FR2276655A1 - Memoire a semiconducteurs bipolaire - Google Patents
Memoire a semiconducteurs bipolaireInfo
- Publication number
- FR2276655A1 FR2276655A1 FR7519915A FR7519915A FR2276655A1 FR 2276655 A1 FR2276655 A1 FR 2276655A1 FR 7519915 A FR7519915 A FR 7519915A FR 7519915 A FR7519915 A FR 7519915A FR 2276655 A1 FR2276655 A1 FR 2276655A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor memory
- bipolar semiconductor
- bipolar
- memory
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742430784 DE2430784B2 (de) | 1974-06-26 | 1974-06-26 | Bipolarer halbleiterspeicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2276655A1 true FR2276655A1 (fr) | 1976-01-23 |
| FR2276655B1 FR2276655B1 (enExample) | 1982-02-12 |
Family
ID=5919049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7519915A Granted FR2276655A1 (fr) | 1974-06-26 | 1975-06-25 | Memoire a semiconducteurs bipolaire |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4005393A (enExample) |
| DE (1) | DE2430784B2 (enExample) |
| FR (1) | FR2276655A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341968A (en) * | 1976-09-29 | 1978-04-15 | Hitachi Ltd | Semiconductor circuit |
| US4162541A (en) * | 1977-02-17 | 1979-07-24 | Xerox Corporation | Apparatus for overscribing binary data of a selected polarity into a semiconductor store |
| US4142112A (en) * | 1977-05-06 | 1979-02-27 | Sperry Rand Corporation | Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same |
| DE3004565C2 (de) * | 1980-02-07 | 1984-06-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierte digitale Halbleiterschaltung |
| JPS5841596B2 (ja) * | 1980-11-28 | 1983-09-13 | 富士通株式会社 | スタティック型半導体記憶装置 |
| US4855803A (en) * | 1985-09-02 | 1989-08-08 | Ricoh Company, Ltd. | Selectively definable semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1482050A (fr) * | 1966-03-08 | 1967-05-26 | Labo Cent Telecommunicat | Mémoire matricielle en circuits intégrés |
| US3786442A (en) * | 1972-02-24 | 1974-01-15 | Cogar Corp | Rapid recovery circuit for capacitively loaded bit lines |
-
1974
- 1974-06-26 DE DE19742430784 patent/DE2430784B2/de active Granted
-
1975
- 1975-06-04 US US05/583,690 patent/US4005393A/en not_active Expired - Lifetime
- 1975-06-25 FR FR7519915A patent/FR2276655A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2276655B1 (enExample) | 1982-02-12 |
| DE2430784B2 (de) | 1977-02-10 |
| DE2430784A1 (de) | 1976-01-15 |
| US4005393A (en) | 1977-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |