FR2348572A1 - Procede de croissance d'une couche epitaxiale pour la fabrication de dispositifs a semi-conducteurs - Google Patents

Procede de croissance d'une couche epitaxiale pour la fabrication de dispositifs a semi-conducteurs

Info

Publication number
FR2348572A1
FR2348572A1 FR7710561A FR7710561A FR2348572A1 FR 2348572 A1 FR2348572 A1 FR 2348572A1 FR 7710561 A FR7710561 A FR 7710561A FR 7710561 A FR7710561 A FR 7710561A FR 2348572 A1 FR2348572 A1 FR 2348572A1
Authority
FR
France
Prior art keywords
growth
manufacture
semiconductor devices
epitaxial layer
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7710561A
Other languages
English (en)
French (fr)
Other versions
FR2348572B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2348572A1 publication Critical patent/FR2348572A1/fr
Application granted granted Critical
Publication of FR2348572B1 publication Critical patent/FR2348572B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H04B10/2507—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3222—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
FR7710561A 1976-04-13 1977-04-07 Procede de croissance d'une couche epitaxiale pour la fabrication de dispositifs a semi-conducteurs Granted FR2348572A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/676,556 US4032951A (en) 1976-04-13 1976-04-13 Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses

Publications (2)

Publication Number Publication Date
FR2348572A1 true FR2348572A1 (fr) 1977-11-10
FR2348572B1 FR2348572B1 (https=) 1982-01-22

Family

ID=24714996

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7710561A Granted FR2348572A1 (fr) 1976-04-13 1977-04-07 Procede de croissance d'une couche epitaxiale pour la fabrication de dispositifs a semi-conducteurs

Country Status (7)

Country Link
US (2) US4032951A (https=)
JP (1) JPS52124886A (https=)
CA (1) CA1092006A (https=)
DE (1) DE2715558A1 (https=)
FR (1) FR2348572A1 (https=)
GB (1) GB1526695A (https=)
NL (1) NL7703967A (https=)

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Publication number Priority date Publication date Assignee Title
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
DE2730358C3 (de) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie
US4136350A (en) * 1977-07-14 1979-01-23 Bell Telephone Laboratories, Incorporated Epitaxial growth of dissimilar materials
US4207122A (en) * 1978-01-11 1980-06-10 International Standard Electric Corporation Infra-red light emissive devices
US4184171A (en) * 1978-07-05 1980-01-15 Bell Telephone Laboratories, Incorporated Light emitting diodes which emit in the infrared
FR2435816A1 (fr) * 1978-09-08 1980-04-04 Radiotechnique Compelec Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede
US4195305A (en) * 1978-09-25 1980-03-25 Varian Associates, Inc. Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system
US4214550A (en) * 1979-05-21 1980-07-29 Rca Corporation Apparatus for the deposition of a material from a liquid phase
US4246050A (en) * 1979-07-23 1981-01-20 Varian Associates, Inc. Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system
US4263064A (en) * 1980-02-19 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Method of liquid phase epitaxial growth
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4439399A (en) * 1982-05-06 1984-03-27 The United States Of America As Represented By The Secretary Of The Air Force Quaternary alloy
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
DE3679618D1 (de) * 1985-08-26 1991-07-11 Matsushita Electric Industrial Co Ltd Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie.
DE3876869D1 (de) * 1987-06-22 1993-02-04 Landis & Gyr Betriebs Ag Photodetektor fuer ultraviolett und verfahren zur herstellung.
US4859628A (en) * 1988-04-11 1989-08-22 Northern Telecom Limited Interrupted liquid phase epitaxy process
JPH02174272A (ja) * 1988-12-17 1990-07-05 Samsung Electron Co Ltd 発光ダイオードアレイの製造方法
CA2125212A1 (en) * 1993-09-13 1995-03-14 John E. Cunningham Method for producing a precise alloy composition from input variables under nonlinear incorporation conditions
US6246808B1 (en) * 1999-05-21 2001-06-12 Trw Inc. Optical switch apparatus
US7483462B2 (en) * 2004-04-30 2009-01-27 Finisar Corporation Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells
DE102004023977A1 (de) * 2004-05-14 2006-01-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparenter Kontakt und Verfahren zu dessen Herstellung
KR20060032047A (ko) * 2004-10-11 2006-04-14 삼성전자주식회사 시료의 표면 분석 방법
DE212009000126U1 (de) * 2008-09-30 2011-12-20 Nikolay N. Skaldin Kristallisator
US7915639B2 (en) * 2008-10-20 2011-03-29 Aerius Photonics Llc InGaAsSbN photodiode arrays
RU2605839C2 (ru) * 2015-03-03 2016-12-27 Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" (Госкорпорация "РОСКОСМОС") Фотоэлектрический преобразователь
EP3314660B1 (en) 2015-06-23 2025-12-17 Intel Corporation Indium-rich nmos transistor channels
US11322640B2 (en) * 2019-03-20 2022-05-03 Trieye Ltd. Ge—GaAs heterojunction-based SWIR photodetector

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BE620887A (https=) * 1959-06-18
US3614549A (en) * 1968-10-15 1971-10-19 Ibm A semiconductor recombination radiation device
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3677836A (en) * 1969-09-23 1972-07-18 Ibm Liquid epitaxy method of fabricating controlled band gap gaal as electroluminescent devices
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3785885A (en) * 1970-03-24 1974-01-15 Texas Instruments Inc Epitaxial solution growth of ternary iii-v compounds
US3721583A (en) * 1970-12-08 1973-03-20 Ibm Vapor phase epitaxial deposition process for forming superlattice structure
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
US3821033A (en) * 1972-08-03 1974-06-28 Ibm Method for producing flat composite semiconductor substrates
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US3958263A (en) * 1973-11-12 1976-05-18 Bell Telephone Laboratories, Incorporated Stress reduction in algaas-algaasp multilayer structures
US3962716A (en) * 1973-11-12 1976-06-08 Bell Telephone Laboratories, Incorporated Reduction of dislocations in multilayer structures of zinc-blend materials

Also Published As

Publication number Publication date
JPS52124886A (en) 1977-10-20
CA1092006A (en) 1980-12-23
NL7703967A (nl) 1977-10-17
DE2715558A1 (de) 1977-10-27
FR2348572B1 (https=) 1982-01-22
GB1526695A (en) 1978-09-27
US4072544A (en) 1978-02-07
US4032951A (en) 1977-06-28

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