FR2344847A1 - Procede de detection de defauts electriquement actifs dans un substrat de silicium de type n - Google Patents

Procede de detection de defauts electriquement actifs dans un substrat de silicium de type n

Info

Publication number
FR2344847A1
FR2344847A1 FR7702072A FR7702072A FR2344847A1 FR 2344847 A1 FR2344847 A1 FR 2344847A1 FR 7702072 A FR7702072 A FR 7702072A FR 7702072 A FR7702072 A FR 7702072A FR 2344847 A1 FR2344847 A1 FR 2344847A1
Authority
FR
France
Prior art keywords
detection
type
silicon substrate
electrically active
active faults
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7702072A
Other languages
English (en)
French (fr)
Other versions
FR2344847B1 (en:Method
Inventor
John L Deines
Michael R Poponiak
Robert O Schwenker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2344847A1 publication Critical patent/FR2344847A1/fr
Application granted granted Critical
Publication of FR2344847B1 publication Critical patent/FR2344847B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
FR7702072A 1976-03-15 1977-01-18 Procede de detection de defauts electriquement actifs dans un substrat de silicium de type n Granted FR2344847A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66723276A 1976-03-15 1976-03-15

Publications (2)

Publication Number Publication Date
FR2344847A1 true FR2344847A1 (fr) 1977-10-14
FR2344847B1 FR2344847B1 (en:Method) 1979-09-28

Family

ID=24677379

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7702072A Granted FR2344847A1 (fr) 1976-03-15 1977-01-18 Procede de detection de defauts electriquement actifs dans un substrat de silicium de type n

Country Status (6)

Country Link
JP (1) JPS52111373A (en:Method)
CA (1) CA1069221A (en:Method)
DE (1) DE2707372C2 (en:Method)
FR (1) FR2344847A1 (en:Method)
GB (1) GB1514697A (en:Method)
IT (1) IT1118013B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (fr) * 1982-09-08 1984-03-09 Comp Generale Electricite Procede et dispositif pour obtenir des caracteristiques physiques d'un materiau semi-conducteur

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066920A (ja) * 1983-09-22 1985-04-17 北興化工機株式会社 可搬式サイレ−ジ容器
DE3917702A1 (de) * 1989-05-31 1990-12-06 Siemens Ag Verfahren zur ortsaufgeloesten bestimmung der diffusionslaenge von minoritaetsladungstraegern in einem halbleiterkristallkoerper mit hilfe einer elektrolytischen zelle
EP0400387B1 (de) * 1989-05-31 1996-02-21 Siemens Aktiengesellschaft Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten
EP0400386B1 (de) * 1989-05-31 1994-08-24 Siemens Aktiengesellschaft Verfahren zur Bestimmung der Rekombinationsgeschwindigkeit von Minoritätsträgern an Grenzflächen zwischen Halbleitern und anderen Substanzen
DE4328083A1 (de) * 1993-08-20 1994-03-31 Ignaz Eisele Verfahren zur mikroskopischen Messung von Topographie und lateralen Potentialverteilungen an einer Oberfläche mit einer Feldeffektanordnung
JP4916249B2 (ja) * 2006-08-10 2012-04-11 新電元工業株式会社 半導体基板の検査方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN VOL. 18, NO.10, MARS 1976, NEW YORK USA J.L.DEINES ET AL.: "TECHNIQUE FOR ANALYSIS AND DISTRIBUTION OF AUTODOPING IN EXPITAXIAL FILMS", PAGES 3290-3291.) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (fr) * 1982-09-08 1984-03-09 Comp Generale Electricite Procede et dispositif pour obtenir des caracteristiques physiques d'un materiau semi-conducteur
EP0103806A1 (fr) * 1982-09-08 1984-03-28 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Procédé et dispositif pour étudier des caractéristiques physiques d'une plaquette semi-conductrice

Also Published As

Publication number Publication date
CA1069221A (en) 1980-01-01
JPS52111373A (en) 1977-09-19
DE2707372C2 (de) 1985-08-22
GB1514697A (en) 1978-06-21
JPS5320380B2 (en:Method) 1978-06-26
IT1118013B (it) 1986-02-24
FR2344847B1 (en:Method) 1979-09-28
DE2707372A1 (de) 1977-09-22

Similar Documents

Publication Publication Date Title
DK259077A (da) Apparat til bestraling et substrat
DE2860169D1 (en) Method for fabricating tantalum contacts on a n-type conducting silicon semiconductor substrate
FR2345532A1 (fr) Procede de nettoyage de la surface de substrats semi-conducteurs
SE7810314L (sv) Substrat for sammanbindning av integrerade kretsar
FI772469A7 (fi) Varuunderlag
AU2795477A (en) Semiconductor device including an amorphous silicon layer
FR2346856A1 (fr) Procede de piegeage d'impuretes utilisant du silicium polycristallin sur la face arriere d'un bloc semi-conducteur
DE3855424D1 (de) Haltevorrichtung für Substratscheiben
IT1083230B (it) Procedimento per produrre uno strato assorbente solare selettivo su una superficie di alluminio
FR2352398A1 (fr) Dispositif a semi-conducteur, circuit integre et leu r procede de realisation
JPS533773A (en) Method of etching substrate
IT8022509A0 (it) Metodo per saldare dispositivi semiconduttori a substrati disupporto.
FR2325196A1 (fr) Dispositif semi-conducteur presentant des courants de fuite en surface reduits et procede de fabrication
IT1110178B (it) Procedimento per depositare uno strato di solfuro di cadmio su un semiconduttore
IT1087608B (it) Procedimento per formare uno strato monocristallino su un substrato
FR2344847A1 (fr) Procede de detection de defauts electriquement actifs dans un substrat de silicium de type n
SE421566B (sv) Ytundersokningsanordning for metning av glans hos en yta
FR2279223A1 (fr) Procede d'implantation d'ions dans un substrat semi-conducteur au travers d'un revetement protecteur
IT1092154B (it) Sottostrati cromogeni per la diagnosi di serina proteasi
IT1055133B (it) Dispositivo per il fissaggio di elementi di trazione su platine di una macchina jaquard
JPS53130975A (en) Method of and device for doping semiconductor substrate
JPS5442981A (en) Method of measuring defective position distribution in monocrystal semiconductor substrate
FR2309062A1 (fr) Dispositif de detection de defauts a la terre dans un reseau electrique
FR2336800A1 (fr) Structure de dispositif semi-conducteur monolithique
JPS5381066A (en) Method of detecting crystal defect of semiconductor silicon

Legal Events

Date Code Title Description
ST Notification of lapse