AT269237B - Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute - Google Patents

Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute

Info

Publication number
AT269237B
AT269237B AT138767A AT138767A AT269237B AT 269237 B AT269237 B AT 269237B AT 138767 A AT138767 A AT 138767A AT 138767 A AT138767 A AT 138767A AT 269237 B AT269237 B AT 269237B
Authority
AT
Austria
Prior art keywords
light emitting
emitting diode
semiconductor light
luminous efficiency
high luminous
Prior art date
Application number
AT138767A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT269237B publication Critical patent/AT269237B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
AT138767A 1966-02-15 1967-02-13 Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute AT269237B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES102022A DE1276817B (de) 1966-02-15 1966-02-15 Halbleiter-Lumineszenzdiode sehr hoher Lichtausbeute

Publications (1)

Publication Number Publication Date
AT269237B true AT269237B (de) 1969-03-10

Family

ID=7524144

Family Applications (1)

Application Number Title Priority Date Filing Date
AT138767A AT269237B (de) 1966-02-15 1967-02-13 Halbleiter-Lumineszenzdiode mit sehr hoher Lichtausbeute

Country Status (8)

Country Link
JP (1) JPS5234908B1 (de)
AT (1) AT269237B (de)
CH (1) CH450548A (de)
DE (1) DE1276817B (de)
FR (1) FR1511464A (de)
GB (1) GB1148110A (de)
NL (1) NL6617366A (de)
SE (1) SE323145B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259703B1 (en) 1993-10-22 2001-07-10 Mitel Corporation Time slot assigner for communication system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB765076A (en) * 1953-12-29 1957-01-02 British Thomson Houston Co Ltd Improvements in electro-luminescent devices
US2880346A (en) * 1954-09-30 1959-03-31 Rca Corp Electroluminescent device
DE1052563B (de) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen
DE1194976B (de) * 1963-02-25 1965-06-16 Siemens Ag Halbleiter-Dioden-Rekombinationsstrahler fuer den optischen Bereich
US3267317A (en) * 1963-02-25 1966-08-16 Rca Corp Device for producing recombination radiation

Also Published As

Publication number Publication date
FR1511464A (fr) 1968-01-26
DE1276817B (de) 1968-09-05
CH450548A (de) 1968-01-31
SE323145B (de) 1970-04-27
JPS5234908B1 (de) 1977-09-06
GB1148110A (en) 1969-04-10
NL6617366A (de) 1967-08-16

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