FR2309040A1 - Circuit integre comportant un transistor vertical a base epitaxiale - Google Patents

Circuit integre comportant un transistor vertical a base epitaxiale

Info

Publication number
FR2309040A1
FR2309040A1 FR7611931A FR7611931A FR2309040A1 FR 2309040 A1 FR2309040 A1 FR 2309040A1 FR 7611931 A FR7611931 A FR 7611931A FR 7611931 A FR7611931 A FR 7611931A FR 2309040 A1 FR2309040 A1 FR 2309040A1
Authority
FR
France
Prior art keywords
integrated circuit
circuit including
vertical transistor
epitaxial base
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7611931A
Other languages
English (en)
French (fr)
Other versions
FR2309040B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2309040A1 publication Critical patent/FR2309040A1/fr
Application granted granted Critical
Publication of FR2309040B1 publication Critical patent/FR2309040B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H10W10/031—
    • H10W10/30—
FR7611931A 1975-04-22 1976-04-22 Circuit integre comportant un transistor vertical a base epitaxiale Granted FR2309040A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048189A JPS51123577A (en) 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Publications (2)

Publication Number Publication Date
FR2309040A1 true FR2309040A1 (fr) 1976-11-19
FR2309040B1 FR2309040B1 (enExample) 1979-01-12

Family

ID=12796429

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7611931A Granted FR2309040A1 (fr) 1975-04-22 1976-04-22 Circuit integre comportant un transistor vertical a base epitaxiale

Country Status (5)

Country Link
JP (1) JPS51123577A (enExample)
DE (1) DE2617521A1 (enExample)
FR (1) FR2309040A1 (enExample)
GB (1) GB1496306A (enExample)
IT (1) IT1058177B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445022A1 (fr) * 1978-12-22 1980-07-18 Ates Componenti Elettron Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu
EP0420672A1 (en) * 1989-09-29 1991-04-03 Kabushiki Kaisha Toshiba Semiconducteur stubstrate structure for use in power IC device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917409A (ja) * 1982-07-21 1984-01-28 Nissan Motor Co Ltd 搬送用ハンガ−
JPS6377144A (ja) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd 半導体集積回路
JP3653963B2 (ja) * 1997-12-25 2005-06-02 ソニー株式会社 半導体装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2154786A1 (enExample) * 1971-09-30 1973-05-11 Sony Corp
FR2200635A1 (enExample) * 1972-09-22 1974-04-19 Sony Corp

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (enExample) * 1971-09-28 1973-06-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2154786A1 (enExample) * 1971-09-30 1973-05-11 Sony Corp
FR2200635A1 (enExample) * 1972-09-22 1974-04-19 Sony Corp

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445022A1 (fr) * 1978-12-22 1980-07-18 Ates Componenti Elettron Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu
EP0420672A1 (en) * 1989-09-29 1991-04-03 Kabushiki Kaisha Toshiba Semiconducteur stubstrate structure for use in power IC device
US5159427A (en) * 1989-09-29 1992-10-27 Kabushiki Kaisha Toshiba Semiconductor substrate structure for use in power ic device

Also Published As

Publication number Publication date
DE2617521A1 (de) 1976-11-04
GB1496306A (en) 1977-12-30
IT1058177B (it) 1982-04-10
FR2309040B1 (enExample) 1979-01-12
JPS51123577A (en) 1976-10-28

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