FR2313779B1 - - Google Patents

Info

Publication number
FR2313779B1
FR2313779B1 FR7527320A FR7527320A FR2313779B1 FR 2313779 B1 FR2313779 B1 FR 2313779B1 FR 7527320 A FR7527320 A FR 7527320A FR 7527320 A FR7527320 A FR 7527320A FR 2313779 B1 FR2313779 B1 FR 2313779B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7527320A
Other versions
FR2313779A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2313779A1 publication Critical patent/FR2313779A1/fr
Application granted granted Critical
Publication of FR2313779B1 publication Critical patent/FR2313779B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
FR7527320A 1975-03-11 1975-09-05 Dispositif optique a structure heterogene a injection double et procede pour sa fabrication Granted FR2313779A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/557,250 US3978426A (en) 1975-03-11 1975-03-11 Heterostructure devices including tapered optical couplers

Publications (2)

Publication Number Publication Date
FR2313779A1 FR2313779A1 (fr) 1976-12-31
FR2313779B1 true FR2313779B1 (fr) 1978-06-23

Family

ID=24224637

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527320A Granted FR2313779A1 (fr) 1975-03-11 1975-09-05 Dispositif optique a structure heterogene a injection double et procede pour sa fabrication

Country Status (11)

Country Link
US (1) US3978426A (fr)
JP (1) JPS5856990B2 (fr)
BE (1) BE832985A (fr)
CA (1) CA1044356A (fr)
DE (1) DE2538471A1 (fr)
ES (2) ES440764A1 (fr)
FR (1) FR2313779A1 (fr)
GB (2) GB1530802A (fr)
IT (1) IT1047165B (fr)
NL (1) NL183746C (fr)
SE (1) SE403011B (fr)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028146A (en) * 1975-03-11 1977-06-07 Bell Telephone Laboratories, Incorporated LPE Technique for fabricating tapered optical couplers
US4093345A (en) * 1976-05-27 1978-06-06 Bell Telephone Laboratories, Incorporated Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding
GB1572874A (en) * 1977-02-22 1980-08-06 Standard Telephones Cables Ltd Optical waveguides
US4124270A (en) * 1977-03-30 1978-11-07 United Technologies Corporation Monolithic, three-dimensional infrared waveguide for high power lasers
US4136928A (en) * 1977-05-06 1979-01-30 Bell Telephone Laboratories, Incorporated Optical integrated circuit including junction laser with oblique mirror
US4190813A (en) * 1977-12-28 1980-02-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
US4159452A (en) * 1978-01-13 1979-06-26 Bell Telephone Laboratories, Incorporated Dual beam double cavity heterostructure laser with branching output waveguides
JPS5562792A (en) * 1978-10-11 1980-05-12 Nec Corp Injection type semiconductor laser element
JPS56112786A (en) * 1980-02-08 1981-09-05 Nec Corp Manufacture of semiconductor laser
JPS56112785A (en) * 1980-02-08 1981-09-05 Nec Corp Semiconductor laser
JPS56112782A (en) * 1980-02-08 1981-09-05 Nec Corp Semiconductor laser
JPS56112784A (en) * 1980-02-08 1981-09-05 Nec Corp Semiconductor laser
JPS5898996A (ja) * 1981-12-03 1983-06-13 ゼロツクス・コ−ポレ−シヨン 注入形レ−ザ
US4464211A (en) * 1982-05-26 1984-08-07 At&T Bell Laboratories Method for selective area growth by liquid phase epitaxy
US4488307A (en) * 1982-06-07 1984-12-11 The United States Of America As Represented By The Secretary Of The Navy Three-mirror active-passive semiconductor laser
JPS5940592A (ja) * 1982-08-30 1984-03-06 Sharp Corp 半導体レ−ザ素子
US4523317A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with reduced absorption at a mirror facet
US4523316A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with non-absorbing mirror facet
JPS59188988A (ja) * 1983-04-11 1984-10-26 Nec Corp 半導体レ−ザおよびその駆動方法
US4577933A (en) * 1983-12-15 1986-03-25 Xerox Corporation Gap modulator for high speed scanners
US4581742A (en) * 1984-04-10 1986-04-08 Rca Corporation Semiconductor laser having a non-absorbing passive region with beam guiding
US4631730A (en) * 1984-09-28 1986-12-23 Bell Communications Research, Inc. Low noise injection laser structure
JPH0632339B2 (ja) * 1984-12-18 1994-04-27 キヤノン株式会社 半導体レ−ザ
EP0187979B1 (fr) * 1985-01-07 1993-04-07 Siemens Aktiengesellschaft Module WDM-demultiplex intégré monolithique et procédé de sa fabrication
JPH0626276B2 (ja) * 1985-01-14 1994-04-06 日本電気株式会社 レ−ザ光直接周波数変調方法
US4709371A (en) * 1985-10-18 1987-11-24 West Fred D Variable wavelength laser diode
US4745607A (en) * 1986-10-08 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Interlayer directional coupling in antiresonant reflecting optical waveguides
DE3738053A1 (de) * 1987-11-09 1989-05-18 Siemens Ag Laseranordnung mit mindestens einem laserresonator und einem damit verkoppelten passiven resonator
DE3836802A1 (de) * 1988-10-28 1990-05-03 Siemens Ag Halbleiterlaseranordnung fuer hohe ausgangsleistungen im lateralen grundmodus
CA2020246C (fr) * 1989-08-03 1994-02-01 Thomas L. Koch Guides d'ondes profiles a semiconducteur et methode de fabrication de ces guides
US4932032A (en) * 1989-08-03 1990-06-05 At&T Bell Laboratories Tapered semiconductor waveguides
US4944838A (en) * 1989-08-03 1990-07-31 At&T Bell Laboratories Method of making tapered semiconductor waveguides
DE59208821D1 (de) * 1991-02-08 1997-10-02 Siemens Ag Integriert optisches Bauelement für die Kopplung zwischen unterschiedlich dimensionierten Wellenleitern
US5109464A (en) * 1991-05-24 1992-04-28 Amoco Corporation Rib waveguide optimized for low loss coupling to optical fibers and method of determining same
FR2684823B1 (fr) * 1991-12-04 1994-01-21 Alcatel Alsthom Cie Gle Electric Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.
US5216727A (en) * 1992-05-08 1993-06-01 At&T Bell Laboratories Integrated nonlinear waveguide spectrometer
US5577141A (en) * 1995-03-10 1996-11-19 Lucent Technologies Inc. Two-dimensional segmentation mode tapering for integrated optic waveguides
US6052397A (en) * 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
US6876006B1 (en) 1999-04-27 2005-04-05 Schlumberger Technology Corporation Radiation source
US6293688B1 (en) 1999-11-12 2001-09-25 Sparkolor Corporation Tapered optical waveguide coupler
US6341189B1 (en) 1999-11-12 2002-01-22 Sparkolor Corporation Lenticular structure for integrated waveguides
US7088756B2 (en) * 2003-07-25 2006-08-08 Imra America, Inc. Polarization maintaining dispersion controlled fiber laser source of ultrashort pulses
KR100431084B1 (ko) * 2002-08-21 2004-05-12 한국전자통신연구원 광도파로 및 그의 제조 방법
US20040211972A1 (en) * 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
WO2020014561A1 (fr) * 2018-07-13 2020-01-16 The Government of the United State of America, as represented by the Secretary of the Navy Capteurs et lasers semi-conducteurs très stables pour des circuits intégrés photoniques sur iii-v et sur silicium
US11631967B2 (en) 2020-01-15 2023-04-18 Quintessent Inc. System comprising an integrated waveguide-coupled optically active device and method of formation
US11150406B2 (en) 2020-01-15 2021-10-19 Quintessent Inc. Optically active waveguide and method of formation

