JPS4866773A - - Google Patents
Info
- Publication number
- JPS4866773A JPS4866773A JP11948572A JP11948572A JPS4866773A JP S4866773 A JPS4866773 A JP S4866773A JP 11948572 A JP11948572 A JP 11948572A JP 11948572 A JP11948572 A JP 11948572A JP S4866773 A JPS4866773 A JP S4866773A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- doped
- semi
- deposited
- epitaxially deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1801771A CH572985A5 (ja) | 1971-12-10 | 1971-12-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4866773A true JPS4866773A (ja) | 1973-09-12 |
Family
ID=4429804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11948572A Pending JPS4866773A (ja) | 1971-12-10 | 1972-11-30 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4866773A (ja) |
| CH (1) | CH572985A5 (ja) |
| DE (1) | DE2255508A1 (ja) |
| FR (1) | FR2162373B1 (ja) |
| GB (1) | GB1372610A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5154366A (ja) * | 1974-11-06 | 1976-05-13 | Mitsubishi Electric Corp | Handotaiepitakishiaruehaa |
| JPS5264272A (en) * | 1975-11-22 | 1977-05-27 | Fujitsu Ltd | Semiconductor crystal |
| JPS61158185A (ja) * | 1984-12-28 | 1986-07-17 | Hosiden Electronics Co Ltd | 薄膜トランジスタ |
| JPH07263465A (ja) * | 1994-03-24 | 1995-10-13 | Nec Corp | 半導体素子 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2447612A1 (fr) * | 1979-01-26 | 1980-08-22 | Thomson Csf | Composant semi-conducteur a heterojonction |
-
1971
- 1971-12-10 CH CH1801771A patent/CH572985A5/xx not_active IP Right Cessation
-
1972
- 1972-11-08 FR FR7240425A patent/FR2162373B1/fr not_active Expired
- 1972-11-13 DE DE19722255508 patent/DE2255508A1/de not_active Withdrawn
- 1972-11-21 GB GB5366772A patent/GB1372610A/en not_active Expired
- 1972-11-30 JP JP11948572A patent/JPS4866773A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5154366A (ja) * | 1974-11-06 | 1976-05-13 | Mitsubishi Electric Corp | Handotaiepitakishiaruehaa |
| JPS5264272A (en) * | 1975-11-22 | 1977-05-27 | Fujitsu Ltd | Semiconductor crystal |
| JPS565055B2 (ja) * | 1975-11-22 | 1981-02-03 | ||
| JPS61158185A (ja) * | 1984-12-28 | 1986-07-17 | Hosiden Electronics Co Ltd | 薄膜トランジスタ |
| JPH07263465A (ja) * | 1994-03-24 | 1995-10-13 | Nec Corp | 半導体素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1372610A (en) | 1974-10-30 |
| FR2162373B1 (ja) | 1978-03-03 |
| FR2162373A1 (ja) | 1973-07-20 |
| DE2255508A1 (de) | 1973-06-20 |
| CH572985A5 (ja) | 1976-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1378327A (en) | Iii-v compound on insulating substrate | |
| GB1180186A (en) | Improvements relating to Field-effect Transistors | |
| EP0312237A3 (en) | Interface charge enhancement in delta-doped heterostructure | |
| FR2162373B1 (ja) | ||
| GB1081368A (en) | Improvements in or relating to transistor devices | |
| GB1479154A (en) | Germanium doped gaas devices | |
| GB1432877A (en) | Substrates of compound semiconductors | |
| GB1507701A (en) | Semiconductor devices | |
| JPS5646562A (en) | Semiconductor device | |
| GB1038900A (en) | Semiconductor device and fabrication thereof | |
| GB1332389A (en) | Preparation of gap-si heterojunction by liquid phase epitaxy | |
| JPS57208174A (en) | Semiconductor device | |
| GB1125157A (en) | Improvements in or relating to materials for use as ohmic contacts | |
| JPS57198661A (en) | Semiconductor device | |
| GB1526898A (en) | Production of epitaxial layers on monocrystalline substrates | |
| GB1335037A (en) | Field effect transistor | |
| JPS55140270A (en) | Insulated gate transistor | |
| JPS5723280A (en) | Field effect type light detector | |
| KR860007745A (ko) | 화합물 반도체장치 | |
| JPS56104472A (en) | Semiconductor device | |
| JPS57112080A (en) | Manufacture of field-effect transistor | |
| GB1314149A (en) | Epitaxial deposition | |
| GB1045429A (en) | Transistors | |
| JPS56105625A (en) | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density | |
| JPS54146974A (en) | Production of schottky field effect transistor |