FR2316741A1 - Dispositif semi-conducteur et procede pour sa fabrication - Google Patents

Dispositif semi-conducteur et procede pour sa fabrication

Info

Publication number
FR2316741A1
FR2316741A1 FR7619971A FR7619971A FR2316741A1 FR 2316741 A1 FR2316741 A1 FR 2316741A1 FR 7619971 A FR7619971 A FR 7619971A FR 7619971 A FR7619971 A FR 7619971A FR 2316741 A1 FR2316741 A1 FR 2316741A1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7619971A
Other languages
English (en)
French (fr)
Other versions
FR2316741B1 (nl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2316741A1 publication Critical patent/FR2316741A1/fr
Application granted granted Critical
Publication of FR2316741B1 publication Critical patent/FR2316741B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
FR7619971A 1975-06-30 1976-06-30 Dispositif semi-conducteur et procede pour sa fabrication Granted FR2316741A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7507733A NL7507733A (nl) 1975-06-30 1975-06-30 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
FR2316741A1 true FR2316741A1 (fr) 1977-01-28
FR2316741B1 FR2316741B1 (nl) 1982-04-16

Family

ID=19824046

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7619971A Granted FR2316741A1 (fr) 1975-06-30 1976-06-30 Dispositif semi-conducteur et procede pour sa fabrication

Country Status (6)

Country Link
JP (1) JPS526085A (nl)
CA (1) CA1059240A (nl)
DE (1) DE2627307C3 (nl)
FR (1) FR2316741A1 (nl)
GB (1) GB1542897A (nl)
NL (1) NL7507733A (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192608A (en) * 1981-05-21 1982-11-26 Hisashi Watanabe Supporter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1811136A1 (de) * 1968-11-27 1970-11-05 Telefunken Patent Verfahren zum Herstellen eines Planartransistors
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof
US3873989A (en) * 1973-05-07 1975-03-25 Fairchild Camera Instr Co Double-diffused, lateral transistor structure
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede

Also Published As

Publication number Publication date
DE2627307A1 (de) 1977-01-20
CA1059240A (en) 1979-07-24
FR2316741B1 (nl) 1982-04-16
GB1542897A (en) 1979-03-28
NL7507733A (nl) 1977-01-03
JPS5634104B2 (nl) 1981-08-07
DE2627307C3 (de) 1982-03-11
JPS526085A (en) 1977-01-18
DE2627307B2 (de) 1981-07-02

Similar Documents

Publication Publication Date Title
BE842511A (fr) Dispositif semi-conducteur et son procede de fabrication
FR2309036A1 (fr) Dispositif semiconducteur et son procede de fabrication
FR2284192A1 (fr) Structure a semi-conducteur et procede pour sa fabrication
FR2332615A1 (fr) Procede de fabrication d'un dispositif a semi-conducteurs
FR2326038A1 (fr) Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant
FR2307281A1 (fr) Procede et dispositif pour la fabrication technique de porte-objets prerevetus
FR2290033A1 (fr) Procede pour fabriquer un dispositif semi-conducteur et dispositif ainsi obtenu
BE839972A (fr) Procede pour la fabrication d'un dispositif semiconducteur
FR2331884A1 (fr) Procede pour fabriquer un dispositif semi-conducteur, et dispositif fabrique de la sorte
BE842555A (fr) Circuit imprime flexible et procede pour sa fabrication
BE783737A (fr) Dispositif semiconducteur et procede de fabrication de ce dispositif
BE771917A (fr) Dispositif semiconducteur et procede permettant sa fabrication
BE791930A (fr) Dispositif electroluminescent et procede pour sa fabrication
FR2315174A1 (fr) Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication
FR2297936A1 (fr) Procede et dispositif pour automati
BE815669A (fr) Procede et dispositif pour la fabrication de pieces en ceramique
FR2325194A1 (fr) Dispositif de pompage de charge pour semi-conducteur et son procede de fabrication
BE776319A (fr) Dispositif semiconducteur et procede permettant sa fabrication
FR2325196A1 (fr) Dispositif semi-conducteur presentant des courants de fuite en surface reduits et procede de fabrication
FR2319978A1 (fr) Circuits integres semi-conducteurs et procede de preparation
FR2334205A1 (fr) Dispositif semi-conducteur et son procede de fabrication
BE782285A (fr) Dispositif semiconducteur, et procede permettant sa fabrication
FR2323347A1 (fr) Fermeture a glissiere, procede et dispositif pour sa fabrication
FR2330147A1 (fr) Procede pour fabriquer un dispositif a semi-conducteurs
FR2328283A1 (fr) Dispositif semiconducteur et procede permettant sa fabrication

Legal Events

Date Code Title Description
ST Notification of lapse