JPH0145626B2 - - Google Patents
Info
- Publication number
- JPH0145626B2 JPH0145626B2 JP56116189A JP11618981A JPH0145626B2 JP H0145626 B2 JPH0145626 B2 JP H0145626B2 JP 56116189 A JP56116189 A JP 56116189A JP 11618981 A JP11618981 A JP 11618981A JP H0145626 B2 JPH0145626 B2 JP H0145626B2
- Authority
- JP
- Japan
- Prior art keywords
- light source
- mask
- photoreceptor
- exposed
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は、所定のマスクパターンを半導体ウエ
フア等の被露光体上に露光する方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of exposing a predetermined mask pattern onto an object to be exposed, such as a semiconductor wafer.
マスクのパターンを半導体ウエフア等の被露光
体上に露光させるには、第1図に示す如く、例え
ば感光体1を半導体ウエフア等の被露光体2上に
塗布し、感光体1の表面と50μm程度離してマス
ク3を配設し、マスク3を通して感光体1に光源
4からの光を照射し、マスク3のパターンを被露
光体2上に露光していた。 In order to expose the pattern of the mask onto an object to be exposed such as a semiconductor wafer, as shown in FIG. Masks 3 are placed at a certain distance from each other, and light from a light source 4 is irradiated onto the photoreceptor 1 through the mask 3, thereby exposing the pattern of the mask 3 onto the object 2 to be exposed.
なお、第1図中5は集光レンズである。 Note that 5 in FIG. 1 is a condenser lens.
この露光に際し、露光動作からすると光源4と
しては点光源であることが望ましいのであるが、
実際には出力等の関係から線光源が使用されてい
る。 During this exposure, it is desirable that the light source 4 be a point light source from the perspective of the exposure operation.
In practice, a line light source is used due to its output.
このように、光源4が線光源であるために、線
光源の長さ方向に平行なパターンの線はほぼ正確
に露光されるのであるが、線光源の長さ方向に交
叉するパターンの線は、この線に入射する線光線
からの光線の入射角に大きな違いがあるために、
第2図に示す如く、半影部分6が大きく形成さ
れ、パターンの幅が正確に露光されないという不
都合があつた。 In this way, since the light source 4 is a line light source, the lines of the pattern parallel to the length direction of the line light source are exposed almost accurately, but the lines of the pattern that intersect the length direction of the line light source are exposed almost exactly. , due to the large difference in the angle of incidence of the rays from the line rays incident on this line,
As shown in FIG. 2, the penumbra portion 6 was formed to be large and there was a problem that the width of the pattern could not be accurately exposed.
本発明は、上記した線光源を使用した露光にお
ける不都合を解消することを目的として創案され
たものである。 The present invention was created with the aim of solving the above-mentioned disadvantages in exposure using a line light source.
以下、本発明を図面に従つて説明する。 The present invention will be explained below with reference to the drawings.
本発明は、感光体1を表面に塗布した被露光体
2上に近接して対向させたマスク3を介して線光
源体7からの光を照射して、前記感光体1表面に
前記マスク3を露光させるに際して、前記線光源
体7を、前記感光体1表面に平行な仮想される平
面に沿つて、前記被露光体2の略中心に立てられ
た仮想される垂直線を中心として、回動もしくは
回転させながら前記マスク3のパターンを前記感
光体1表面に露光する露光方法である。 In the present invention, light from a line light source 7 is irradiated onto the surface of the photoreceptor 1 by irradiating light from a line light source 7 through a mask 3 which is placed close to and facing an exposed object 2 on which the surface of the photoreceptor 1 is coated. When exposing the object to light, the linear light source 7 is rotated along an imaginary plane parallel to the surface of the photoreceptor 1, about an imaginary vertical line erected approximately at the center of the object 2 to be exposed. This is an exposure method in which the pattern of the mask 3 is exposed onto the surface of the photoreceptor 1 while moving or rotating it.
