FR2353137A1 - Cellule solaire a semiconducteur de forte intensite - Google Patents

Cellule solaire a semiconducteur de forte intensite

Info

Publication number
FR2353137A1
FR2353137A1 FR7716112A FR7716112A FR2353137A1 FR 2353137 A1 FR2353137 A1 FR 2353137A1 FR 7716112 A FR7716112 A FR 7716112A FR 7716112 A FR7716112 A FR 7716112A FR 2353137 A1 FR2353137 A1 FR 2353137A1
Authority
FR
France
Prior art keywords
solar cell
high intensity
semiconductor solar
intensity semiconductor
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7716112A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of FR2353137A1 publication Critical patent/FR2353137A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR7716112A 1976-05-26 1977-05-26 Cellule solaire a semiconducteur de forte intensite Pending FR2353137A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/689,989 US4110122A (en) 1976-05-26 1976-05-26 High-intensity, solid-state-solar cell device

Publications (1)

Publication Number Publication Date
FR2353137A1 true FR2353137A1 (fr) 1977-12-23

Family

ID=24770649

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7716112A Pending FR2353137A1 (fr) 1976-05-26 1977-05-26 Cellule solaire a semiconducteur de forte intensite

Country Status (6)

Country Link
US (2) US4110122A (fr)
JP (1) JPS538094A (fr)
CA (1) CA1072196A (fr)
FR (1) FR2353137A1 (fr)
IL (1) IL52160A (fr)
ZA (2) ZA772631B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2481519A1 (fr) * 1979-04-23 1981-10-30 Gen Electric Dispositif photovoltaique et procede de fabrication

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FR2426335A1 (fr) * 1978-05-19 1979-12-14 Radiotechnique Compelec Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles
US4200472A (en) * 1978-06-05 1980-04-29 The Regents Of The University Of California Solar power system and high efficiency photovoltaic cells used therein
US4255212A (en) * 1979-07-02 1981-03-10 The Regents Of The University Of California Method of fabricating photovoltaic cells
US4294510A (en) * 1979-12-10 1981-10-13 International Business Machines Corporation Semiconductor fiber optical detection
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
DE3047383A1 (de) * 1980-12-16 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Solarzelle mit erhoehtem wirkungsgrad
US4341918A (en) * 1980-12-24 1982-07-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High voltage planar multijunction solar cell
US4570173A (en) * 1981-05-26 1986-02-11 General Electric Company High-aspect-ratio hollow diffused regions in a semiconductor body
US4466180A (en) * 1981-06-25 1984-08-21 Rockwell International Corporation Method of manufacturing punch through voltage regulator diodes utilizing shaping and selective doping
US4527183A (en) * 1981-07-10 1985-07-02 General Electric Company Drilled, diffused radiation detector
US4454371A (en) * 1981-12-03 1984-06-12 The United States Of America As Represented By The Secretary Of The Air Force Solar energy concentrator system
JPS58219748A (ja) * 1982-06-15 1983-12-21 Toshiba Corp 半導体装置
US4612408A (en) * 1984-10-22 1986-09-16 Sera Solar Corporation Electrically isolated semiconductor integrated photodiode circuits and method
US4638110A (en) * 1985-06-13 1987-01-20 Illuminated Data, Inc. Methods and apparatus relating to photovoltaic semiconductor devices
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
FR2645345A1 (fr) * 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
US4971633A (en) * 1989-09-26 1990-11-20 The United States Of America As Represented By The Department Of Energy Photovoltaic cell assembly
JPH0831617B2 (ja) * 1990-04-18 1996-03-27 三菱電機株式会社 太陽電池及びその製造方法
US5391236A (en) * 1993-07-30 1995-02-21 Spectrolab, Inc. Photovoltaic microarray structure and fabrication method
US6034321A (en) * 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
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WO2003047004A1 (fr) * 2001-11-29 2003-06-05 Origin Energy Solar Pty Ltd Procede de texturation de semiconducteurs
JP2003124483A (ja) * 2001-10-17 2003-04-25 Toyota Motor Corp 光起電力素子
JP2004095669A (ja) * 2002-08-29 2004-03-25 Toyota Motor Corp 光電変換素子
FR2849276A1 (fr) * 2002-12-24 2004-06-25 Commissariat Energie Atomique Module photovoltaique integre pour systeme a concentration et un procede de fabrication
JP4247017B2 (ja) * 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
US20050081908A1 (en) * 2003-03-19 2005-04-21 Stewart Roger G. Method and apparatus for generation of electrical power from solar energy
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
WO2006122774A1 (fr) * 2005-05-17 2006-11-23 Interuniversitair Microelektronica Centrum Vzw Procede permettant de produire des cellules photovoltaiques
US10873045B2 (en) * 2005-11-29 2020-12-22 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
US20090090412A1 (en) * 2005-12-22 2009-04-09 Hermann Calwer Photovoltaic device and method for encapsulating
WO2007071703A1 (fr) * 2005-12-22 2007-06-28 Shell Erneuerbare Energien Gmbh Dispositif photovoltaïque et procédé d’encapsulation
JP5081389B2 (ja) * 2006-02-23 2012-11-28 三洋電機株式会社 光起電力装置の製造方法
US20090038669A1 (en) * 2006-09-20 2009-02-12 Translucent Photonics, Inc. Thin Film Solar Cell III
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
FR2481519A1 (fr) * 1979-04-23 1981-10-30 Gen Electric Dispositif photovoltaique et procede de fabrication

Also Published As

Publication number Publication date
IL52160A (en) 1979-03-12
US4110122A (en) 1978-08-29
CA1072196A (fr) 1980-02-19
JPS538094A (en) 1978-01-25
IL52160A0 (en) 1977-07-31
ZA772631B (en) 1978-12-27
ZA773186B (en) 1978-04-26
US4131984A (en) 1979-01-02

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