-07-11 | Dainippon Printing Co Ltd | Mask for soft x rays lithography and its preparation |
| JPS55500707A (enExample) * | 1978-09-13 | 1980-09-25 | ||
| JPS6351632A (ja) * | 1986-08-20 | 1988-03-04 | Mitsubishi Electric Corp | X線露光用マスクとその製造方法 |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1578259A (en) * | 1977-05-11 | 1980-11-05 | Philips Electronic Associated | Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby |
| US4170512A (en) * | 1977-05-26 | 1979-10-09 | Massachusetts Institute Of Technology | Method of manufacture of a soft-X-ray mask |
| US4131363A (en) * | 1977-12-05 | 1978-12-26 | International Business Machines Corporation | Pellicle cover for projection printing system |
| US4171240A (en) * | 1978-04-26 | 1979-10-16 | Western Electric Company, Inc. | Method of removing a cured epoxy from a metal surface |
| US4384919A (en) * | 1978-11-13 | 1983-05-24 | Sperry Corporation | Method of making x-ray masks |
| US4536882A (en) * | 1979-01-12 | 1985-08-20 | Rockwell International Corporation | Embedded absorber X-ray mask and method for making same |
| JPS55148668A (en) * | 1979-05-09 | 1980-11-19 | Toshio Shioda | Device for parking bicycle |
| US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
| US4293624A (en) * | 1979-06-26 | 1981-10-06 | The Perkin-Elmer Corporation | Method for making a mask useful in X-ray lithography |
| JPS5610928A (en) * | 1979-07-07 | 1981-02-03 | Shinetsu Sekiei Kk | Preparation of electronic device |
| US4301237A (en) * | 1979-07-12 | 1981-11-17 | Western Electric Co., Inc. | Method for exposing substrates to X-rays |
| US4260670A (en) * | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
| AT371947B (de) * | 1979-12-27 | 1983-08-10 | Rudolf Sacher Ges M B H | Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten |
| DE3006527A1 (de) * | 1980-02-21 | 1981-08-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von trennduesen fuer die isotopentrennung in einer isotopenanreicherungsanlage |
| US4349621A (en) * | 1981-04-13 | 1982-09-14 | General Electric Company | Process for X-ray microlithography using thin film eutectic masks |
| DE3119682A1 (de) * | 1981-05-18 | 1982-12-02 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie" |
| US4436797A (en) | 1982-06-30 | 1984-03-13 | International Business Machines Corporation | X-Ray mask |
| US4515876A (en) * | 1982-07-17 | 1985-05-07 | Nippon Telegraph & Telephone Public Corp. | X-Ray lithography mask and method for fabricating the same |
| US4522842A (en) * | 1982-09-09 | 1985-06-11 | At&T Bell Laboratories | Boron nitride X-ray masks with controlled stress |
| US4465759A (en) * | 1983-02-14 | 1984-08-14 | The Perkin-Elmer Corporation | Method of fabricating a pellicle cover for projection printing system |
| DE3421773A1 (de) * | 1983-07-27 | 1985-02-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von masshaltigen strukturen mit hohem aspektverhaeltnis im 1 (pfeil abwaerts)/(pfeil abwaerts)um-bereich und darunter fuer die mikroelektronik und anwendung dieses verfahrens zur herstellung einer roentgenabsorbermaske |
| DE3435177A1 (de) * | 1983-09-26 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Maske fuer lithographische zwecke |
| US5112707A (en) * | 1983-09-26 | 1992-05-12 | Canon Kabushiki Kaisha | Mask structure for lithography |
| DE3338717A1 (de) * | 1983-10-25 | 1985-05-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie |
| US4579616A (en) * | 1983-11-14 | 1986-04-01 | The Perkin-Elmer Corporation | Method of fabrication of an optically flat membrane |
| US4539695A (en) * | 1984-01-06 | 1985-09-03 | The Perkin-Elmer Corporation | X-Ray lithography system |
