FR2319926A1 - Fine pattern prodn. in metal halide layer on substrate - using laser beam to give precise patterns by dry process - Google Patents

Fine pattern prodn. in metal halide layer on substrate - using laser beam to give precise patterns by dry process

Info

Publication number
FR2319926A1
FR2319926A1 FR7622830A FR7622830A FR2319926A1 FR 2319926 A1 FR2319926 A1 FR 2319926A1 FR 7622830 A FR7622830 A FR 7622830A FR 7622830 A FR7622830 A FR 7622830A FR 2319926 A1 FR2319926 A1 FR 2319926A1
Authority
FR
France
Prior art keywords
prodn
substrate
metal halide
laser beam
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7622830A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50091127A external-priority patent/JPS5215267A/en
Priority claimed from JP9186375A external-priority patent/JPS5216220A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2319926A1 publication Critical patent/FR2319926A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G03C1/725—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705 containing inorganic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/58—Processes for obtaining metallic images by vapour deposition or physical development
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The substrate is coated with a metal halide (I) and exposure with radiation of an energy higher than that corresp. to the forbidden width of (I) and a stimulation intensity higher than that needed for stimulation of 1/10th of a mol. constituent of (I). (I) (lower limit of the stimulation energy in mJ/cm2) pref. is PbI2 (10), BiI3 (7), GeIi (6), SnI2 (u0), AsI3 (9), SbI3 (9), HgI2 (9), TlI (11), SnCl2 (15), PbCl2 (15), HgCl2 (15), SnBr2 (13), PbBr2 (10) or BiBr3 (11). Used for the prodn. of very fine patterns needed for etching, vapour deposition or diffusion processes in the prodn. of semiconductor structures and for lattices, rasters, video discs etc. The process gives very fine and precise patterns.
FR7622830A 1975-07-28 1976-07-27 Fine pattern prodn. in metal halide layer on substrate - using laser beam to give precise patterns by dry process Withdrawn FR2319926A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP50091127A JPS5215267A (en) 1975-07-28 1975-07-28 Fine processing method
JP9186375A JPS5216220A (en) 1975-07-30 1975-07-30 Recording material

Publications (1)

Publication Number Publication Date
FR2319926A1 true FR2319926A1 (en) 1977-02-25

Family

ID=26432596

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7622830A Withdrawn FR2319926A1 (en) 1975-07-28 1976-07-27 Fine pattern prodn. in metal halide layer on substrate - using laser beam to give precise patterns by dry process

Country Status (3)

Country Link
DE (1) DE2633947A1 (en)
FR (1) FR2319926A1 (en)
NL (1) NL7608152A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0012819A2 (en) * 1978-12-29 1980-07-09 International Business Machines Corporation Method for forming a film adhering to a substrate and method for writing and erasing information in a film thus prepared
EP0501278A1 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Method to produce masking

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0012819A2 (en) * 1978-12-29 1980-07-09 International Business Machines Corporation Method for forming a film adhering to a substrate and method for writing and erasing information in a film thus prepared
EP0012819A3 (en) * 1978-12-29 1980-10-01 International Business Machines Corporation Method for forming a film adhering to a substrate and method for writing and erasing information in a film thus prepared
EP0501278A1 (en) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Method to produce masking
US6432317B1 (en) 1991-02-28 2002-08-13 Texas Instruments Incorporated Method to produce masking

Also Published As

Publication number Publication date
DE2633947A1 (en) 1977-02-03
NL7608152A (en) 1977-02-01

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Legal Events

Date Code Title Description
ST Notification of lapse