FR2175573A1 - Infra red image converter - comprising an led an ir sensitive device - Google Patents
Infra red image converter - comprising an led an ir sensitive deviceInfo
- Publication number
- FR2175573A1 FR2175573A1 FR7208825A FR7208825A FR2175573A1 FR 2175573 A1 FR2175573 A1 FR 2175573A1 FR 7208825 A FR7208825 A FR 7208825A FR 7208825 A FR7208825 A FR 7208825A FR 2175573 A1 FR2175573 A1 FR 2175573A1
- Authority
- FR
- France
- Prior art keywords
- led
- layer
- sensitive device
- infra red
- red image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
- H10F55/16—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers
- H10F55/165—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
- H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7208825A FR2175573A1 (en) | 1972-03-14 | 1972-03-14 | Infra red image converter - comprising an led an ir sensitive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7208825A FR2175573A1 (en) | 1972-03-14 | 1972-03-14 | Infra red image converter - comprising an led an ir sensitive device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2175573A1 true FR2175573A1 (en) | 1973-10-26 |
| FR2175573B1 FR2175573B1 (en:Method) | 1976-06-11 |
Family
ID=9095171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7208825A Granted FR2175573A1 (en) | 1972-03-14 | 1972-03-14 | Infra red image converter - comprising an led an ir sensitive device |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2175573A1 (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4301940A1 (en:Method) * | 1992-01-24 | 1993-07-29 | Nippon Steel Corp |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3173014A (en) * | 1961-06-30 | 1965-03-09 | Gen Electric | Electroluminescent quenching of a photoconductor through a substrate |
-
1972
- 1972-03-14 FR FR7208825A patent/FR2175573A1/fr active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3173014A (en) * | 1961-06-30 | 1965-03-09 | Gen Electric | Electroluminescent quenching of a photoconductor through a substrate |
Non-Patent Citations (2)
| Title |
|---|
| CONVERTER' C.LANZA AND J.WOODALL, PAGES 1870-1871, PAGE 1870-1871.) * |
| REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN, VOLUME 12, AVRIL 1970, N. 11, 'IMAGE * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4301940A1 (en:Method) * | 1992-01-24 | 1993-07-29 | Nippon Steel Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2175573B1 (en:Method) | 1976-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2248663B1 (en:Method) | ||
| GB1065450A (en) | Electro-optical transistor chopper | |
| SE7510405L (sv) | Fotonenergiomvandlare | |
| FR2327643A1 (fr) | Convertisseur d'energie lumineuse en energie electrique | |
| GB1044447A (en) | Improvements relating to electro-optical devices | |
| FR2175573A1 (en) | Infra red image converter - comprising an led an ir sensitive device | |
| JPS57104278A (en) | Photoelectric converting device | |
| CA920285A (en) | Extending the operating life of light emitting p-n junction devices | |
| GB1102749A (en) | A light modulator arrangement | |
| SE8200330L (sv) | Fotodetektor | |
| KR870700147A (ko) | 비선형 및 쌍안정 광학장치 | |
| JPS53121494A (en) | Photo electric converter having sensitivity to light of long wave lenght | |
| SE9101395L (sv) | Ytlysande lysdiod | |
| JPS5314587A (en) | Photo coupler | |
| JPS574180A (en) | Light-emitting element in gallium nitride | |
| JPS5320943A (en) | Semiconductor photo-modulator | |
| JPS54140887A (en) | Photoelectric semiconductor converter element | |
| JPS56118377A (en) | Solar cell module | |
| JPS5779685A (en) | Light emitting diode device | |
| JPS5648182A (en) | Photosensor | |
| KR970705187A (ko) | 중간 적외선 발광 다이오드(Mid infrared light emitting diode) | |
| JPS56107587A (en) | End radiation type light emitting diode | |
| JPS5624987A (en) | Gaas infrared ray emitting diode and manufacture thereof | |
| AT269237B (de) | Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute | |
| JPS5679480A (en) | Photoelectric conversion element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |