FR2175573B1 - - Google Patents

Info

Publication number
FR2175573B1
FR2175573B1 FR7208825A FR7208825A FR2175573B1 FR 2175573 B1 FR2175573 B1 FR 2175573B1 FR 7208825 A FR7208825 A FR 7208825A FR 7208825 A FR7208825 A FR 7208825A FR 2175573 B1 FR2175573 B1 FR 2175573B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7208825A
Other languages
French (fr)
Other versions
FR2175573A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7208825A priority Critical patent/FR2175573A1/fr
Publication of FR2175573A1 publication Critical patent/FR2175573A1/fr
Application granted granted Critical
Publication of FR2175573B1 publication Critical patent/FR2175573B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/16—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers
    • H10F55/165—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive semiconductor devices have no potential barriers wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
FR7208825A 1972-03-14 1972-03-14 Infra red image converter - comprising an led an ir sensitive device Granted FR2175573A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7208825A FR2175573A1 (en) 1972-03-14 1972-03-14 Infra red image converter - comprising an led an ir sensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7208825A FR2175573A1 (en) 1972-03-14 1972-03-14 Infra red image converter - comprising an led an ir sensitive device

Publications (2)

Publication Number Publication Date
FR2175573A1 FR2175573A1 (en) 1973-10-26
FR2175573B1 true FR2175573B1 (en:Method) 1976-06-11

Family

ID=9095171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7208825A Granted FR2175573A1 (en) 1972-03-14 1972-03-14 Infra red image converter - comprising an led an ir sensitive device

Country Status (1)

Country Link
FR (1) FR2175573A1 (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173014A (en) * 1961-06-30 1965-03-09 Gen Electric Electroluminescent quenching of a photoconductor through a substrate

Also Published As

Publication number Publication date
FR2175573A1 (en) 1973-10-26

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Legal Events

Date Code Title Description
ST Notification of lapse