すなわち、第3図において、線光源体7は、適
当な手段により回動もしくは回転可能に設けられ
ており、感光体1を表面に塗布した被露光体2、
マスク3、そしてレンズ5は従来の露光と同様に
配置されている。 That is, in FIG. 3, the linear light source body 7 is rotatably provided by an appropriate means, and the exposed body 2, whose surface is coated with the photoreceptor 1,
The mask 3 and lens 5 are arranged in the same manner as in conventional exposure.
この第3図に示した配置関係のまま、線光源体
7を回動もしくは回転させると、マスク3におけ
るパターンの線と線光源体7の長さ方向との平行
および交叉の関係が無くなり、このためパターン
の線に対する線光源体7からの入射光線のバラツ
キは全てのパターンの線に関して均一となり、こ
れにより半影部分6の少ない状態で均一な精度の
露光を達成できることになる。 If the line light source body 7 is rotated or rotated while maintaining the arrangement shown in FIG. 3, the parallel and intersecting relationship between the pattern lines on the mask 3 and the length direction of the line light source body 7 will disappear, and this Therefore, the variation in the incident light beam from the line light source 7 with respect to the lines of the pattern becomes uniform for all the lines of the pattern, and as a result, exposure with uniform precision can be achieved with fewer penumbras 6.
所で、線光源体7の被露光体2およびマスク3
に対する相対的な回動もしくは回転の形態として
は種々考えられる所であるが、線光源体7に対す
る冷却、配線のことを考慮した場合には、90度ま
たは180度の回動角度で反復回動させるのが有利
である。 By the way, the exposed object 2 and the mask 3 of the line light source 7
Various forms of relative rotation or rotation are possible, but when considering cooling and wiring for the line light source 7, repetitive rotation at a rotation angle of 90 degrees or 180 degrees is possible. It is advantageous to let them do so.
この場合、感光体1の露光が完了するには、こ
の感光体1の材質により決定される一定の時間の
露光時間を要するが、この一定時間内において、
任意のパターンの線に対する線光源体7の姿勢が
均一になるよう、線光源体7の回動速度および周
期を設定する必要がある。 In this case, a certain exposure time determined by the material of the photoreceptor 1 is required to complete the exposure of the photoreceptor 1, but within this certain time,
It is necessary to set the rotation speed and period of the line light source 7 so that the posture of the line light source 7 with respect to the lines of an arbitrary pattern is uniform.
また、線光源体7に対する冷却、配線の考慮を
払う必要のない場合とか、感光体1を表面に塗布
した被露光体2とマスク3との組合せ物を、線光
源体7に対して回転させることができるような場
合には、線光源体7を前記マスク3に対して比較
的速い速度で回転させると良い。 In addition, in cases where there is no need to take into consideration cooling and wiring for the linear light source 7, or when a combination of an exposed object 2 and a mask 3, the surface of which is coated with the photoreceptor 1, is rotated with respect to the linear light source 7. If possible, it is preferable to rotate the line light source 7 with respect to the mask 3 at a relatively high speed.
このように、線光源体7をマスク3に対して連
続回転させた場合、前記した如く、露光には一定
の時間を要することから、回転する線光源体7
は、マスク3に対して、線光源体7の長さを直径
とする円形の面光源となり、かつこの面光源の輝
度分布は、第4図に示す如く、中央が高い値を有
し、周縁に近づくに従つて低い値となる分布を描
くので、ほぼ点光源に近い光源とすることがで
き、これによつて全てのパターンの線に対して均
一な入射角度での光の照射を達成することができ
ることになる。 In this way, when the line light source body 7 is continuously rotated with respect to the mask 3, as described above, since exposure requires a certain amount of time, the rotating line light source body 7
becomes a circular surface light source with a diameter equal to the length of the linear light source 7 with respect to the mask 3, and the brightness distribution of this surface light source has a high value at the center and a high value at the periphery, as shown in FIG. As the value decreases as the value approaches You will be able to do that.
なお、上記した本発明を実施するに当り、使用
される線光源体7の数は限定されるものではな
く、2本または3本を平行に配置しても良いし、
さらに複数本の線光源を使用する場合、各線光源
を露光に適合すべく適当な配列に配置しても良
い。 In carrying out the present invention described above, the number of linear light sources 7 used is not limited, and two or three may be arranged in parallel,
Further, when a plurality of line light sources are used, each line light source may be arranged in an appropriate arrangement to suit exposure.
この線に対する線光源体からの光の照射角度
を、全てのパターンに対して均一にすることがで
きるので、感光体に形成される半影部分を極めて
小さくすることができ、これによつて高い精度で
かつ均一な精度でマスクのパターンを感光体に露
光することができる優れた効果を発揮する。 Since the irradiation angle of the light from the linear light source with respect to this line can be made uniform for all patterns, the penumbra formed on the photoreceptor can be made extremely small. It exhibits an excellent effect of being able to accurately and uniformly expose the mask pattern onto the photoreceptor.
第1図は、露光装置の基本的な配置を示す図で
ある。第2図は、線光源により感光体に形成され
る半影部分を示す図である。第3図は、本発明の
基本的操作を示す図である。第4図は線光源体を
連続回転した場合におけるマスクに対する光源の
輝度分布曲線を示すものである。
符号の説明、1……感光体、2……被露光体、
3……マスク、4……光源、6……半影部分、7
……線光源体。
FIG. 1 is a diagram showing the basic arrangement of an exposure device. FIG. 2 is a diagram showing a penumbra formed on a photoreceptor by a line light source. FIG. 3 is a diagram showing the basic operation of the present invention. FIG. 4 shows the brightness distribution curve of the light source with respect to the mask when the linear light source body is continuously rotated. Explanation of symbols: 1...photoreceptor, 2...exposed object,
3...mask, 4...light source, 6...penumbra, 7
... Line light source.
Claims (1)
面側に近接して対向させたマスクを介して光源か
らの光を照射して、前記感光体表面に前記マスク
のパターンを露光させるに際して、光源としての
線光源体を、前記感光体表面に平行な仮想される
平面に沿つて、前記被露光体の略中心に立てられ
た仮想される垂直線を中心として、該被露光体お
よびマスクと相対的に回動もしくは回転させなが
ら前記マスクのパターンを前記感光体上に露光す
る露光方法。1. When exposing a pattern of the mask onto the surface of the photoreceptor by irradiating light from a light source through a mask that is placed close to and facing the surface of the photoreceptor on an exposed object whose surface is coated with a photoreceptor, A line light source serving as a light source is placed along an imaginary plane parallel to the surface of the photoreceptor, with an imaginary vertical line erected approximately at the center of the exposed object, and the exposed object and the mask. An exposure method in which a pattern of the mask is exposed onto the photoreceptor while rotating or rotating the mask relatively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56116189A JPS5817445A (en) | 1981-07-24 | 1981-07-24 | Exposing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56116189A JPS5817445A (en) | 1981-07-24 | 1981-07-24 | Exposing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5817445A JPS5817445A (en) | 1983-02-01 |
JPH0145626B2 true JPH0145626B2 (en) | 1989-10-04 |
Family
ID=14681025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56116189A Granted JPS5817445A (en) | 1981-07-24 | 1981-07-24 | Exposing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5817445A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6064353A (en) * | 1983-09-20 | 1985-04-12 | Ushio Inc | Irradiating method of electric discharge lamp |
JPH0196656A (en) * | 1987-10-09 | 1989-04-14 | Omron Tateisi Electron Co | Charged beam exposure system |
JP2008129558A (en) * | 2006-11-27 | 2008-06-05 | Keio Gijuku | Curved surface manufacturing method using light source array as exposure light source |
-
1981
- 1981-07-24 JP JP56116189A patent/JPS5817445A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5817445A (en) | 1983-02-01 |
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