FR2151171A5 - Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium - Google Patents

Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Info

Publication number
FR2151171A5
FR2151171A5 FR7130542A FR7130542A FR2151171A5 FR 2151171 A5 FR2151171 A5 FR 2151171A5 FR 7130542 A FR7130542 A FR 7130542A FR 7130542 A FR7130542 A FR 7130542A FR 2151171 A5 FR2151171 A5 FR 2151171A5
Authority
FR
France
Prior art keywords
gallium
aluminium arsenide
liquid phase
soln
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7130542A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7130542A priority Critical patent/FR2151171A5/fr
Priority to DE2238664A priority patent/DE2238664A1/de
Priority to AU45666/72A priority patent/AU4566672A/en
Priority to NL7211381A priority patent/NL7211381A/xx
Priority to IT69678/72A priority patent/IT964961B/it
Priority to JP47082879A priority patent/JPS4830691A/ja
Application granted granted Critical
Publication of FR2151171A5 publication Critical patent/FR2151171A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7130542A 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium Expired FR2151171A5 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium
DE2238664A DE2238664A1 (de) 1971-08-23 1972-08-05 Verfahren zum epitaktischen niederschlagen ternaerer iii-v-verbindungen aus der fluessigkeitsphase
AU45666/72A AU4566672A (en) 1971-08-23 1972-08-17 Method of epitaxially depositing ternary iii-v compounds from the liquid phase
NL7211381A NL7211381A (enExample) 1971-08-23 1972-08-18
IT69678/72A IT964961B (it) 1971-08-23 1972-08-19 Procedimento per il deposito epitas siale di composti ternari del tipo iii v dalla fase liquida
JP47082879A JPS4830691A (enExample) 1971-08-23 1972-08-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Publications (1)

Publication Number Publication Date
FR2151171A5 true FR2151171A5 (en) 1973-04-13

Family

ID=9082124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7130542A Expired FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Country Status (6)

Country Link
JP (1) JPS4830691A (enExample)
AU (1) AU4566672A (enExample)
DE (1) DE2238664A1 (enExample)
FR (1) FR2151171A5 (enExample)
IT (1) IT964961B (enExample)
NL (1) NL7211381A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519032A1 (fr) * 1981-12-28 1983-07-01 Benchimol Jean Louis Procede de depot par epitaxie en phase liquide d'un compose ternaire

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2251369B1 (enExample) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS5716487B2 (enExample) * 1974-07-01 1982-04-05
JPS524782A (en) * 1975-06-30 1977-01-14 Matsushita Electric Ind Co Ltd Liquid phase epitaxial growth method
JPS52135653A (en) * 1976-05-10 1977-11-12 Hitachi Ltd Differential amplifier
JPS55175239U (enExample) * 1979-06-04 1980-12-16
JP3199110B2 (ja) 1997-12-05 2001-08-13 松下電器産業株式会社 蛍光ランプ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519032A1 (fr) * 1981-12-28 1983-07-01 Benchimol Jean Louis Procede de depot par epitaxie en phase liquide d'un compose ternaire
EP0083540A1 (fr) * 1981-12-28 1983-07-13 Jean-Louis Benchimol Procédé de depôt par épitaxie en phase liquide d'un composé ternaire
US4532001A (en) * 1981-12-28 1985-07-30 Benchimol Jean Louis Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound

Also Published As

Publication number Publication date
JPS4830691A (enExample) 1973-04-23
IT964961B (it) 1974-01-31
NL7211381A (enExample) 1973-02-27
AU4566672A (en) 1974-02-21
DE2238664A1 (de) 1973-03-15

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Legal Events

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TP Transmission of property
ST Notification of lapse