FR2162373B1 - - Google Patents
Info
- Publication number
- FR2162373B1 FR2162373B1 FR7240425A FR7240425A FR2162373B1 FR 2162373 B1 FR2162373 B1 FR 2162373B1 FR 7240425 A FR7240425 A FR 7240425A FR 7240425 A FR7240425 A FR 7240425A FR 2162373 B1 FR2162373 B1 FR 2162373B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- doped
- semi
- deposited
- epitaxially deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/2905—
-
- H10P14/2911—
-
- H10P14/3221—
-
- H10P14/3421—
-
- H10P14/3442—
Landscapes
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1801771A CH572985A5 (OSRAM) | 1971-12-10 | 1971-12-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2162373A1 FR2162373A1 (OSRAM) | 1973-07-20 |
| FR2162373B1 true FR2162373B1 (OSRAM) | 1978-03-03 |
Family
ID=4429804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7240425A Expired FR2162373B1 (OSRAM) | 1971-12-10 | 1972-11-08 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4866773A (OSRAM) |
| CH (1) | CH572985A5 (OSRAM) |
| DE (1) | DE2255508A1 (OSRAM) |
| FR (1) | FR2162373B1 (OSRAM) |
| GB (1) | GB1372610A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5154366A (ja) * | 1974-11-06 | 1976-05-13 | Mitsubishi Electric Corp | Handotaiepitakishiaruehaa |
| JPS5264272A (en) * | 1975-11-22 | 1977-05-27 | Fujitsu Ltd | Semiconductor crystal |
| FR2447612A1 (fr) * | 1979-01-26 | 1980-08-22 | Thomson Csf | Composant semi-conducteur a heterojonction |
| JPS61158185A (ja) * | 1984-12-28 | 1986-07-17 | Hosiden Electronics Co Ltd | 薄膜トランジスタ |
| JP2762919B2 (ja) * | 1994-03-24 | 1998-06-11 | 日本電気株式会社 | 半導体素子 |
-
1971
- 1971-12-10 CH CH1801771A patent/CH572985A5/xx not_active IP Right Cessation
-
1972
- 1972-11-08 FR FR7240425A patent/FR2162373B1/fr not_active Expired
- 1972-11-13 DE DE2255508A patent/DE2255508A1/de not_active Withdrawn
- 1972-11-21 GB GB5366772A patent/GB1372610A/en not_active Expired
- 1972-11-30 JP JP47119485A patent/JPS4866773A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2255508A1 (de) | 1973-06-20 |
| JPS4866773A (OSRAM) | 1973-09-12 |
| CH572985A5 (OSRAM) | 1976-02-27 |
| FR2162373A1 (OSRAM) | 1973-07-20 |
| GB1372610A (en) | 1974-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1378327A (en) | Iii-v compound on insulating substrate | |
| GB1180186A (en) | Improvements relating to Field-effect Transistors | |
| EP0312237A3 (en) | Interface charge enhancement in delta-doped heterostructure | |
| US4216036A (en) | Self-terminating thermal oxidation of Al-containing group III-V compound layers | |
| FR2162373B1 (OSRAM) | ||
| GB1479154A (en) | Germanium doped gaas devices | |
| GB1507701A (en) | Semiconductor devices | |
| JPS55117281A (en) | 3[5 group compound semiconductor hetero structure mosfet | |
| JPS5768073A (en) | Field effect transistor | |
| GB1332389A (en) | Preparation of gap-si heterojunction by liquid phase epitaxy | |
| JPS57208174A (en) | Semiconductor device | |
| JPS5752174A (en) | Multigate field effect transistor | |
| JPS57198661A (en) | Semiconductor device | |
| GB1526898A (en) | Production of epitaxial layers on monocrystalline substrates | |
| JPS5723280A (en) | Field effect type light detector | |
| KR860007745A (ko) | 화합물 반도체장치 | |
| JPS56104472A (en) | Semiconductor device | |
| JPS6027172A (ja) | 電界効果トランジスタ装置 | |
| JPH0221625A (ja) | 高電子移動度トランジスタ | |
| JPS57112080A (en) | Manufacture of field-effect transistor | |
| JPS5329072A (en) | Gallium arsenide semiconductor device | |
| JPS56105625A (en) | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density | |
| GB1515837A (en) | Semiconductor process | |
| JPH01166568A (ja) | 半導体装置 | |
| JPS56133819A (en) | Manufacture of epitaxial wafer for field effect transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |