FR2323210A1 - Memoire a semiconducteurs - Google Patents

Memoire a semiconducteurs

Info

Publication number
FR2323210A1
FR2323210A1 FR7626115A FR7626115A FR2323210A1 FR 2323210 A1 FR2323210 A1 FR 2323210A1 FR 7626115 A FR7626115 A FR 7626115A FR 7626115 A FR7626115 A FR 7626115A FR 2323210 A1 FR2323210 A1 FR 2323210A1
Authority
FR
France
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7626115A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2323210A1 publication Critical patent/FR2323210A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
FR7626115A 1975-09-08 1976-08-30 Memoire a semiconducteurs Pending FR2323210A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2539910A DE2539910C3 (de) 1975-09-08 1975-09-08 Halbleiterspeicher

Publications (1)

Publication Number Publication Date
FR2323210A1 true FR2323210A1 (fr) 1977-04-01

Family

ID=5955886

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626115A Pending FR2323210A1 (fr) 1975-09-08 1976-08-30 Memoire a semiconducteurs

Country Status (3)

Country Link
DE (1) DE2539910C3 (fr)
FR (1) FR2323210A1 (fr)
GB (1) GB1569594A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4219834A (en) * 1977-11-11 1980-08-26 International Business Machines Corporation One-device monolithic random access memory and method of fabricating same

Also Published As

Publication number Publication date
GB1569594A (en) 1980-06-18
DE2539910B2 (de) 1980-06-04
DE2539910A1 (de) 1977-03-17
DE2539910C3 (de) 1981-02-19

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