| US4610020A (en) * | 1984-01-06 | 1986-09-02 | The Perkin-Elmer Corporation | X-ray mask ring and apparatus for making same |
| US4534047A (en) * | 1984-01-06 | 1985-08-06 | The Perkin-Elmer Corporation | Mask ring assembly for X-ray lithography |
| US4539278A (en) * | 1984-03-12 | 1985-09-03 | Eaton Corporation | Mask structure for X-ray lithography and method for making same |
| JPS60220933A (ja) * | 1984-04-18 | 1985-11-05 | Nec Corp | X線露光マスク及びその製造方法 |
| US4668336A (en) * | 1985-07-23 | 1987-05-26 | Micronix Corporation | Process for making a mask used in x-ray photolithography |
| US4608268A (en) * | 1985-07-23 | 1986-08-26 | Micronix Corporation | Process for making a mask used in x-ray photolithography |
| US4708919A (en) * | 1985-08-02 | 1987-11-24 | Micronix Corporation | Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure |
| US4873162A (en) * | 1986-08-20 | 1989-10-10 | Mitsubishi Denki Kabushiki Kaisha | X-ray mask and a manufacture method therefor |
| US5155749A (en) * | 1991-03-28 | 1992-10-13 | International Business Machines Corporation | Variable magnification mask for X-ray lithography |
| US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
| US6541852B2 (en) | 1994-07-07 | 2003-04-01 | Tessera, Inc. | Framed sheets |
| US6228685B1 (en) | 1994-07-07 | 2001-05-08 | Tessera, Inc. | Framed sheet processing |
| US6368752B1 (en) * | 1996-10-29 | 2002-04-09 | Motorola, Inc. | Low stress hard mask formation method during refractory radiation mask fabrication |
| US6217972B1 (en) | 1997-10-17 | 2001-04-17 | Tessera, Inc. | Enhancements in framed sheet processing |
| US6162564A (en) * | 1997-11-25 | 2000-12-19 | Kabushiki Kaisha Toshiba | Mask blank and method of producing mask |
| US5958631A (en) * | 1998-02-17 | 1999-09-28 | International Business Machines Corporation | X-ray mask structure |
| US6258491B1 (en) | 1999-07-27 | 2001-07-10 | Etec Systems, Inc. | Mask for high resolution optical lithography |
| US6863930B2 (en) | 2002-09-06 | 2005-03-08 | Delphi Technologies, Inc. | Refractory metal mask and methods for coating an article and forming a sensor |
| JP4220229B2 (ja) * | 2002-12-16 | 2009-02-04 | 大日本印刷株式会社 | 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
| US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
| US3925677A (en) * | 1974-04-15 | 1975-12-09 | Bell Telephone Labor Inc | Platinum oxide lithographic masks |
| US3900737A (en) * | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
-
1976
- 1976-06-08 US US05/693,939 patent/US4037111A/en not_active Expired - Lifetime
-
1977
- 1977-05-13 CA CA278,371A patent/CA1092255A/en not_active Expired
- 1977-06-03 DE DE2725126A patent/DE2725126C2/de not_active Expired
- 1977-06-07 FR FR7717395A patent/FR2354582A2/fr active Granted
- 1977-06-08 GB GB24046/77A patent/GB1579468A/en not_active Expired
- 1977-06-08 JP JP6681177A patent/JPS52149979A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487223A (en) * | 1977-12-23 | 1979-07-11 | Dainippon Printing Co Ltd | Mask for soft x rays lithography and its preparation |
| JPS55500707A (enExample) * | 1978-09-13 | 1980-09-25 | ||
| JPS6351632A (ja) * | 1986-08-20 | 1988-03-04 | Mitsubishi Electric Corp | X線露光用マスクとその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2354582B2 (enExample) | 1980-02-08 |
| CA1092255A (en) | 1980-12-23 |
| DE2725126A1 (de) | 1977-12-22 |
| US4037111A (en) | 1977-07-19 |
| GB1579468A (en) | 1980-11-19 |
| DE2725126C2 (de) | 1985-01-31 |
| FR2354582A2 (fr) | 1978-01-06 |
| JPS545266B2 (enExample) | 1979-03-15 |
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