DE3679618D1 - Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie. - Google Patents
Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie.Info
- Publication number
- DE3679618D1 DE3679618D1 DE8686306552T DE3679618T DE3679618D1 DE 3679618 D1 DE3679618 D1 DE 3679618D1 DE 8686306552 T DE8686306552 T DE 8686306552T DE 3679618 T DE3679618 T DE 3679618T DE 3679618 D1 DE3679618 D1 DE 3679618D1
- Authority
- DE
- Germany
- Prior art keywords
- abrupted
- epitaxy
- transition
- production
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000407 epitaxy Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18690285A JPS6247158A (ja) | 1985-08-26 | 1985-08-26 | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
JP19077785A JPS6249656A (ja) | 1985-08-29 | 1985-08-29 | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
JP19078685A JPS6249662A (ja) | 1985-08-29 | 1985-08-29 | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3679618D1 true DE3679618D1 (de) | 1991-07-11 |
Family
ID=27325809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686306552T Expired - Lifetime DE3679618D1 (de) | 1985-08-26 | 1986-08-22 | Halbleiterbauelement mit einem abrupten uebergang und verfahren zu seiner herstellung mittels epitaxie. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5037769A (de) |
EP (1) | EP0214802B1 (de) |
DE (1) | DE3679618D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2706080B1 (fr) * | 1993-06-04 | 1995-07-21 | Thomson Csf | Transistor bipolaire à hétérojonction à sous-collecteur/collecteur enterré. |
US5468659A (en) * | 1994-03-10 | 1995-11-21 | Hughes Aircraft Company | Reduction of base-collector junction parasitic capacitance of heterojunction bipolar transistors |
DE19533677A1 (de) * | 1995-09-12 | 1997-03-13 | Daimler Benz Ag | Verfahren zur Herstellung eines Heterobipolartransistors |
US6368930B1 (en) * | 1998-10-02 | 2002-04-09 | Ziptronix | Self aligned symmetric process and device |
US6573599B1 (en) | 2000-05-26 | 2003-06-03 | Skyworks Solutions, Inc. | Electrical contact for compound semiconductor device and method for forming same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE758682A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un transistor a socle |
US4055443A (en) * | 1975-06-19 | 1977-10-25 | Jury Stepanovich Akimov | Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating |
US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
US4080617A (en) * | 1976-06-09 | 1978-03-21 | Northern Telecom Limited | Optoelectronic devices with control of light propagation |
DE2805008A1 (de) * | 1978-02-06 | 1979-08-09 | Siemens Ag | Hochfrequenztransistor |
US4237471A (en) * | 1979-06-22 | 1980-12-02 | Hamamatsu Corporation | Method of producing a semiconductor photodiode of indium antimonide and device thereof |
US4380774A (en) * | 1980-12-19 | 1983-04-19 | The United States Of America As Represented By The Secretary Of The Navy | High-performance bipolar microwave transistor |
JPS5932173A (ja) * | 1982-08-16 | 1984-02-21 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JPS59125680A (ja) * | 1983-01-06 | 1984-07-20 | Nec Corp | 半導体発光素子 |
JPS59168677A (ja) * | 1983-03-14 | 1984-09-22 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPS59217326A (ja) * | 1983-05-25 | 1984-12-07 | Canon Inc | 半導体装置形成法 |
JPS60253283A (ja) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | 半導体発光素子 |
US4662058A (en) * | 1984-11-05 | 1987-05-05 | Honeywell Inc. | Self-aligned gate process for ICS based on modulation doped (Al,Ga) As/GaAs FETs |
US4593457A (en) * | 1984-12-17 | 1986-06-10 | Motorola, Inc. | Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact |
US4651410A (en) * | 1984-12-18 | 1987-03-24 | Semiconductor Division Thomson-Csf Components Corporation | Method of fabricating regions of a bipolar microwave integratable transistor |
-
1986
- 1986-08-22 DE DE8686306552T patent/DE3679618D1/de not_active Expired - Lifetime
- 1986-08-22 EP EP86306552A patent/EP0214802B1/de not_active Expired
-
1989
- 1989-03-28 US US07/330,956 patent/US5037769A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0214802A3 (en) | 1987-09-02 |
EP0214802B1 (de) | 1991-06-05 |
EP0214802A2 (de) | 1987-03-18 |
US5037769A (en) | 1991-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |