FR2168398A1 - Perforated semiconductor body prodn - using gas phase reaction deposition on shaped substrate - Google Patents

Perforated semiconductor body prodn - using gas phase reaction deposition on shaped substrate

Info

Publication number
FR2168398A1
FR2168398A1 FR7301452A FR7301452A FR2168398A1 FR 2168398 A1 FR2168398 A1 FR 2168398A1 FR 7301452 A FR7301452 A FR 7301452A FR 7301452 A FR7301452 A FR 7301452A FR 2168398 A1 FR2168398 A1 FR 2168398A1
Authority
FR
France
Prior art keywords
gas phase
semiconductor body
phase reaction
shaped substrate
reaction deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7301452A
Other languages
English (en)
French (fr)
Other versions
FR2168398B3 (en, 2012
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722202055 external-priority patent/DE2202055A1/de
Priority claimed from DE19722221432 external-priority patent/DE2221432A1/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of FR2168398A1 publication Critical patent/FR2168398A1/fr
Application granted granted Critical
Publication of FR2168398B3 publication Critical patent/FR2168398B3/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
FR7301452A 1972-01-17 1973-01-16 Perforated semiconductor body prodn - using gas phase reaction deposition on shaped substrate Granted FR2168398A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19722202055 DE2202055A1 (de) 1972-01-17 1972-01-17 Anordnung zum herstellen eines rohres aus halbleitermaterial
DE19722221432 DE2221432A1 (de) 1972-05-02 1972-05-02 Verfahren und vorrichtung zum herstellen von mit ausnehmungen versehenen gegenstaenden aus halbleitermaterial

Publications (2)

Publication Number Publication Date
FR2168398A1 true FR2168398A1 (en) 1973-08-31
FR2168398B3 FR2168398B3 (en, 2012) 1976-01-16

Family

ID=25762580

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7301452A Granted FR2168398A1 (en) 1972-01-17 1973-01-16 Perforated semiconductor body prodn - using gas phase reaction deposition on shaped substrate

Country Status (5)

Country Link
JP (1) JPS4883776A (en, 2012)
BE (1) BE794138A (en, 2012)
FR (1) FR2168398A1 (en, 2012)
IT (1) IT978151B (en, 2012)
NL (1) NL7300628A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391463U (en, 2012) * 1976-12-27 1978-07-26

Also Published As

Publication number Publication date
FR2168398B3 (en, 2012) 1976-01-16
BE794138A (fr) 1973-07-17
IT978151B (it) 1974-09-20
JPS4883776A (en, 2012) 1973-11-08
NL7300628A (en, 2012) 1973-07-19

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Legal Events

Date Code Title Description
ST Notification of lapse