FR2171877A1 - Semiconductor coating appts - giving improved uniformity of coating - Google Patents

Semiconductor coating appts - giving improved uniformity of coating

Info

Publication number
FR2171877A1
FR2171877A1 FR7204819A FR7204819A FR2171877A1 FR 2171877 A1 FR2171877 A1 FR 2171877A1 FR 7204819 A FR7204819 A FR 7204819A FR 7204819 A FR7204819 A FR 7204819A FR 2171877 A1 FR2171877 A1 FR 2171877A1
Authority
FR
France
Prior art keywords
appts
coating
improved uniformity
gases
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7204819A
Other languages
English (en)
Other versions
FR2171877B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7204819A priority Critical patent/FR2171877A1/fr
Publication of FR2171877A1 publication Critical patent/FR2171877A1/fr
Application granted granted Critical
Publication of FR2171877B1 publication Critical patent/FR2171877B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR7204819A 1972-02-14 1972-02-14 Semiconductor coating appts - giving improved uniformity of coating Granted FR2171877A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7204819A FR2171877A1 (en) 1972-02-14 1972-02-14 Semiconductor coating appts - giving improved uniformity of coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7204819A FR2171877A1 (en) 1972-02-14 1972-02-14 Semiconductor coating appts - giving improved uniformity of coating

Publications (2)

Publication Number Publication Date
FR2171877A1 true FR2171877A1 (en) 1973-09-28
FR2171877B1 FR2171877B1 (fr) 1976-08-20

Family

ID=9093432

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7204819A Granted FR2171877A1 (en) 1972-02-14 1972-02-14 Semiconductor coating appts - giving improved uniformity of coating

Country Status (1)

Country Link
FR (1) FR2171877A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410706A2 (fr) * 1989-07-26 1991-01-30 Hitachi, Ltd. Dispositif de traitement du plasma à basse température
EP0447031A1 (fr) * 1990-03-05 1991-09-18 Board Of Governors Of Wayne State University Suscepteur composite
EP0451351A1 (fr) * 1990-04-09 1991-10-16 Leybold Aktiengesellschaft Méthode pour chauffer directement un porte-substrat
EP0664346A1 (fr) * 1993-12-27 1995-07-26 General Electric Company Dispositif de dépôt de diamant par CVD
WO1995023428A2 (fr) * 1994-02-23 1995-08-31 Applied Materials, Inc. Chambre de depot chimique en phase vapeur
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410706A2 (fr) * 1989-07-26 1991-01-30 Hitachi, Ltd. Dispositif de traitement du plasma à basse température
EP0410706A3 (en) * 1989-07-26 1991-04-17 Hitachi, Ltd. Low-temperature plasma processor
EP0447031A1 (fr) * 1990-03-05 1991-09-18 Board Of Governors Of Wayne State University Suscepteur composite
EP0451351A1 (fr) * 1990-04-09 1991-10-16 Leybold Aktiengesellschaft Méthode pour chauffer directement un porte-substrat
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5856240A (en) * 1993-04-05 1999-01-05 Applied Materials, Inc. Chemical vapor deposition of a thin film onto a substrate
EP0664346A1 (fr) * 1993-12-27 1995-07-26 General Electric Company Dispositif de dépôt de diamant par CVD
WO1995023428A2 (fr) * 1994-02-23 1995-08-31 Applied Materials, Inc. Chambre de depot chimique en phase vapeur
WO1995023428A3 (fr) * 1994-02-23 1995-11-23 Applied Materials Inc Chambre de depot chimique en phase vapeur
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater

Also Published As

Publication number Publication date
FR2171877B1 (fr) 1976-08-20

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Legal Events

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