GB1210911A - Improvements in and relating to methods of depositing material from the vapour phase in a horizontal reactor - Google Patents
Improvements in and relating to methods of depositing material from the vapour phase in a horizontal reactorInfo
- Publication number
- GB1210911A GB1210911A GB4542266A GB4542266A GB1210911A GB 1210911 A GB1210911 A GB 1210911A GB 4542266 A GB4542266 A GB 4542266A GB 4542266 A GB4542266 A GB 4542266A GB 1210911 A GB1210911 A GB 1210911A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gas
- cross
- bodies
- sectional area
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
Abstract
1,210,911. Epitaxial and like coating. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 10 Oct., 1967 [11 Oct., 1966], No. 45422/66. Heading C1A. [Also in Division C7] A film of material may be deposited from the vapour phase in a substantially uniform thickness on each of a plurality of bodies in a horizontal reactor by causing the gas to flow in a gas chamber from a part of greater cross-sectional area to one of smaller cross-sectional area, the latter being partly defined by parallel upper and lower plane surfaces, the spacing of which and the gas velocity being chosen in order to establish adjacent the lower plane surface, on which the plurality of bodies rest, a boundary layer of relatively static gas, the boundary layer being of substantially constant depth and which is first established adjacent the interchange from greater to small cross-sectional area. The transverse cross-sections of the gas chamber are preferably rectangular. In the preferred apparatus gas enters via the tube 8 and leaves via tube 7; a radio frequency heating coil 6 and a susceptor 11 are provided, the susceptor body partly defining the part 18 of smaller cross-sectional area, body means 14 and 16 providing gradual change from greater to smaller and then again to greater cross-sectional areas; the bodies to be coated are placed on the surface 9 of the susceptor body. It is preferred to use a gas mixture of H 2 and SiCl 4 to coat an epitaxial layer of Si on Si bodies at 1100‹ C. Also disclosed are the same process using SiHCl 3 and H 2 , or the thermal dissociation of SiH 4 , the thermal dissociation of Si(EtO) 4 in N 2 to yield a film of SiO 2 , the deposition of silicon nitride from SiHCl 3 and NH 3 or the deposition of B from BBr3 and H 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4542266A GB1210911A (en) | 1966-10-11 | 1966-10-11 | Improvements in and relating to methods of depositing material from the vapour phase in a horizontal reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4542266A GB1210911A (en) | 1966-10-11 | 1966-10-11 | Improvements in and relating to methods of depositing material from the vapour phase in a horizontal reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1210911A true GB1210911A (en) | 1970-11-04 |
Family
ID=10437154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4542266A Expired GB1210911A (en) | 1966-10-11 | 1966-10-11 | Improvements in and relating to methods of depositing material from the vapour phase in a horizontal reactor |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1210911A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106458607A (en) * | 2014-05-13 | 2017-02-22 | 株式会社Lg化学 | Device for manufacturing polysilicon using horizontal reactor and method for manufacturing same |
-
1966
- 1966-10-11 GB GB4542266A patent/GB1210911A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106458607A (en) * | 2014-05-13 | 2017-02-22 | 株式会社Lg化学 | Device for manufacturing polysilicon using horizontal reactor and method for manufacturing same |
| CN106458607B (en) * | 2014-05-13 | 2018-12-25 | 株式会社Lg化学 | Use the device of horizontal reactor manufacture polysilicon and the manufacturing method of the polysilicon |
| US10196273B2 (en) | 2014-05-13 | 2019-02-05 | Lg Chem, Ltd. | Device for manufacturing polysilicon using horizontal reactor and method for manufacturing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4990374A (en) | Selective area chemical vapor deposition | |
| KR880003403A (en) | Chemical Vapor Growth and Its Apparatus | |
| GB1470614A (en) | Process for deposition of polycrystalline silicon | |
| GB1408056A (en) | Radial flow reactor | |
| ES8100356A1 (en) | Process for continuously depositing a layer of a solid material on the surface of a substrate heated to a high temperature | |
| GB1247585A (en) | Improvements in or relating to the deposition of layers of inorganic materials on the surfaces of semiconductor bodies | |
| GB1420557A (en) | Method of making a semiconductor device | |
| US11939675B2 (en) | Apparatus and methods for improving thermal chemical vapor deposition (CVD) uniformity | |
| GB1346938A (en) | Reactors and method of manufacture of semiconductor devices using such a reactor | |
| GB2086871A (en) | A method of chemical vapour deposition | |
| GB1459839A (en) | Dual growth rate method of depositing epitaxial crystalline layers | |
| GB1278361A (en) | Improvements in or relating to the manufacture of hollow bodies of semiconducting material | |
| US3484311A (en) | Silicon deposition process | |
| GB1174702A (en) | Semiconductor Growth on Dielectric Substrates | |
| GB1210911A (en) | Improvements in and relating to methods of depositing material from the vapour phase in a horizontal reactor | |
| US6231933B1 (en) | Method and apparatus for metal oxide chemical vapor deposition on a substrate surface | |
| GB1160301A (en) | Method of Forming a Crystalline Semiconductor Layer on an Alumina Substrate | |
| FR2171877A1 (en) | Semiconductor coating appts - giving improved uniformity of coating | |
| GB1132491A (en) | Improvements in or relating to the manufacture of semiconductor systems | |
| JPS55121648A (en) | Cvd device | |
| GB1142526A (en) | Process for making p-type diffusions into germanium | |
| JPS607378B2 (en) | CVD equipment | |
| JPS5648237A (en) | Evacuated gaseous phase reactor | |
| GB1141551A (en) | A method of coating metallic filaments | |
| ES327660A1 (en) | A method of treating graphite articles and products obtained thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |