FR2235481A1 - - Google Patents

Info

Publication number
FR2235481A1
FR2235481A1 FR7415815A FR7415815A FR2235481A1 FR 2235481 A1 FR2235481 A1 FR 2235481A1 FR 7415815 A FR7415815 A FR 7415815A FR 7415815 A FR7415815 A FR 7415815A FR 2235481 A1 FR2235481 A1 FR 2235481A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7415815A
Other languages
French (fr)
Other versions
FR2235481B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2235481A1 publication Critical patent/FR2235481A1/fr
Application granted granted Critical
Publication of FR2235481B1 publication Critical patent/FR2235481B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10P50/282—
    • H10W20/092—
    • H10W20/40—
    • H10W20/42—
FR7415815A 1973-06-29 1974-04-29 Expired FR2235481B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00375298A US3804738A (en) 1973-06-29 1973-06-29 Partial planarization of electrically insulative films by resputtering

Publications (2)

Publication Number Publication Date
FR2235481A1 true FR2235481A1 (enExample) 1975-01-24
FR2235481B1 FR2235481B1 (enExample) 1976-07-16

Family

ID=23480308

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7415815A Expired FR2235481B1 (enExample) 1973-06-29 1974-04-29

Country Status (7)

Country Link
US (1) US3804738A (enExample)
JP (2) JPS5546060B2 (enExample)
CA (1) CA1030665A (enExample)
DE (1) DE2430692C2 (enExample)
FR (1) FR2235481B1 (enExample)
GB (1) GB1418278A (enExample)
IT (1) IT1010165B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340565A1 (fr) * 1976-02-04 1977-09-02 Kom Funkwerk Erfurt Procede et installation pour la fabrication de composants semi-conducteurs

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5639020B2 (enExample) * 1973-10-05 1981-09-10
US3976524A (en) * 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4007103A (en) * 1975-10-14 1977-02-08 Ibm Corporation Planarizing insulative layers by resputtering
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
FR2375718A1 (fr) * 1976-12-27 1978-07-21 Radiotechnique Compelec Dispositif semiconducteur a reseau d'interconnexions multicouche
DE2705611A1 (de) * 1977-02-10 1978-08-17 Siemens Ag Verfahren zum bedecken einer auf einem substrat befindlichen ersten schicht oder schichtenfolge mit einer weiteren zweiten schicht durch aufsputtern
NL7701559A (nl) * 1977-02-15 1978-08-17 Philips Nv Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon.
US4111775A (en) * 1977-07-08 1978-09-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multilevel metallization method for fabricating a metal oxide semiconductor device
JPS5432091A (en) * 1977-08-15 1979-03-09 Nec Corp Radar interference eleimenating system
JPS597212B2 (ja) * 1977-09-05 1984-02-17 富士通株式会社 プラズマ・エッチング方法
US4289834A (en) * 1977-10-20 1981-09-15 Ibm Corporation Dense dry etched multi-level metallurgy with non-overlapped vias
US4172004A (en) * 1977-10-20 1979-10-23 International Business Machines Corporation Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
JPS54159662A (en) * 1978-06-07 1979-12-17 Hitachi Ltd Method of connecting wire conductors
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
JPS5893354A (ja) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp 半導体装置の製造法
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
JPS59200440A (ja) * 1983-04-28 1984-11-13 Agency Of Ind Science & Technol 配線構造の製造方法
US4470874A (en) * 1983-12-15 1984-09-11 International Business Machines Corporation Planarization of multi-level interconnected metallization system
JPH0618194B2 (ja) * 1984-07-21 1994-03-09 工業技術院長 段差の被覆方法
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
US5855966A (en) * 1997-11-26 1999-01-05 Eastman Kodak Company Method for precision polishing non-planar, aspherical surfaces
US12057317B2 (en) * 2021-07-19 2024-08-06 Micron Technology, Inc. Conductive layers in memory array region and methods for forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514844A (en) * 1967-12-26 1970-06-02 Hughes Aircraft Co Method of making field-effect device with insulated gate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549876A (en) * 1968-03-07 1970-12-22 Eaton Yale & Towne Crane operating radius indicator
FR2119930B1 (enExample) * 1970-12-31 1974-08-19 Ibm
DE2202077A1 (de) * 1971-05-17 1972-11-30 Hochvakuum Dresden Veb Verfahren zur Herstellung von Mehrlagenleiterplatten

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514844A (en) * 1967-12-26 1970-06-02 Hughes Aircraft Co Method of making field-effect device with insulated gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340565A1 (fr) * 1976-02-04 1977-09-02 Kom Funkwerk Erfurt Procede et installation pour la fabrication de composants semi-conducteurs

Also Published As

Publication number Publication date
GB1418278A (en) 1975-12-17
US3804738A (en) 1974-04-16
IT1010165B (it) 1977-01-10
DE2430692C2 (de) 1982-10-21
JPS5623302B2 (enExample) 1981-05-30
JPS5546060B2 (enExample) 1980-11-21
JPS55130147A (en) 1980-10-08
DE2430692A1 (de) 1975-01-16
JPS5024079A (enExample) 1975-03-14
FR2235481B1 (enExample) 1976-07-16
CA1030665A (en) 1978-05-02

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Legal Events

Date Code Title Description
ST Notification of lapse