FR2168193A1 - Deposition of aiii (bc) v cpds - with varying proportions of bv and - Google Patents

Deposition of aiii (bc) v cpds - with varying proportions of bv and

Info

Publication number
FR2168193A1
FR2168193A1 FR7201788A FR7201788A FR2168193A1 FR 2168193 A1 FR2168193 A1 FR 2168193A1 FR 7201788 A FR7201788 A FR 7201788A FR 7201788 A FR7201788 A FR 7201788A FR 2168193 A1 FR2168193 A1 FR 2168193A1
Authority
FR
France
Prior art keywords
aiii
cpds
deposition
compsn
varying proportions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7201788A
Other languages
English (en)
French (fr)
Other versions
FR2168193B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7201788A priority Critical patent/FR2168193A1/fr
Publication of FR2168193A1 publication Critical patent/FR2168193A1/fr
Application granted granted Critical
Publication of FR2168193B1 publication Critical patent/FR2168193B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
FR7201788A 1972-01-19 1972-01-19 Deposition of aiii (bc) v cpds - with varying proportions of bv and Granted FR2168193A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7201788A FR2168193A1 (en) 1972-01-19 1972-01-19 Deposition of aiii (bc) v cpds - with varying proportions of bv and

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7201788A FR2168193A1 (en) 1972-01-19 1972-01-19 Deposition of aiii (bc) v cpds - with varying proportions of bv and

Publications (2)

Publication Number Publication Date
FR2168193A1 true FR2168193A1 (en) 1973-08-31
FR2168193B1 FR2168193B1 (OSRAM) 1976-07-23

Family

ID=9092144

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7201788A Granted FR2168193A1 (en) 1972-01-19 1972-01-19 Deposition of aiii (bc) v cpds - with varying proportions of bv and

Country Status (1)

Country Link
FR (1) FR2168193A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006118A1 (fr) * 1978-06-12 1980-01-09 International Business Machines Corporation Procédé de dépôt en phase vapeur d'arséniure de gallium à forte teneur en germanium

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006118A1 (fr) * 1978-06-12 1980-01-09 International Business Machines Corporation Procédé de dépôt en phase vapeur d'arséniure de gallium à forte teneur en germanium

Also Published As

Publication number Publication date
FR2168193B1 (OSRAM) 1976-07-23

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Legal Events

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