FR2354582A2 - Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels caches - Google Patents
Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels cachesInfo
- Publication number
- FR2354582A2 FR2354582A2 FR7717395A FR7717395A FR2354582A2 FR 2354582 A2 FR2354582 A2 FR 2354582A2 FR 7717395 A FR7717395 A FR 7717395A FR 7717395 A FR7717395 A FR 7717395A FR 2354582 A2 FR2354582 A2 FR 2354582A2
- Authority
- FR
- France
- Prior art keywords
- covers
- opaque
- electronic devices
- ray
- realizing electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 238000001459 lithography Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
L'invention concerne la formation de dessins de couches métalliques dans des caches pour lithographie. Elle se rapporte à la formation de couches comprenant plusieurs métaux dont les contraintes se compensent Application à la formation de dispositifs microélectroniques.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/693,939 US4037111A (en) | 1976-06-08 | 1976-06-08 | Mask structures for X-ray lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2354582A2 true FR2354582A2 (fr) | 1978-01-06 |
FR2354582B2 FR2354582B2 (fr) | 1980-02-08 |
Family
ID=24786757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7717395A Granted FR2354582A2 (fr) | 1976-06-08 | 1977-06-07 | Caches opaques aux rayons x et procede de realisation de dispositifs electroniques a l'aide de tels caches |
Country Status (6)
Country | Link |
---|---|
US (1) | US4037111A (fr) |
JP (1) | JPS52149979A (fr) |
CA (1) | CA1092255A (fr) |
DE (1) | DE2725126C2 (fr) |
FR (1) | FR2354582A2 (fr) |
GB (1) | GB1579468A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2461282A1 (fr) * | 1979-07-07 | 1981-01-30 | Shinetsu Quartz Prod | Procede ameliore de photogravure au moyen de caches de transfert, sur pastilles monocristallines |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1578259A (en) * | 1977-05-11 | 1980-11-05 | Philips Electronic Associated | Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby |
US4170512A (en) * | 1977-05-26 | 1979-10-09 | Massachusetts Institute Of Technology | Method of manufacture of a soft-X-ray mask |
US4131363A (en) * | 1977-12-05 | 1978-12-26 | International Business Machines Corporation | Pellicle cover for projection printing system |
JPS6045419B2 (ja) * | 1977-12-23 | 1985-10-09 | 大日本印刷株式会社 | 軟x線リソグラフイ−用マスクおよびその製造法 |
US4171240A (en) * | 1978-04-26 | 1979-10-16 | Western Electric Company, Inc. | Method of removing a cured epoxy from a metal surface |
US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
US4384919A (en) * | 1978-11-13 | 1983-05-24 | Sperry Corporation | Method of making x-ray masks |
US4536882A (en) * | 1979-01-12 | 1985-08-20 | Rockwell International Corporation | Embedded absorber X-ray mask and method for making same |
JPS55148668A (en) * | 1979-05-09 | 1980-11-19 | Toshio Shioda | Device for parking bicycle |
US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
US4293624A (en) * | 1979-06-26 | 1981-10-06 | The Perkin-Elmer Corporation | Method for making a mask useful in X-ray lithography |
US4260670A (en) * | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
US4301237A (en) * | 1979-07-12 | 1981-11-17 | Western Electric Co., Inc. | Method for exposing substrates to X-rays |
AT371947B (de) * | 1979-12-27 | 1983-08-10 | Rudolf Sacher Ges M B H | Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten |
DE3006527A1 (de) * | 1980-02-21 | 1981-08-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von trennduesen fuer die isotopentrennung in einer isotopenanreicherungsanlage |
US4349621A (en) * | 1981-04-13 | 1982-09-14 | General Electric Company | Process for X-ray microlithography using thin film eutectic masks |
DE3119682A1 (de) * | 1981-05-18 | 1982-12-02 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie" |
US4515876A (en) * | 1982-07-17 | 1985-05-07 | Nippon Telegraph & Telephone Public Corp. | X-Ray lithography mask and method for fabricating the same |
US4522842A (en) * | 1982-09-09 | 1985-06-11 | At&T Bell Laboratories | Boron nitride X-ray masks with controlled stress |
US4465759A (en) * | 1983-02-14 | 1984-08-14 | The Perkin-Elmer Corporation | Method of fabricating a pellicle cover for projection printing system |
DE3421773A1 (de) * | 1983-07-27 | 1985-02-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von masshaltigen strukturen mit hohem aspektverhaeltnis im 1 (pfeil abwaerts)/(pfeil abwaerts)um-bereich und darunter fuer die mikroelektronik und anwendung dieses verfahrens zur herstellung einer roentgenabsorbermaske |
DE3435177A1 (de) * | 1983-09-26 | 1985-04-11 | Canon K.K., Tokio/Tokyo | Maske fuer lithographische zwecke |
US5112707A (en) * | 1983-09-26 | 1992-05-12 | Canon Kabushiki Kaisha | Mask structure for lithography |
DE3338717A1 (de) * | 1983-10-25 | 1985-05-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie |
US4579616A (en) * | 1983-11-14 | 1986-04-01 | The Perkin-Elmer Corporation | Method of fabrication of an optically flat membrane |
US4610020A (en) * | 1984-01-06 | 1986-09-02 | The Perkin-Elmer Corporation | X-ray mask ring and apparatus for making same |
US4539695A (en) * | 1984-01-06 | 1985-09-03 | The Perkin-Elmer Corporation | X-Ray lithography system |
US4534047A (en) * | 1984-01-06 | 1985-08-06 | The Perkin-Elmer Corporation | Mask ring assembly for X-ray lithography |
US4539278A (en) * | 1984-03-12 | 1985-09-03 | Eaton Corporation | Mask structure for X-ray lithography and method for making same |
JPS60220933A (ja) * | 1984-04-18 | 1985-11-05 | Nec Corp | X線露光マスク及びその製造方法 |
US4668336A (en) * | 1985-07-23 | 1987-05-26 | Micronix Corporation | Process for making a mask used in x-ray photolithography |
US4608268A (en) * | 1985-07-23 | 1986-08-26 | Micronix Corporation | Process for making a mask used in x-ray photolithography |
US4708919A (en) * | 1985-08-02 | 1987-11-24 | Micronix Corporation | Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure |
JPS6351632A (ja) * | 1986-08-20 | 1988-03-04 | Mitsubishi Electric Corp | X線露光用マスクとその製造方法 |
US4873162A (en) * | 1986-08-20 | 1989-10-10 | Mitsubishi Denki Kabushiki Kaisha | X-ray mask and a manufacture method therefor |
US5155749A (en) * | 1991-03-28 | 1992-10-13 | International Business Machines Corporation | Variable magnification mask for X-ray lithography |
US5146481A (en) * | 1991-06-25 | 1992-09-08 | Diwakar Garg | Diamond membranes for X-ray lithography |
US6541852B2 (en) | 1994-07-07 | 2003-04-01 | Tessera, Inc. | Framed sheets |
US6228685B1 (en) | 1994-07-07 | 2001-05-08 | Tessera, Inc. | Framed sheet processing |
US6368752B1 (en) * | 1996-10-29 | 2002-04-09 | Motorola, Inc. | Low stress hard mask formation method during refractory radiation mask fabrication |
US6217972B1 (en) | 1997-10-17 | 2001-04-17 | Tessera, Inc. | Enhancements in framed sheet processing |
US6162564A (en) * | 1997-11-25 | 2000-12-19 | Kabushiki Kaisha Toshiba | Mask blank and method of producing mask |
US5958631A (en) * | 1998-02-17 | 1999-09-28 | International Business Machines Corporation | X-ray mask structure |
US6258491B1 (en) | 1999-07-27 | 2001-07-10 | Etec Systems, Inc. | Mask for high resolution optical lithography |
US6863930B2 (en) | 2002-09-06 | 2005-03-08 | Delphi Technologies, Inc. | Refractory metal mask and methods for coating an article and forming a sensor |
JP4220229B2 (ja) * | 2002-12-16 | 2009-02-04 | 大日本印刷株式会社 | 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
US3925677A (en) * | 1974-04-15 | 1975-12-09 | Bell Telephone Labor Inc | Platinum oxide lithographic masks |
US3900737A (en) * | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
-
1976
- 1976-06-08 US US05/693,939 patent/US4037111A/en not_active Expired - Lifetime
-
1977
- 1977-05-13 CA CA278,371A patent/CA1092255A/fr not_active Expired
- 1977-06-03 DE DE2725126A patent/DE2725126C2/de not_active Expired
- 1977-06-07 FR FR7717395A patent/FR2354582A2/fr active Granted
- 1977-06-08 JP JP6681177A patent/JPS52149979A/ja active Granted
- 1977-06-08 GB GB24046/77A patent/GB1579468A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2461282A1 (fr) * | 1979-07-07 | 1981-01-30 | Shinetsu Quartz Prod | Procede ameliore de photogravure au moyen de caches de transfert, sur pastilles monocristallines |
Also Published As
Publication number | Publication date |
---|---|
US4037111A (en) | 1977-07-19 |
JPS545266B2 (fr) | 1979-03-15 |
DE2725126C2 (de) | 1985-01-31 |
CA1092255A (fr) | 1980-12-23 |
GB1579468A (en) | 1980-11-19 |
JPS52149979A (en) | 1977-12-13 |
FR2354582B2 (fr) | 1980-02-08 |
DE2725126A1 (de) | 1977-12-22 |
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