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US3428845A (en) * 1966-11-21 1969-02-18 Rca Corp Light-emitting semiconductor having relatively heavy outer layers for heat-sinking
CH449799A (de) * 1967-03-07 1968-01-15 Inst Angewandte Physik Diodenlaser
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
DE1812199C3 (de) * 1968-12-02 1980-07-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Integrierte, optisch-elektronische Festkörper-Schaltungsanordnung
GB1383549A (en) * 1972-07-28 1974-02-12 Post Office Optical communications systems
US3883888A (en) * 1973-11-12 1975-05-13 Rca Corp Efficiency light emitting diode

Also Published As

Publication number Publication date
JPS51104843A (fr) 1976-09-17
NL183746C (nl) 1989-01-02
ES440764A1 (es) 1977-04-01
DE2538471C2 (fr) 1990-04-26
FR2313779A1 (fr) 1976-12-31
NL183746B (nl) 1988-08-01
IT1047165B (it) 1980-09-10
NL7510493A (nl) 1976-09-14
JPS5856990B2 (ja) 1983-12-17
SE403011B (sv) 1978-07-24
BE832985A (fr) 1975-12-31
ES444528A1 (es) 1977-06-16
US3978426A (en) 1976-08-31
DE2538471A1 (de) 1976-09-23
CA1044356A (fr) 1978-12-12
GB1530802A (en) 1978-11-01
SE7509739L (sv) 1976-09-13
GB1530801A (en) 1978-11-01

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Legal Events

Date Code Title Description
ST Notification of lapse